Small Surface-Mount Rectifiers S-FLAT TM and M-FLAT TM Series S-FL Today's mobile and office automation equipment is becoming ever smaller and slimmer. In response to this market trend, Toshiba have developed an ultra-small surface-mount S-Flat package rectifier which allows high-density mounting.Toshiba offer a slim, miniature S-FLAT package with a height of 0.98 mm (typ.) and a mounting area 50% smaller than that of existing TM TM S-FLAT Toshiba products.The M-FLAT package has been achieved the height of 0.98 mm (approximately the half of existing I-FLAT package) and high current capacity (up to 5 A). M-FLAT Type General - Purpose Applications SBDs General-Purpose SBD/HED Power Zener Diodes Rectification portable products Approx. 7.5 V: Voltage regulation Reverse connection protection Reverse-current protection Free-wheeling Secondary rectification 12 V~18 V: Gate protection for power MOSFETs DC-DC converter 24 V~47 V: Surge absorption Power zener diodes HEDs Lo iF - vF chara Features S-FLATTM Features Toshiba offer a slim, miniature S-FLAT package with a height of 0.98 mm (typ.) and a mounting area 50% smaller than an existing I-FLAT packag. iF(A) 10 1 M-FLATTM Features The M-FLAT package has been developed the I-FLAT as a base. By reducing the height to 0.98 mm (approximately the half of existing I-FLAT package) and optimizing the internal package frame, Toshiba have produced a device which offers high current capacity (up to 5 A) and lower power dissipation. 0.1 0 0. Common Features High surge current capability due to solder clamp structure. Flat pins allow stable mounting on the PCB SBD IR (actual d Package comparison (Toshiba products only) S-FLATTM (Unit: mm) M-FLATTM I-FLAT 100 Reverse Curlent IR(mA) 2.6 3.5 3.8 4.7 2.4 Conventional 1.9 0.98 2.4 1.6 New 0.98 10 4.3 4.7 1 0.1 0.01 0.001 0.0001 0 2 TM S-FLAT Line-up TM M-FLAT Type Prodect Number Ratings Features CRG01 0.7A/100V Small package CRG02 0.7A/400V CRS01 1A/30V Low - VF Type (VFM = 0.37 V@0.7 A,IRRM = 1.5 mA@30 V) CRS02 1A/30V Trench-SBD (VFM = 0.40 V@0.7 A,IRRM = 0.05 mA@30 V) CRS03 1A/30V Low - IR Type (VFM = 0.45 V@0.7 A,IRRM = 0.1 mA@30 V) CRS04 1A/40V 40 V withstand voltage SBD (VFM = 0.49 V@0.7 A,IRRM = 0.1 mA@40 V) CRS05 1A/30V Low - IR Type (VFM = 0.45 V@1 A,IRRM = 5A@5 V) CRS06 1A/20V Low - VF Type (VFM = 0.36 V@1 A,IRRM = 1 mA@20 V) General - Purpose SBDs ner Diodes ate protection for ower MOSFETs CRS07 1A/20V CRS08 1.5A/30V Low - VF Type (VFM = 0.36 V@1.5 A,IRRM = 1.0 mA@30 V) Low - IR Type (VFM = 0.46 V@1.5 A,IRRM = 0.05 mA@30 V) CRS09 1.5A/30V Power zener diodes CRZ ser 0.7W/7.5~47V HEDs CRH01 1A/200V Voltage regulation Small package Low - VF Type (VFM = 0.33 V@1 A,IRRM = 1 