BFR182T / BFR182TW
Document Number 85025
Rev. 1.3, 28-Apr-05
Vishay Semiconductors
www.vishay.com
1
23
1
2
1
3
Electrostatic sensitive device.
Observe precautions for handling.
13581
Silicon NPN Planar RF Transistor
Features
• Low noise figure
• High power gain
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
For low noise and high gain broadband amplifiers at
collector currents from 1 mA to 20 mA.
Mechanical Data
Typ: BFR182T
Case: SOT-23 Plastic case
Weight: approx. 8.0 mg
Marking: RG
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Typ: BFR182TW
Case: SOT-323 Plastic case
Weight: approx. 6.0 mg
Marking: WRG
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Maximum Thermal Resistance
1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu
Parameter Test condition Symbol Value Unit
Collector-base voltage VCBO 15 V
Collector-emitter voltage VCEO 10 V
Emitter-base voltage VEBO 2V
Collector current IC35 mA
Base current IB5mA
Total power dissipation Tamb ≤ 60 °C Ptot 200 mW
Junction temperature Tj150 °C
Storage temperature range Tstg - 65 to + 150 °C
Parameter Test condition Symbol Value Unit
Junction ambient 1) RthJA 450 K/W
e3
www.vishay.com
2
Document Number 85025
Rev. 1.3, 28-Apr-05
BFR182T / BFR182TW
Vishay Semiconductors
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Min Typ. Max Unit
Collector-emitter cut-off current VCE = 15 V, VBE = 0 ICES 100 μA
Collector-base cut-off current VCB = 10 V, IE = 0 ICBO 100 nA
Emitter-base cut-off current VEB = 1 V, IC = 0 IEBO 1μA
Collector-emitter breakdown
voltage
IC = 1 mA, IB = 0 V(BR)CEO 10 V
Collector-emitter saturation
voltage
IC = 30 mA, IB = 3 mA VCEsat 0.1 0.4 V
DC forward current transfer ratio VCE = 6 V, IC = 5 mA hFE 50 90
VCE = 8 V, IC = 20 mA hFE 100
BFR182T / BFR182TW
Document Number 85025
Rev. 1.3, 28-Apr-05
Vishay Semiconductors
www.vishay.com
3
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
Package Dimensions in mm (Inches)
Parameter Test condition Symbol Min Ty p . Max Unit
Transition frequency VCE = 6 V, IC = 5 mA,
f = 500 MHz
fT5.5 GHz
VCE = 8 V, IC = 20 mA,
f = 500 MHz
fT7.5 GHz
Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 0.3 pF
Collector-emitter capacitance VCE = 10 V, f = 1 MHz Cce 0.2 pF
Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 0.65 pF
Noise figure VCE = 6 V, IC = 5 mA, ZS = ZSopt,
f = 900 MHz
F1.5dB
VCE = 6 V, IC = 5 mA, ZS = ZSopt,
f = 1.75 GHz
F2.0dB
Power gain VCE = 8 V, IC = 20 mA,
ZS = 50 Ω, ZL = ZLopt,
f = 900 MHz
Gpe 15 dB
VCE = 8 V, IC = 20 mA,
ZS = 50 Ω, ZL = ZLopt,
f = 1.75 GHz
Gpe 11 dB
Transducer gain VCE = 8 V, IC = 20 mA,
f = 900 MHz, Z0 = 50 Ω
|S21e|214 dB
2.0 (0.079)
0.9 (0.035)
0.95 (0.037)0.95 (0.037)
0.52 (0.020)
BE
C
9511346
2.8 (.110)
3.1 (.122)
0.4 (.016)
0.95 (.037)0.95 (.037)
0.1 (.004) max.
1.20(.047)
1.43 (.056)
0.4 (.016)0.4 (.016)
0.098 (.005)
0.175 (.007)
0.95 (.037)
1.15 (.045)
2.35 (.092)
2.6 (.102)
ISO Method E
Mounting Pad Layout
www.vishay.com
4
Document Number 85025
Rev. 1.3, 28-Apr-05
BFR182T / BFR182TW
Vishay Semiconductors
Package Dimensions in mm (Inches)
96 12236
0.9 (0.035)
0.39 (0.015)
Mounting Pad Layout
0.95 (0.37) 0.95 (0.037)
2.0 (0.079)
1.00 (0.039)
10
0.10 (0.004) 0.10 (0.004)
2.05 (0.080)
2.00 (0.078)
1.25 (0.049)
0.30 (0.012)
1.3 (0.051)
S
O
M
e
t
h
o
d
BFR182T / BFR182TW
Document Number 85025
Rev. 1.3, 28-Apr-05
Vishay Semiconductors
www.vishay.com
5
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.