© Semiconductor Components Industries, LLC, 2012
August, 2012 Rev. 2
1Publication Order Number:
2N2905A/D
2N2905A
Small Signal Switching
Transistor
PNP Silicon
Features
MILPRF19500/290 Qualified
Available as JAN, JANTX, and JANTXV
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage VCEO 60 Vdc
CollectorBase Voltage VCBO 60 Vdc
EmitterBase Voltage VEBO 5.0 Vdc
Collector Current Continuous IC600 mAdc
Total Device Dissipation @ TA = 25°C PT800 mW
Total Device Dissipation @ TC = 25°C PT3.0 W
Operating and Storage Junction
Temperature Range
TJ, Tstg 65 to +200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, JunctiontoAmbient RqJA 195 °C/W
Thermal Resistance, JunctiontoCase RqJC 50 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
COLLECTOR
3
2
BASE
1
EMITTER
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TO39
CASE 205AB
STYLE 1
Device Package Shipping
ORDERING INFORMATION
JAN2N2905A
JANTX2N2905A TO39 Bulk
JANTXV2N2905A
2N2905A
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 1)
(IC = 10 mAdc)
V(BR)CEO 60
Vdc
CollectorEmitter Cutoff Current
(VCE = 60 Vdc)
ICES 1.0
mAdc
CollectorBase Cutoff Current
(VCB = 50 Vdc)
(VCB = 60 Vdc)
ICBO
10
10
nAdc
mAdc
EmitterBase Cutoff Current
(VEB = 5.0 Vdc)
(VEB = 3.5 Vdc)
IEBO
10
50
mAdc
nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 150 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
hFE 75
100
100
100
50
450
300
CollectorEmitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
0.4
1.6
Vdc
BaseEmitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
1.3
2.6
Vdc
SMALLSIGNAL CHARACTERISTICS
Magnitude of Small Signal Current Gain
(IC = 50 mAdc, VCE = 20 Vdc, f = 100 MHz)
|hfe|
2.0
Small Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1 kHz)
hfe 100
Output Capacitance (VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz) Cobo 8.0 pF
Input Capacitance (VEB = 2.0 Vdc, IC = 0, 100 kHz f 1.0 MHz) Cibo 30 pF
SWITCHING CHARACTERISTICS
TurnOn Time
(Reference Figure in MILPRF19500/290)
ton 45 ns
TurnOff Time
(Reference Figure in MILPRF19500/290)
toff 300 ns
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
2N2905A
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3
PACKAGE DIMENSIONS
TO39 3Lead
CASE 205AB
ISSUE A
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
SEATING
PLANE
RF
B
C
K
L
P
D
3X
M
H
J
S
B0.007 (0.18MM) C M
A
N
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A0.350 0.3708.89 9.40
B0.315 0.3358.00 8.51
C0.240 0.2606.10 6.60
D0.016 0.0190.41 0.48
E0.009 0.1250.23 3.18
F0.016 0.0190.41 0.48
N0.200 BSC5.08 BSC
H0.028 0.0340.71 0.86
J0.029 0.0400.73 1.02
K0.500 0.58012.70 14.73
L0.250 ---6.35 ---
M45 BSC45 BSC
R0.054 BSC1.37 BSC
P--- 0.050--- 1.27
__
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE.
4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE
PLANE DEFINED BY DIMENSION R.
5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L.
6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K.
7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN
SIONS A, B, AND T.
8. DIMENSION B SHALL NOT VARY MORE THAN 0.010 IN ZONE P.
T--- 0.030--- 0.76
U0.100 ---2.54 ---
A
B
A
DETAIL X
U
NOTE 5
NOTES 4 & 6
C
U
E
2
31
DETAIL X
NOTE 7
T
LEAD IDENTIFICATION
DETAIL
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2N2905A/D
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