050-7601 Rev C 10-2005
APT35GN120B(G)TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 250µA)
Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 35A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 35A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Intergrated Gate Resistor
Symbol
V(BR)CES
VGE(TH)
VCE(ON)
ICES
IGES
RGINT
Units
Volts
µA
nA
Ω
Symbol
VCES
VGE
IC1
IC2
ICM
SSOA
PD
TJ,TSTG
TL
APT35GN120B(G)
1200
±30
94
46
105
105A @ 1200V
379
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1 @ TC = 150°C
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s
have a very short, low amplitude tail current and low Eoff. The Trench Gate design
results in superior VCE(on) performance. Easy paralleling results from very tight
parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in
gate resistance ensures ultra-reliable operation. Low gate charge simplifies gate drive
design and minimizes losses.
• 1200V NPT Field Stop
• Trench Gate: Low VCE(on)
• Easy Paralleling
• 10µs Short Circuit Capability
• Intergrated Gate Resistor: Low EMI, High Reliability
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MIN TYP MAX
1200
5 5.8 6.5
1.4 1.7 2.1
1.9
100
TBD
600
6
1200V
APT35GN120B
APT35GN120BG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
®
G
C
E
TO-247
GCE
050-7601 Rev C 10-2005
APT35GN120B(G)
DYNAMIC CHARACTERISTICS
Symbol
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
SSOA
SCSOA
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
Test Conditions
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCE = 600V
IC = 35A
TJ = 150°C, RG = 2.2Ω 7, VGE =
15V, L = 100µH,VCE = 1200V
VCC = 960V, VGE = 15V,
TJ = 125°C, RG = 2.2Ω 7
Inductive Switching (25°C)
VCC = 800V
VGE = 15V
IC = 35A
RG = 2.2Ω 7
TJ = +25°C
Inductive Switching (125°C)
VCC = 800V
VGE = 15V
IC = 35A
RG = 2.2Ω 7
TJ = +125°C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Switching Safe Operating Area
Short Circuit Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4 4
Turn-on Switching Energy (Diode) 55
Turn-off Switching Energy 66
MIN TYP MAX
2500
150
120
9.5
220
15
130
105
10
24
22
300
55
TBD
2395
2315
24
22
365
100
TBD
3745
3435
UNIT
pF
V
nC
A
µs
ns
µJ
ns
µJ
UNIT
°C/W
gm
MIN TYP MAX
.33
N/A
5.9
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
Symbol
RθJC
RθJC
WT
THERMAL AND MECHANICAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 RG is external gate resistance, not including RGint nor gate driver impedance. (MIC4452)
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7601 Rev C 10-2005
APT35GN120B(G)TYPICAL PERFORMANCE CURVES
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
VOLTAGE (NORMALIZED)
IC, DC COLLECTOR CURRENT(A) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VGE, GATE-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)
IC = 35A
TJ = 25°C
250µs PULSE
TEST<0.5 % DUTY
CYCLE
120
100
80
60
40
20
0
100
80
60
40
20
0
4
3.5
3
2.5
2
1.5
1.0
0.5
0
1.10
1.05
1.00
0.95
0.90
120
100
80
60
40
20
0
16
14
12
10
8
6
4
2
0
3
2.5
2
1.5
1
0.5
0
140
120
100
80
60
40
20
0
VCE = 600V
VCE = 240V
VCE = 960V
VCE, COLLECTER-TO-EMITTER VOLTAGE (V) VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25°C) FIGURE 2, Output Characteristics (TJ = 125°C)
VGE, GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics FIGURE 4, Gate Charge
VGE, GATE-TO-EMITTER VOLTAGE (V) TJ, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage FIGURE 6, On State Voltage vs Junction Temperature
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature FIGURE 8, DC Collector Current vs Case Temperature
15V
11V
9V
8V
12V
10V
7V
15V
11V
10V
9V
12V
8V
7V
TJ = 125°C
TJ = 25°C
TJ = -55°C
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
IC = 70A
IC = 35A
IC = 17.5A
