●
IThe RF Line
NPN SILICON RF SMALL-SIGNAL TRANSISTORS
. . . designed primarily for use in high-gain, low-noise amplifier, oscil-
lator, and mixer applications. Can also be used in UHF converter
applications.
Total Device Dissipation @TA =25°C pD 200 mW
Derate above 25°C 1.14 mW/°C
Total Device Dissipation @TC =25°C pD 300 mW
Derate above 250C 1.72 mW/°C
Storage Temperature Range Tstg -65 to +200 Oc
I
2N3839
4
0.050 -
0,100
tin 1. Emitter
0.100 t_20, 2. Base
0.050 3. Collector
1° 03 4. Case
04
wi
\
Og
0.045v45, 0,048
/
CASE 20 (10)
TO-72 PACKAGE
Active Elements Isolated from Case
*ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise noted)
Characteristic Symbol Min Typ IMax Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage** BVCEO 15 —Vdc ‘~,.
(lC=3.0mAdc, iB ‘O)
—~.,’\\,.,\y;&i*
~.,,i,~....,+$.\,.
*il.,%‘+4.>
Collector-Base Breakdown Voltage BVc60 30 —~$*:r
(It= l. O#Adc, IE =O)
—..*),
,4..,’ .1,:,
Emitter-Base Breakdown Voltage ,,.,:*&.~$~
BVEBO 2.5 ~,,..l~$1
—#“~\t Vdc
(l E=l OpAdc, lC=O)
\:t;!$“
~.!,.jj.,.,t,{.,
Collector Cutoff Current .,>.,. !.!,,.......
[CBO .. . . .,,.
$.~:,:~.
<+:;:,
(vCB=15vdc, lE=o) Both Types pAdc
\,,
—!:~:~l
(VCB =15 Vdc, IE =O, TA =1500C)
—./+
2N3839 —1.0
ON CHARACTERISTICS
DC Current Gain hFE 30 150
(Ic =3.0 mAdc, VCE =1.0 Vdc)
—
DYNAMIC CHARACTERISTICS ,“., ..
,.~.’$t
.4. *$.,,,,,,
:+*,p....*.
Current-Gain–Bandwidth Product @2N2857 fT .$7%:. –1900 MHz
(lc= 5. OmAdc, VCE =6. OVdc, f=100 MHz) 2N3B39 @-
d> *~30* .2000
Collector-Base Capacitance Ccb ~:.~,,:$> —0.7 1.0
(VCB= lovdC,lE=o,f=o.l tol.O MHz) ,l.* ‘\~.~~. pF
~r’<,.:
,,$,..
Small-Signal Current Gain .t*~&k ‘:: 50 220
(Ic =2.0 mAdc, VCE =6.0 Vdc, f=1.0 kHz)
——
..!
,!,$ ,h
\
“JJ~,,-$.?%+~;F
Collector-Base Time Constant 2N28~~~ ?:%’CC 4.0 15
(IE =2.O mAdc, VCB =6.0 Vdc, f=31.9 MHz)
—ps
2N38j9 “<$ 1.0 —15
Noise Figure (Figure 1). . ,
.:$; Both NF dB
(I ~ = O.I mAdc, VCE =!.0 Vdc, RS =50 ohms, f=450 M~~+@$i~YPes —5.8 —
(lc= 1.5 mAdc, VCE =6.0 Vdc, RS =500hms, f‘45}*~?YN2857 —4.1 4.5
,Y .$$.“:b.
~**.$. ,.$ 2N3B39 —3,9
.)..!:,
FUNCTIONAL TEST .>t>,,”<‘*’
,
,{*:!.>...$~$$~$\\x.>
Common-Emitter Amplifier Power Gain (Fig@~,~~~
(IE =0.1 mAdc, VCE =1.OVdc, f=45$,&Jg~ GPe dB
—11 —
(Ic =1.5 mAdc, VCE =6.0 Vdc, f‘,4$~M~) 12.5 —19
Power Output (Figure 2) -’
.?:’‘
~-\,\\ .$\
.,., Pout 30
(1E=12 mAdc, VCB =10 V,@;i$$*”~ MHz)
— — mW
‘:!+> .>,
., .:
MOTOROLA Semiconductor Products Inc. @
e
o‘,
o
FIGURE 1 – TEST CIRCUIT FOR NOISE
FIGURE AND POWER GAIN
Capacitance values in PF
Ll, L2 –Silver-plated brass rod, 1.1/2” long and lIK’ dia. Install (c)
at least 1/2” from neared vertical chassis surface.
L3 -1/2 turn#16 AWG wire, located l/Y from and
parallel to L2. (D)
* – External interlead shield to isotate collector lead from
emitter and base leads. (E)
Neutralization Procedure:
(Al Connect 450.MHz signal generator (with RS =50 ohms) (F)
to input terminals of amplifier.
(B1 Connect 50.ohm RFvoltmeter acres output terminals
of amplifier.
FIGURE 2 – TEST CIRCUIT FOR
OSCILLATOR POWER OUTPUT
)1
,~~1,,.
,,:,,?:
‘‘~:~\,t\.~?;,.,
tj
FIGURE 3 – NOISE FIGURE versus FREQUENCY ,s~’.~~~@RE 4 – NOISE FIGURE versus SOURCE
‘~)~’” RESISTANCE AND COLLECTOR CURRENT
10
9.0 —VCE =6.0 Vdc
IC =1.0 mAdc
8.0 –RS= Optimum
()
=250 Ohms@ 105 and 200 MHz ,.?j
g7.0 —=100 0hms@450 MHz
,,t&
g6.0 ,*, \
,?:~‘~’~i,
a
~5.0
;
04.0
z
g- 3.0 — — — — — — -—
2.0
1.0
050 60 70 100 0.5 0.7 1.0 2.0 3,0 5.0 7.0 10
FIGURE 5- NOISE FIGURE versus SOURCE
RESISTANCE AND COLLECTOR CURRENT
0.5 0.7 1.0 2,0 3.0 5.0 7.0 10
Ic, COLLECTOR CURRENT (mAdc)
~OTO~Ok~ Semiconductor Products
,-
FIGURE 13 –S22, OUTPUT REFLECTION COEFFICIENT
,d.i %;.
~+ $%. t$’
!.+>,, .l*t\4,>,,$,’
. .....
.$. W.I., ,..:>!,,
~*,:\\
FIGURE 14 –S12, REVERSE TRANSMISSION COEFFICIENT Fld@RE 15 –S21, FORWARD TRANSMISSION COEFFICIENT
*;,@
~..,
MOTOROLA
—
Semiconductor Products inc. (M>
,.. ,.
.,,
e,
e
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FIGURE 16 –s11, INPUT REFLECTION COEFFICIENT AND S22, OUTPUT REFLECTION COEFFICIENT
—.. —
—, ‘m @MOTOROLA INC.. 1972
MOTOROLA Semiconductor Products Inc. —
DS5387RI