mA@20 V) High surge-protection capability High-speed, high-efficiency rectifiers (trr = 35 ns max VFM = 0.98 V@1.0 A) urge absorption Low - IR Type SBD iF - vF charactevistics (Tj = 25C) (max) Low - VF Type SBD iF - vF charactevistics (Tj = 25C) (max) 10 10 CRS03 CRS08 CRS09 CRS02 CRS02 CRS06 CRS01 iF(A) % smaller than an iF(A) CRS04 1 1 proximately the evice which offers 0.1 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 0.2 0.4 0.6 vF(V) 0.8 1 1.2 1.4 vF(V) SBD IR - Tj@VR = 5 V (Tj = 25C) (actual data for reference only) SBD IR - Tj@VR = 10 V (Tj = 25C) (actual data for reference only) 100 100 10 10 1 0.1 0.01 CRS01 CRS02 CRS03 CRS06 CRS08 CRS09 0.001 0.0001 0 20 40 60 80 100 Junction Temperature Tj(C) 120 Reverse Curlent IR(mA) Reverse Curlent IR(mA) (Unit: mm) 1 0.1 0.01 CRS01 CRS02 CRS03 CRS06 CRS08 CRS09 0.001 0.0001 0 20 40 60 80 100 120 Junction Temperature Tj(C) 3 TM M-FLAT Product Number Line-up Type Prodect Number Ratings CMS01 3A/30V Low - VF SBD SBDs CMS01 CMS02 CMS03 CMS04 CMS05 CMS06 CMS07 CMS08 CMS09 CMS10 CMS11 Features VFM = 0.37 V@3 A,IRRM = 5 mA@30 V CMS02 3A/30V Trench SBD VFM = 0.40 V@3 A,IRRM = 0.5 mA@30 V CMS03 3A/30V Low - IR SBD VFM = 0.45 V@3 A,IRRM = 0.5 mA@30 V CMS04 5A/30V Low - VF SBD VFM = 0.37 V@5 A,IRRM = 8 mA@30 V CMS05 5A/30V Low - IR SBD VFM = 0.45 V@5 A,IRRM = 0.8 mA@30 V CMS06 2A/30V Low - VF SBD VFM = 0.37 V@2 A,IRRM = 3 mA@30 V CMS07 2A/30V Low - IR SBD VFM = 0.45 V@2 A,IRRM = 0.5 mA@30 V CMS08 1A/30V Low - VF SBD VFM = 0.37 V@1 A,IRRM = 1.5 mA@30 V CMS09 1A/30V Low - IR SBD VFM = 0.45 V@1 A,IRRM = 0.5 mA@30 V CMS10 1A/40V Normal SBD VFM = 0.55 V@1 A,IRRM = 0.5 mA@40 V CMS11 2A/40V Normal SBD VFM = 0.55 V@2 A,IRRM = 0.5 mA@40 V S Type CMS01/CMS02/CMS03 iF - vF Charactevistics (Tj = 25C) (max) CMS06/CMS07/CMS08/CMS09 iF - vF Charactevistics (Tj = 25C) (max) SBDs 10 10 CMS01 (3 A low - VF) CMS06 iF(A) iF(A) (2 A low - VF) 1 HEDs CMS08 CMS09 (1 A low - VF) 1 IF Generalpurpose recfifiers (1 A low - IR) CMS02 Product Number CRS01 CRS02 CRS03 CRS04 CRS05 CRS06 CRS07 CRS08 CRS09 CRH01 CRG01 CRG02 CMS07 (3 A trench) (2 A low - IR) CMS03 S-F (3 A low - IR) 0.1 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.1 0.2 vF(V) 10 10 1 0.1 CMS01 (3 A low - VF) CMS03 (3 A low - IR) CMS06 (2 A low - VF) CMS07 (2 A low - IR) CMS08 (1 A low - VF) Reverse Curlent IR(mA) Reverse Curlent IR(mA) 100 0.6 0.7 0.8 Product Number 1 0.1 CMS01 (3 A low - VF) 0.01 CMS03 (3 A low - IR) CMS06 (2 A low - VF) CMS07 (2 A low - IR) 0.001 CMS08 (1 A low - VF) CMS09 (1 A low - IR) CMS09 (1 A low - IR) CMS10 (1 A - 40 V) CMS10 (1 A - 40 V) 0.0001 0.0001 20 40 60 Junction Temperature Tj(C) 4 0.5 SBD IR - Tj@VR = 15 V (Tj = 25C) (actual data for