2N3634
2N3635
SILICON
PNP TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3634 and 2N3635
are silicon PNP epitaxial planar transistors designed for
general purpose switching and amplifier applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 140 V
Collector-Emitter Voltage VCEO 140 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 1.0 A
Power Dissipation PD 1.0 W
Power Dissipation (TC=25°C) PD 5.0 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance ΘJA 175 °C/W
Thermal Resistance ΘJC 35 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=100V 100 nA
IEBO V
EB=3.0V 50 nA
BVCBO I
C=100μA 140 V
BVCEO I
C=10mA 140 V
BVEBO I
E=10μA 5.0 V
VCE(SAT) I
C=10mA, IB=1.0mA 0.3 V
VCE(SAT) I
C=50mA, IB=5.0mA 0.5 V
VBE(SAT) I
C=10mA, IB=1.0mA 0.8 V
VBE(SAT) I
C=50mA, IB=5.0mA 0.65 0.9 V
fT V
CE=30V, IC=30mA, f=100MHz (2N3634) 150 MHz
fT V
CE=30V, IC=30mA, f=100MHz (2N3635) 200 MHz
Cob V
CB=20V, IE=0, f=1.0MHz 10 pF
Cib V
EB=1.0V, IC=0, f=1.0MHz 75 pF
NF VCE=10V, IC=0.5mA, RS=1.0kΩ, f=1.0kHz 3.0 dB
ton V
CC=100V, VBE=4.0V, IC=50mA 400 ns
toff I
B1=IB2=5.0mA 600 ns
TO-39 CASE
R1 (17-September 2013)
www.centralsemi.com
2N3634
2N3635
SILICON
PNP TRANSISTORS
TO-39 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)
2N3634 2N3635
SYMBOL TEST CONDITIONS MIN MAX MIN MAX
hFE V
CE=10V, IC=0.1mA 40 - 80 -
hFE V
CE=10V, IC=1.0mA 45 - 90 -
hFE V
CE=10V, IC=10mA 50 - 100 -
hFE V
CE=10V, IC=50mA 50 150 100 300
hFE V
CE=10V, IC=150mA 25 - 50 -
hfe V
CE=10V, IC=10mA, f=1.0kHz 40 160 80 320
www.centralsemi.com
R1 (17-September 2013)
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(001)
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