CPDUR5V0U-HF
SMD ESD Protection Diode
Page 1
QW-G7055
REV:C
Comchip Technology CO., LTD.
RoHS Device
Halogen Free
0.071(1.80)
0.063(1.60)
0.039(1.00)
0.031(0.80)
0.033(0.85)
0.027(0.70)
Dimensions in inches and (millimeter)
0.030(0.75)
0.020(0.50)
0603/SOD-523F
0.016(0.40)
0.026(0.65)
Company reserves the right to improve product design , functions and reliability without notice.
Mechanical data
- Case: 0603/SOD-523F standard package ,
molded plastic.
- Terminals: Gold plated, solderable per
MIL-STD-750, method 2026.
- Mounting position: Any.
- Weight: 0.003 grams(approx.).
Circuit Diagram
Features
- Uni-directional ESD protection.
- Surface mount package.
- High component density.
- IEC 61000-4-2 (ESD) ; ±30KV(contact)
- Working voltage:5V
Symbol Typ
Parameter Min
Max
Unit
Conditions
Breakdown voltage VBR V
IT = 1mA
6
Reverse leakage current IRµA
VRWM = 5V 2.0
Clamping voltage
V
Working peak reverse voltage VRWM
5.0
Junction capacitance CJpF
VR = 0V, f = 1MHz
Electrical Characteristics (at TA=25°C unless otherwise noted)
Forward voltage VFV
IF = 10mA
1.2
Maximum Rating (at TA=25°C unless otherwise noted)
Symbol
Parameter Value Unit
Conditions
Peak pulse power PPP W
180
Operation temperature range Tj°C
Storage temperature range TSTG -55~+150 °C
ESD
kV
IEC 61000-4-2(air)
IEC 61000-4-2(contact)
ESD capability
-40~+125
Peak pulse current IPP A
TP = 8/20us 15
TP = 8/20us
±30
ESD ±30
130
0.8
0.2
VCV
7.6
IPP = 1A, TP = 8/20us
IPP = 5A, TP = 8/20us 9.4
IPP = 15A, TP = 8/20us 12
8
10