reference only) 100 0.001 0.4 vF(V) SBD IR - Tj@VR = 5 V (Tj = 25C) (actual data for reference only) 0.01 0.3 80 100 20 40 60 Junction Temperature Tj(C) 80 100 CRY7.5 CRY8.2 CRY9.1 CRZ10 CRZ11 CRZ12 CRZ13 CRZ15 CRZ16 CRZ18 CRZ20 CRZ22 CRZ24 CRZ27 CRZ30 CRZ33 CRZ36 CRZ39 CRZ43 CRZ47 m 6 7 8 9 1 1 1 1 1 1 2 2 2 3 3 3 4 M-FLATTM Electrical Characteristics of SBDs Product Number CMS01 CMS02 CMS03 CMS04 CMS05 CMS06 CMS07 CMS08 CMS09 CMS10 CMS11 IF(AV) (A) 3 3 3 5 5 2 2 1 1 1 2 VRRM (V) 30 30 30 30 30 30 30 30 30 40 40 Maximum Ratings IFSM (A) 40 40 40 60 60 40 40 25 25 25 40 Tj (C) -40~125 -40~125 -40~150 -40~125 -40~150 -40~125 -40~150 -40~125 -40~150 -40~150 -40~150 Tstg (C) -40~150 -40~150 -40~150 -40~150 -40~150 -40~150 -40~150 -40~150 -40~150 -40~150 -40~150 VFM (V) 0.37 0.4 0.45 0.37 0.45 0.37 0.45 0.37 0.45 0.55 0.55 Electrical Characteristics IRRM IFM(A) (mA) 5 3 0.5 3 0.5 3 8 5 0.8 5 3 2 0.5 2 1.5 1 0.5 1 1 0.5 2 0.5 VRRM(V) 30 30 30 30 30 30 30 30 30 40 40 S-FLATTM Electrical Characteristics of Rectifiers Type /CMS09 = 25C) (max) SBDs HEDs CMS09 Generalpurpose recfifiers 1 A low - IR) Product Number CRS01 CRS02 CRS03 CRS04 CRS05 CRS06 CRS07 CRS08 CRS09 CRH01 CRG01 CRG02 IF(AV) (A) 1 1 1 1 1 1 1 1.5 1.5 1 0.7 0.7 Maximum Ratings VRRM IFSM Tj (V) (A) (C) -40~125 20 30 -40~125 20 30 -40~150 20 30 -40~150 20 40 -40~150 20 30 -40~125 20 20 -40~125 30 20 -40~125 30 30 -40~150 30 30 -40~150 15 200 -40~150 15 100 -40~150 15 400 Tstg (C) -40~125 -40~125 -40~150 -40~150 -40~150 -40~125 -40~150 -40~150 -40~150 -40~150 -40~150 -40~150 VFM (V) 0.37 0.4 0.45 0.49 0.45 0.36 0.33 0.36 0.46 0.98 1.1 1.1 Electrical Characteristics IRRM IFM(A) (mA) VRRM(V) 30 1.5 0.7 30 0.05 0.7 30 0.1 0.7 40 0.1 0.7 5 0.005 1 20 1 1 20 1 1 30 1 1.5 30 0.05 1.5 200 0.01 1 100 0.01 0.7 400 0.01 0.7 trr (ns) 35 - R) TM S-FLAT Electrical Charactevistics of Zener Diodes 0.6 0.7 0.8 Product Number Tj = 25C) ce only) CMS01 (3 A low - VF) CMS03 (3 A low - IR) CMS06 (2 A low - VF) CMS07 (2 A low - IR) CMS08 (1 A low - VF) CMS09 (1 A low - IR) CMS10 (1 A - 40 V) 80 100 CRY7.5 CRY8.2 CRY9.1 CRZ10 CRZ11 CRZ12 CRZ13 CRZ15 CRZ16 CRZ18 CRZ20 CRZ22 CRZ24 CRZ27 CRZ30 CRZ33 CRZ36 CRZ39 CRZ43 CRZ47 min 6.75 7.38 8.19 9 9.9 10.8 11.7 13.5 14.4 16.2 18 19.8 21.6 24.3 27 29.7 32.4 35.1 38.7 42.3 Zener Voltage VZ (V) typ. 