(INTERSIL FEATURES ' Fpsiony < 25 (2N4856, 2N4859) I p(oft) < 250 PA Switches +10 V Signals with +15 V Supplies (2N4858, 2N4861) ABSOLUTE MAXIMUM RATINGS @25C (unless otherwise noted) Maximum Temperatures Storage Temperature TO18 .~65C to +200C Operating Junction Temperature TO18 +200C Lead Temperature (Soldering, 10 sec time-limit) +300C Maximum Power Dissipation Device Dissipation @ Free Air Temperature 1.8W Linear Derating TO18 10mWw/ PC Maximum Voltages & Current 2N4856-58 2N4859-61 Ves Gate to Source -40V -30V Voltage . Yep Gate to Drain -40V -30 V Voltage Ig Gate Current 50 mA 50 mA ELECTRICAL CHARACTERISTICS (25C unless otherwise noted} 2N4856-2N4861 2N4856-2N4858 JAN, JTX, JTXV* N-Channel JFET PIN CHIP CONFIGURATION TOPOGRAPHY TO-18 5001B 90135 FULL RADIUS 0068, 00175 on 007? Tore SUBSTRATE IS GATE r og ona 023 0127 $. ! ~ ee a a $ . 04 SOUTH) Dp og ORDERING INFORMATION add JAN, JTX, JTXV, to basic part number to specify these devices. 2N4856,59 2N4857,60 2N4858,61 | TES DIT CHARACTERISTIC MIN MAX | MIN MAX | MIN MAX UNIT T CON TONS Gate-Source 2N4856-58 ~40 -40 -40 = 1HA, Vos = BVGSS Breakdown Voltage | 2N4859-61 =30 =30 =30 Vv | Ig=14HA, Vos =0 2N4856-58 ~250 -250 ~250 pA Vag = -20 V, Vps = 0 'Gss Gate Reverse Current | >nage9-61 7500 7500 ~500 | nA] Vgg=-15 V, Vps=9 jeere , 250 250 250 [ pA . _ _ Ip(off) Drain Cutoff Current 500 500 500 nA Vos = 15 V, Vgg=-10V 150C _ VGS{off) __Gate-Source Cutoff Voltage ~4 ~10 ~2 -6 | -0.8 ~4 Vv Vos = 15 V, !p = 0.6 nA ipss Saturation Drain Current 50 0 100 8 80 mA Vps= 18 V. Veg = 0 {Note 1) 0.75 0.50 0.50 Vv aa -=BIn= VpS(on) Drain-Source ON Voltage (20) al (5) (ma} ves=3ibet } fds(on) Drain-Source ON Resistance . 25 40 60 | ohm | Ves=0, lp =0 f= t kHz Ciss Common-Source Input Capacitance . 18 18 18 . -. _ Common-Source Reverse Transfer pF | Vpg=0. Vas = -10V f= 1 MHz Crss : 8 8 8 Capacitance 6 6 10 ns 464 2 2N4856,59 td . Turn-ON Delay Time {20) {10) (5) (mA) | Vpo=10V, AL = 983 2 2N4867,60 (-10} [-6] [-4] (v]} 1910 Q 2N4858,61 3 4 10 ns VGSilon) = 0 ty Rise Time (20) (10) (5) (mA) {-10] L-6) 4) Iv) J Mp(on) = (1, 25 50 100 ns toff Turn-OF F Time (20) {t0) (5) | {mA) } Vags(off) = 0) (-10] {-6] {-4]} Iv] NOTE: VoD 1, Pulse test required, pulsewidth = 100 ys, duty cycle <: 10%. _ VpD-VDS(ON} RL iptON) vin your INPUT PULSE SAMPLING SCOPE . RISE TIME 0.25 ns RISE TIME 0.75 ns Ra FALL TIME 0.75 INPUT RESISTANCE 1M 5082 PULSE WIDTH 100 ns INPUT CAPACITANCE 2.5 pt PULSE DUTY CYCLE < 10%