FEATURES
Fast recov ery times
Ul 90V0 f lame ret arda nt epoxy molding compound
Diffused junction
Low c ost
H igh sur ge c ur r en t c apa bility
MECHANICAL DATA
Case: JE D EC DO-- 27, molded plast ic
T er minals: Axial lead , solderable per
M IL- STD-202,M ethod 208
Polarity : Color band denotes cathode
Weight : 0. 041 ounc es,1 .15 grams
Mounting position: A ny
Ratings at 25 ambient t emperat ur e unless ot herw ise specif ied.
S ingle phase,ha lf wave, 60 Hz, resist ive or induc tive load. F or c apac it ive load, der at e by 20%.
BYT
56B BYT
56D BYT
56G BYT
56J BYT
56K BYT
56M UNITS
Maximum recurrent peak reverse voltage VRRM 100 200 400 600 800 1000 V
Maximum RMS voltage VRMS 70 140 280 420 560 700 V
Maximum DC blocking voltage VDC 100 200 400 600 800 1000 V
Maximum average forward rectified current
9.5 mm l e a d l e n g th , @ TA=75
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load @ TJ=125
Maximum instantaneous forward voltage
@ 3 .0 A VFV
Ma ximum reverse current @TA=25
at rated D C blocking voltage @TA=100
Maximum reverse recovery time (Note1) trr ns
Typical junction capacitance (Note2) CJpF
Typi cal th e rmal resi stance (Note 3 ) RθJA ／Ｗ
O perating junction temperature range TJ
Storage temperature range TSTG
BYT56A(Z)--- BYT56M(Z)
A
B evel round ch ip, aualanch e operat ion
IF(AV)
HIG H EFFICIENCY ECTIFIER S VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 3 .0 A
DO - 27
MAXIMU M RATINGS AND ELECTRICAL CHARACTERISTICS
GALAXY ELECTRICAL
3. Ther m al resistance fr om junction to am bient.
A
IR
IFSM
N OTE: 1. Meas ur ed wi th IF=0.5A, IR=1A , Irr=0.25A.
2. Measured at 1.0MHZ and applied reverse voltage of 4.0V DC.
A
- 55 ---- + 150
- 55 ---- + 150
100
150.0
50
BYT
56A
35
50
3.0
1.4
30
150.0
10.0
75 50
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BL GALAXY ELECTRICAL
BL
Document Number 0262025 1.
AMPERES
AMPERES
RATINGS AND CHARACTERISTIC CURVES BYT56A(Z)--- BYT56M(Z)
AMBIENT TEMPERATURE( )
PEAKFORWARD SURGE CURRENT
AVERAGE FORWARD CURRENT. JUNCTION CAPACITANCE,pF
NUMBER OF CYCLES AT 60Hz REVERSE VOLTAGE,VOLTS
FIG.4 -- TYPICAL FORWARD CURRENT
DERATING CURVE FIG.5--TYPICAL FORWARD CHAR ACTERISTIC
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
INSTANTANEOUS FORWARD CURRENT
FIG.1 --TEST CIRCUIT DIAGRAM AND REVERSE R ECOVERY TIME CHA RA CTERISTIC
SET TIME BASE FOR 20/30 ns/cmNOTES:1.RISE TIME=7ns MAX.INPUT IMPEDANCE=1MΩ.22pF
2.RISE TIME=10ns MAX.source IMPEDANCE=50Ω.
FIG.2 -- TYPICAL JUN CTION C APA CTTA NCE FIG.3 --PEAK FORWARD SURGE CURRENT
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Document Number 026025 2.
BL GALAXY ELECTRICAL
10.1
1.4.2 1.0 2 4 20 40 100
BYT56J - BYT56M
200
10
100
TJ=25
70
50
BYT56A - BYT56G
0.4
0.01
0.1
0.61.61.2 1.4 1.8
1
10
100
TJ=25
Pulse Width=300 s
0
4
6
2
3
5
25 50 75 100 125 150 175
Sigle phase half
wave 60 Hz
Resistive or
Inductive load
0
150
200
100 1000110
TJ=25
8.3 ms Single half sine wave
50
100
(+)
PULSE
GENERATOR
(NOTE2)
(-)
D.U. T.
1
NONIN-
DUCTIVE
50
N1.
10
N1.
OSCI LLOSCOPE
(NOTE 1)
(+)
25VDC
(approx)
(-)
-1.0A
-0.25A
0
+0.5A
trr
1cm
