2N3839 I The RF NPN SILICON RF SMALL-SIGNAL . . . designed lator, primarily and mixer for use in high-gain, applications. I Line TRANSISTORS low-noise amplifier, Can also be used in UHF oscil- converter applications. 0.050 Total Device Dissipation @ TA = 25C pD Derate above 25C 200 mW 1.14 mW/C - 4 0.100 0,100 tin 1. Emitter 2. Base _20, t 3. Collector 0.050 Total Device Dissipation @ TC = 25C pD Derate above 250C 300 mW 1.72 mW/C 1 0.045v Storage Temperature Range Tstg -65 to +200 Oc 03 4. Case 04 wi 45, \ / Og 0,048 CASE 20 (10) TO-72 Active Elements PACKAGE Isolated from Case *ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise Characteristic noted) Symbol Min Typ BVCEO 15 -- -- BVc60 30 -- -- BVEBO 2.5 -- Both Types -- -- 2N3839 -- 1.0 30 150 -- MHz I Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown (lC=3.0mAdc, Collector-Base (It= Breakdown l. O#Adc, Emitter-Base (l E=l Collector Voltage** iB `O) Voltage ~$*:r ..*), ,4..,' .1,:, , ,.,:*&.~$~ ~,,..l~ $1 #"~\t \:t;!$" Vdc ~.!,.jj.,.,t ,{., .,>.,. !.!, ,...... . . . . ,,. <+:;: , $.~:,:~. pAdc !:~:~l \,, ./+ IE = O) Breakdown OpAdc, lC=O) Cutoff Current (vCB=15vdc, Voltage [CBO lE=o) (VCB = 15 Vdc, IE = O, TA = 1500C) Vdc `~,. ~.,'\\,. ,\y;&i* ~.,,i,~.. ..,+$.\, . *il.,%`+4. > ON CHARACTERISTICS DC Current Gain hFE (Ic = 3.0 mAdc, DYNAMIC VCE = 1.0 Vdc) ,"., .. ,.~.'$t .4. *$.,,,,, , :+* ,p . ...*. CHARACTERISTICS Current-Gain-Bandwidth (lc= 5. OmAdc, Collector-Base (VCB= Product @ VCE =6. OVdc, 2N3B39 Capacitance tol.O lovdC,lE=o,f=o.l Small-Signal 2N2857 f = 100 MHz) Current (Ic = 2.0 mAdc, Collector-Base MHz) Gain VCE = 6.0 Vdc, f = 1.0 kHz) fT .$7%:. d> *~30*@. ~:.~,,:$> -- Ccb ,l.* `\~.~~. ~r'<,.: ,,$,.. 50 .t*~&k `:: ..! ,!,$ ,h \ "JJ~,, -$.?%+ ~;F Time Constant 2N28~~~ ?:%'CC "<$ 2N38j9 .. , Noise Figure (Figure 1 ) NF .:$; Both (I ~ = O. I mAdc, VCE = !.0 Vdc, RS = 50 ohms, f = 450 M~~+@$i~YPes (IE = 2.O mAdc, (lc= VCB = 6.0 Vdc, f = 31.9 MHz) 1.5 mAdc, VCE = 6.0 Vdc, RS = 500hms, FUNCTIONAL TEST Common-Emitter Amplifier MOTOROLA pF -- 220 -- ps -- 15 1.0 -- 15 -- 5.8 -- -- 4.1 4.5 3,9 dB GPe Pout Semiconductor 1.0 4.0 -- (Ic = 1.5 mAdc, VCE = 6.0 Vdc, f `,4$~M~) -' .?:' ` .$\ ~-\,\\ (Figure 2) .,., (1E = 12 mAdc, VCB = 10 V,@;i$$*"~ MHz) `:!+> .>, ., .: 0.7 -- f = 45$,&Jg~ Power Output 1900 2000 dB f `45}*~?YN2857 ,Y .$$." :b. 2N3B39 ~ **.$. ,.$ .)..!:, .>t>,,"<`*' , ,{*:!. >...$~$$~$ \\x.> Power Gain (Fig@~,~~~ (IE = 0.1 mAdc, VCE = 1.OVdc, - - Products 11 -- 12.5 -- 19 30 -- -- Inc. @ mW FIGURE 1 - TEST FIGURE CIRCUIT AND FIGURE FOR NOISE POWER GAIN 2 - TEST OSCILLATOR CIRCUIT POWER ) FOR OUTPUT 1 e Capacitance values in PF Ll, L2 - Silver-plated brass rod, 1.1/2" at least 1/2" from L3 - 1/2 turn#16 AWG neared long and lIK' (c) dia. Install vertical chassis surface. wire, located l/Y from and (D) parallel to L2. * - External interlead shield to isotate collector lead from (E) emitter and base leads. Neutralization (Al (F) Connect 450.MHz signal generator (with RS = 50 ohms) to (B1 Procedure: input terminals Connect 50.ohm of amplifier. of amplifier. R F voltmeter acres output terminals ,,:,,?:` FIGURE 3 - NOISE FIGURE versus FREQUENCY , ~~1~? ,,. `~:~\,t\. ;,., tj ,s~'.~~~@RE `~)~'" 4 - NOISE RESISTANCE AND FIGURE versus SOURCE COLLECTOR CURRENT 10 9.0 -- VCE = 6.0 Vdc IC = 1.0 mAdc 8.0 o `, - g 7.0 -- g a 6.0 ~ 5.0 RS= Optimum = 250 Ohms@ (= 100 0hms@450 ,.?j 105 and 200 MHz MHz ) ,,t& ,*, ,?:~`~' ~i, \ ; 0 4.0 g- 3.0 -- z -- -- -- ---- --- 2.0 1.0 0 50 60 70 100 0.5 FIGURE o 0.5 5- NOISE RESISTANCE AND 0.7 1.0 Ic, ~OTO~Ok~ FIGURE COLLECTOR 1.0 2.0 versus SOURCE COLLECTOR 2,0 0.7 3.0 CURRENT Semiconductor CURRENT 5.0 7.0 10 (mAdc) Products 3,0 5.0 7.0 10 ,- FIGURE 13 - S22, OUTPUT REFLECTION COEFFICIENT ,d.i %;. ~+ $%. t$' !.+>,, .l*t\4,>,,$,' . ..... .$. W.I., ,..:>!,, ~*,:\\ FIGURE 14 - S12, REVERSE TRANSMISSION COEFFICIENT ~.., Fld@RE *;,@ 15 - S21, FORWARD TRANSMISSION -- MOTOROLA Semiconductor Products inc. (M> COEFFICIENT ,.. .,, ,. FIGURE 16 -s11, INPUT REFLECTION COEFFICIENT AND S22, OUTPUT REFLECTION e, COEFFICIENT e .. -- -- o --, `m @ MOTOROLA MOTOROLA INC.. 1972 Semiconductor Products Inc. DS5387RI --