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 max 8.25 9.02 10.01 11 12.1 13.2 14.3 16.5 17.6 19.8 22 24.2 26.4 29.7 33 36.3 39.6 42.9 47.3 51.7 measuring current IZ (mA) 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 9 8 7 6 Forward Voltage VF measuring current (V) IF (A) max 1.0 0.2 1.0 0.2 1.0 0.2 1.0 0.2 1.0 0.2 1.0 0.2 1.0 0.2 1.0 0.2 1.0 0.2 1.0 0.2 1.0 0.2 1.0 0.2 1.0 0.2 1.0 0.2 1.0 0.2 1.0 0.2 1.0 0.2 1.0 0.2 1.0 0.2 1.0 0.2 Reverse Current IR measuring current (A) VR (V) max 10 4.5 10 4.9 10 5.5 10 6 10 7 10 8 10 9 10 10 10 11 10 13 10 14 10 16 10 17 10 19 10 21 10 26.4 28.8 10 31.2 10 34.4 10 37.6 10 5 Package Dimensions M-FLATTM Unit: mm 0.65 0.2 1.4 J I 4.7 0.2 3.8 0.1 Soldering pad dimensions (reference only) 2.8 0.16 1.75 0.1 0.98 0.1 1.4 3.0 1.4 M M N 1 2.4 +0.2 -0.1 N 0~0.1 1: Anode 2: Cathode 0.98 0.1 1 0~0.1 0.65 0.2 1.2 0.9 0.1 1.6 +0.2 -0.1 Unit: mm 1.2 0.65 0.2 0.16 Tape dimension 2 Soldering pad dimensions (reference only) 3.5 0.2 2.6 0.1 0.65 0.2 2 G S-FLATTM M Tepe 1: Anode 2: Cathode Item TM S-FLAT Embossed Tape Packing(TE85R,TE85L) Tape dimensions Device Recess Unit: mm Reel dimensions F Feed Hole 9.0 0.3 E K H o180 3 o180 3 o3 N B M M A 3 0.2 L L type *1 *2 *3 N Tepe feed direction *3 o3 Carrier Tape o10 2 0.2 4 0.5 o44 1.2 0.5 1.2 0.5 Position of label Leader and traile Unit: mm Item Device Recess Feed Hole Center - line Gap Carrier Tape Length Width Diameter Pitch Diameter Pitch Lateral position Lengthwise direction Crosswise direction Width Thickness Depth Angle Curvature Symbol A B C D E F G H I J K L M N Dimension 1.9 0.1 3.8 0.1 o1.1 0.1 4.0 0.1 o1.5 +0.1 -0 4.0 0.1 1.75 0.1 2.0 0.1 3.5 0.1 8.0 0.3 0.2 0.05 1.25 0.1 5max R0.3 max Remarks Inside bottom surface Inside bottom surface Internal space -- -- Cumulative pitch error rate: 0.2 mm max / 10 pitches Distance between tape edge and center of the recess Distance between recess center and feed hole center Distance between recess center and feed hole center -- -- -- -- -- Leader and trailer dimensions Leading empty length: 200 mm(min) Leader: 400 mm(min) Trailing empty length more than 10 pitches 6 L C R type C N 13 0.2 M 18min *2 o76 D Center - line Gap 85 *1 N J I M 5 0.2 o60 1 G 110 o160 4 0.2 TM M-FLAT Embossed Tape Packing(TE12R,TE12L) Tape dimensions Unit: mm Reel dimensions F Unit: mm 13 0.3 E K H o180 3 o180 3 o3 N N *1 B 13 0.2 18min M 1.4 85 5 0.2 M J o160 4 0.2 *2 o76 3.0 1.4 M D M A 3 0.2 L *3 o3 o10 R type C N o60 1 G 110 I pad dimensions only) L type *1 *2 *3 N Tepe feed direction 2 0.2 4 0.5 o44 1.2 0.5 1.2 0.5 Position of label Unit: mm Item L) Device Recess Unit: mm Feed Hole 03 o3 85 Center - line Gap *3 Carrier Tape o10 Length Width Diameter Pitch Diameter Pitch Lateral position Lengthwise direction Crosswise direction Width Thickness Depth Angle Curvature Symbol A B C D E F G H I J K L M N Dimension 2.7 0.1 5.0 0.1 o1.5 0.1 4.0 0.1 o1.5 + 0.1 4.0 0.1 1.75 0.1 2.0 0.05 5.5 0.05 12.0 0.3 0.3 0.05 1.25 0.1 2max R0.2 max Remarks Inside bottom surface Inside bottom surface Internal space -- -- Cumulative pitch error rate: 0.2 mm