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
IC = 70A
IC = 35A
IC = 17.5A
0 2 4 6 8 10 12 0 2 4 6 8 10 12 14
0 2 4 6 8 10 12 14 0 50 100 150 200 250
8 10 12 14 16 -50 -25 0 25 50 75 100 125
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150
Lead Temperature
Limited
Lead Temperature
Limited
050-7601 Rev C 10-2005
APT35GN120B(G)
VGE =15V,TJ=125°C
VGE =15V,TJ=25°C
VCE = 800V
RG = 2.2Ω
L = 100 µH
SWITCHING ENERGY LOSSES (µJ) EON2, TURN ON ENERGY LOSS (µJ) tr, RISE TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
SWITCHING ENERGY LOSSES (µJ) EOFF, TURN OFF ENERGY LOSS (µJ) tf, FALL TIME (ns) td (OFF), TURN-OFF DELAY TIME (ns)
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current FIGURE 10, Turn-Off Delay Time vs Collector Current
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current FIGURE 12, Current Fall Time vs Collector Current
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current FIGURE 14, Turn Off Energy Loss vs Collector Current
RG, GATE RESISTANCE (OHMS) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance FIGURE 16, Switching Energy Losses vs Junction Temperature
VCE = 800V
VGE = +15V
RG = 2.2Ω
RG = 2.2Ω, L = 100µH, VCE = 800V
VCE = 800V
TJ = 25°C, TJ =125°C
RG = 2.2Ω
L = 100 µH
30
25
20
15
10
5
0
80
70
60
50
40
30
20
10
0
12000
10000
8000
6000
4000
2000
0
25000
20000
15000
10000
5000
0
VGE = 15V
TJ = 25°C, VGE = 15V
VCE = 800V
VGE = +15V
RG = 2.2Ω
VCE = 800V
VGE = +15V
RG = 2.2Ω
Eon2,70A
Eoff,70A
Eoff,35A
Eon2,35A
Eon2,17.5A
Eoff,17.5A
Eon2,70A
Eoff,70A
Eon2,35A
Eoff,35A
Eon2,17.5A Eoff,17.5A
VCE = 800V
VGE = +15V
TJ = 125°C
RG = 2.2Ω, L = 100µH, VCE = 800V
450
350
300
250
200
150
100
50
0
150
125
100
75
50
25
0
8000
7000
6000
5000
4000
3000
2000
1000
0
12000
10000
8000
6000
4000
2000
0
TJ = 125°C, VGE = 15V
TJ = 25°C, VGE = 15V
TJ = 25°C,VGE =15V
TJ = 125°C,VGE =15V
TJ = 125°C, VGE = 15V
TJ = 25 or 125°C,VGE = 15V
10 20 30 40 50 60 70 80 10 20 30 40 50 60 70 80
10 20 30 40 50 60 70 80 10 20 30 40 50 60 70 80
10 20 30 40 50 60 70 80 10 20 30 40 50 60 70 80
0 10 20 30 40 50 0 25 50 75 100 125
050-7601 Rev C 10-2005
APT35GN120B(G)TYPICAL PERFORMANCE CURVES
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
ZθJC, THERMAL IMPEDANCE (°C/W)
0.3
0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10-5 10-4 10-3 10-2 10-1 1.0
4,000
1,000
500
100
50
10
120
100
80
60
40
20
0
C, CAPACITANCE (PF)
IC, COLLECTOR CURRENT (A)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage Figure 18,Minimim Switching Safe Operating Area
0 10 20 30 40 50 0 200 400 600 800 1000 1200 1400
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
10 20 30 40 50 60 70
FMAX, OPERATING FREQUENCY (kHz)
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
140
10
1
C0es
Cres
0.5
0.1
0.05
Fmax = min (fmax, fmax2)
0.05
fmax1 =
td(on) + tr + td(off) + tf
Pdiss - Pcond
Eon2 + Eoff
fmax2 =
Pdiss = TJ - TC
RθJC
Cies
TJ = 125°C
TC = 75°C
D = 50 %
VCE = 800V
RG = 2.2Ω
Peak TJ = PDM x ZθJC + TC
Duty Factor D = t1/t2
t2
t1
PDM
Note:
0.163
0.168
0.00661F
0.181F
Power
(watts)
RC MODEL
Junction
temp. (°C)
Case temperature. (°C)
050-7601 Rev C 10-2005
APT35GN120B(G)
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 23, Turn-off Switching Waveforms and Definitions
TJ = 125°C
Collector Current
CollectorVoltage
Gate Voltage
Switching Energy
5%
10%
td(on)
90%
10%
tr
5%
TJ = 125°C
CollectorVoltage
Collector Current
Gate Voltage
Switching Energy
0
90%
td(off)
10%
tf
90%
*DRIVER SAME TYPE AS D.U.T.
I
C
V
CLAMP
100uH
V
TEST
A
A
B
D.U.T.
DRIVER*
V
CE
Figure 24, EON1 Test Circuit
I
C
A
D.U.T.
V
CE
Figure 21, Inductive Switching Test Circuit
V
CC
APT40DQ120
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Collector
Collector
Emitter
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
