SB05-05C
No. A0409-1/3
Applications
High frequency rectification (switching regulators, converters, choppers).
Features
Low forward voltage (VF max=0.55V).
Fast reverse recorvery time (trr max=10ns).
Low switching noise.
Low leakage current and high reliability due to highly reliable planar structure.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Repetitive Peak Reverse Voltage VRRM 50 V
Nonrepetitive Peak Reverse Surge Voltage VRSM 55 V
Average Output Current IO500 mA
Surge Forward Current IFSM 50Hz sine wave, 1 cycle 5 A
Junction Temperature Tj --55 to +125 °C
Storage Temperature Tstg --55 to +125 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Reverse Voltage VRIR=200µA, Tj=25°C50V
Forward Voltage VFIF=500mA, Tj=25°C 0.55 V
Reverse Current IRVR=25V, Tj=25°C50µA
Interterminal Capacitance C VR=10V, f=1MHz 17 pF
Reverse Recovery Time trr
IF=IR=100mA, Tj=25°C, See specified Test Circuit.
10 ns
Rthj-a(1) 420 °C / W
Thermal Resistance Rthj-a(2) Mounted in Cu-foiled area of 16mm20.2mm 330 °C / W
on glass epoxy board
Marking : B
Ordering number : ENA0409
71206 / 42506SB MS IM TB-00000745
SB05-05C Schottky Barrier Diode
50V, 500mA Rectifier
SANYO Semiconductors
DATA SHEET
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SB05-05C
No. A0409-2/3
Package Dimensions trr Test Circuit
unit : mm
7013A-004
1 : Anode
2 : No Contact
3 : Cathode
SANYO : CP
12
3
1.5
2.5
1.1
0.3
0.05
2.9
0.95 0.4
0.1
0.5
0.5
0 0.6 0.8 1.00.2 0.4
1.0
0.1
0.01
7
5
2
3
7
5
2
3
1.2
Ta=125°C
25°C
ID00339 0
1000
100
2
5
2
5
2
10
5
1.0
5
2
0.1
5
2
2
60 7010 20 30 40 50
Ta=125°C
25°C
50°C
75°C
100
°
C
ID00340
1.0 23 7
10
5237
100
5
ID00342
f=1MHz
ID00341
5
2
3
0
0100
500
600
400
300
200
100
200 300 400 600500
5
10
3
7
7
5
3
2
100
(1)
(4)
(2)
(3)
IF -- VFIR -- VR
PF(AV) -- IO
Forward Voltage, VF -- V
Forward Current, IF -- A
Reverse Voltage, VR -- V
Reverse Current, IR -- µA
Average Output Current, IO -- A
Average Forward Power Dissipation, PF(AV) -- mW
Reverse Voltage, VR -- V
Interterminal Capacitance, C -- pF
180°
360°
θ
360°
Rectangular
wave
Sine wave
C -- VR
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
Duty10%
5010010
5V trr
10µs
100mA
100mA
10mA
SB05-05C
No. A0409-3/3
ID00343
70.01 23 7
0.1
05237
1.0
523
6
7
4
2
5
3
1
IFSM -- t
IS
20ms
t
Time, t -- s
Surge Forward Current, IFSM(Peak) -- A
Current waveform 50Hz sine wave
PS
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
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SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
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This catalog provides information as of April, 2006. Specifications and information herein are subject
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