max / 10 pitches Distance between tape edge and center of the recess Distance between recess center and feed hole center Distance between recess center and feed hole center -- -- -- -- -- Position of label Leader and trailer dimensions Unit: mm Leading empty length: 180 mm(min) Trailing empty length: 180 mm(min) Leader: 400 mm(min) 10 pitches he recess ole center ole center 7 OVERSEAS SUBSIDIARIES AND AFFILIATES Toshiba America Electronic Components, Inc. 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Level 11, Top Glory Insurance Building, Grand Century Place, No.193, Prince Edward Road West, Mong Kok, Kowloon, Hong Kong Tel: 2375-6111 Fax: 2375-0969 Beijing Office Rm 714, Beijing Fortune Building, No.5 Dong San Huan Bei-Lu, Chao Yang District, Beijing, 100004, China Tel: (010)6590-8795 Fax: (010)6590-8791 Chengdu Office Unit F, 18th Floor, New Times Plaza, 42 Wenwu Road, Xinhua Avenue, Chengdu, 610017, China Tel: (028)675-1773 Fax: (028)675-1065 Shenzhen Office Rm 3010-3012, Office Tower Shun Hing Square, Di Wang Commercial Centre, 333 ShenNan East Road, Shenzhen, 518008, China Tel: (0755)246-1582 Fax: (0755)246-1581 Toshiba Electronics Korea Corporation Seoul Head Office 14/F, KEC B/D, 257-7 Yangjae-Dong, Seocho-ku, Seoul, Korea Tel: (02)589-4334 Fax: (02)589-4302 Gumi Office 6/F, Ssangyong Investment Securities B/D, 56 Songjung-Dong, Gumi City Kyeongbuk, Korea Tel: (82)54-456-7613 Fax: (82)54-456-7617 Toshiba Technology Development (Shanghai) Co., Ltd. 23F, Shanghai Senmao International Building, 101 Yin Cheng East Road, Pudong New Area, Shanghai, 200120, China Tel: (021)6841-0666 Fax: (021)6841-5002 Tsurong Xiamen Xiangyu Trading Co., Ltd. 8N, Xiamen SEZ Bonded Goods Market Building, Xiamen, Fujian, 361006, China Tel: (0592)562-3798 Fax: (0592)562-3799 Toshiba Electronics Taiwan Corporation Taipei Head Office 17F, Union Enterprise Plaza Bldg. 109 Min Sheng East Rd., Section 3, 0446 Taipei, Taiwan Tel: (02)514-9988 Fax: (02)514-7892 Kaohsiung Office 16F-A, Chung-Cheng Bldg., Chung-Cheng 3Rd., 80027, Kaohsiung, Taiwan Tel: (07)222-0826 Fax: (07)223-0046 26th Floor, Citibank Tower, Valero Street, Makati, Manila, Philippines Tel: (02)750-5510 Fax: (02)750-5511 The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. The Toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These Toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of Toshiba products listed in this document shall be made at the customer's own risk. Website: http://doc.semicon.toshiba.co.jp/indexus.htm Electronic Devices Sales & Marketing Group 1-1, Shibaura 1-chome, Minato-ku, Tokyo, 105-8001, Japan Tel: (03)3457-3405 Fax: (03)5444-9431 (c)2000 TOSHIBA CORPORATION Printed in Japan