2SA1160 - Transys Electronics - Datasheet.Directory

TO-92MOD Plastic-Encapsulated Transistors

2SA1160 TRANSISTOR (PNP)

FEATURE

Power dissipation

PCM : 0.9 W (Tamb=25℃)

Collector current

ICM: -2A

Collector-base voltage

V(BR)CBO: -20 V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150 ℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO Ic= -1mA , IE=0 -20 V

Collector-emitter br eakdown voltage V(BR)CEO I

C=-10mA , IB=0 -10 V

E mitter-base breakdown volt age V(BR)EBO I

E= -1mA, IC=0 -6 V

Collector cut-off current ICBO V

CB= - 20 V, IE=0 -0.1

µA

Emi tter cu t -o ff current IEBO V

EB= -6 V, IC=0 -0.1

µA

hFE(1) V

CE=-1V, IC= -0.5A 140 600

DC current gain hFE(2) V

CE=-1V, IC= -4A 60

Collector-emitter satur ation vol tage VCE(sat) I

C= -2A, IB=-50mA -0.2 -0.5 V

Transition fre quency fT VCE=- 1V, IC= -0.5 A 140 MHz

Output capacitance Cob VCE=-10V, IE=0,f=1 MHz 50 pF

CLASSIFICATION OF hFE

Rank A B C

Range 140-280 200-400 300-600

TO-92MOD

1. EMITTER

2. COLLECTOR

3. BASE

123

Transys

Electronics

ITE