ee FAIRCHILD ee SEMICONDUCTOR m [3] A29 CONNECTION MMBD1401A / 1403A / 1404A / 1405A DIAGRAMS 1401A 3 1 3 ; 14034 1 2 3 2NC 1 2 lL] [2] 14044 14054 MARKING MMBD1401A A29 MMBD1404A A33 MMBD1403A A382 MMBD1405A A34 1 2 1 2 High Voltage General Purpose Diode Sourced from Process 2V. Absol ute Maxi mu m Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units Wi Working Inverse Voltage 175 Vv lo Average Rectified Current 200 mA lr DC Forward Current 600 mA if Recurrent Peak Forward Current 700 mA iffsurge) Peak Forward Surge Current Pulse width = 1.0 second 1.0 A Pulse width = 1.0 microsecond 2.0 A Tstg Storage Temperature Range -55 to +150 C Ty Operating Junction Temperature 150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units MMBD1401A-1405 A* Pp Total Device Dissipation 350 mw Derate above 25C 2.8 mwrc Reva Thermal Resistance, Junction to Ambient 357 C/W * Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2 1999 Fairchild Semiconductor Corporation MMBD1401A-1405A, Rev. A Vsovl / VvOrl / VEOrl / VLOVLGEWWElectrical Characteristics High Voltage General Purpoise Diode (continued) TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Max | Units By Breakdown Voltage IR = 100 pA 250 Vv IR Reverse Current Va = 120 V 40 nA Va=175V 100 nA Ve Forward Voltage IF=10mA 800 mV lF=50mA 760 920 mv MMBD1401A/1403A | Ir =200mA 14 Vv MMBD1404A/ 1405A | Ir = 200 mA 1.0 Vv MMBD1401A/1403A | IF =300mA 1.25 Vv MMBD1404A/1405A | IF =300 mA 1.1 Vv Co Diode Capacitance Va =O, f = 1.0 MHz 2.0 pF Trr Reverse Recovery Time lp =IR =30 mA, 50 ns IAR = 1.0 mA, RL = 1000 Typical Characteristics REVERSE VOLTAGE vs REVERSE CURRENT BV -1.0 to 100 uA ~ 325 = Ta= 25C Ww z A o > Ww w 300 ec wi > iy ec ce > 275 3 5 10 20 ~=30 50 100 In - REVERSE CURRENT (uA) REVERSE CURRENT vs REVERSE VOLTAGE IR - 180 to 255 V - REVERSE CURRENT (nA) Ih 180 200 220 240 255 Va - REVERSE VOLTAGE (V) GENERAL RULE: The Reverse Current of a diode will approximately double for every ten Degree C increase in Temperature REVERSE CURRENT vs REVERSE VOLTAGE IR - 55 to 205 V ao ao S Qo nN o - REVERSE CURRENT (nA) 3 8 0 55 75 95 115 1385 155 175 195 Vr - REVERSE VOLTAGE (V) GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature ln FORWARD VOLTAGE vs FORWARD CURRENT VF -1.0 to 100 uA ns a oO - FORWARD VOLTAGE (mv) a 6 20 30 50 100 1 2 3 5 10 Fk - FORWARD CURRENT (uA) MMBD1401A-1405A, Rev. A Vsovl / VvOrl / VEOrl / VLOVLGEWWHigh Voltage General Purpoise Diode (continued) Typical Characteristics (continued) FORWARD VOLTAGE vs FORWARD CURRENT VF-0.1t010mA ~ ny a 700 V_ - FORWARD VOLTAGE (mV) a @ 3 3 3 3 450 0.1 02 03 05 1 2 3 5 10 Ir - FORWARD CURRENT (mA) Forward Voltage vs Ambient Temperature VF - 1.0 uA - 10 mA (-40 to + 80 Deg C) ao Qo oO oD Qo oO BR Qo oO 200 V_ - FORWARD VOLTAGE (mV) 0.001 0.003 0.01 0.03 O01 03 1 3 10 IF - FORWARD CURRENT (mA) REVERSE RECOVERY TIME vs REVERSE RECOVERY CURRENT (Irr) a QoQ Qo REVERSE RECOVERY (nS) w 6 nN oO 1.5 2 2.5 3 Irr - REVERSE RECOVERY CURRENT (mA) FORWARD VOLTAGE vs FORWARD CURRENT VF -10 to 800 mA S14 ni3 iy WARD VOLTAG f& 0.9 - FO VE ao af 10 20 30 50 100 200 300 500 800 Ir - FORWARD CURRENT (mA) CAPACITANCE vs REVERSE VOLTAGE VR-Oto15V 1.3 i 1.2 & 3 S 1.4 E oO 1 & < 0 0.9 0.8 0 2 4 6 8 10 12 14 15 REVERSE VOLTAGE (V) Average Rectified Current (lo) & Forward Current (I) versus Ambient Temperature (T4 500 < 400 5 300 Wu = 5 200 0 = 100 0 50 100 150 T,- AMBIENT TEMPERATURE ( C) MMBD1401A-1405A, Rev. A Vsovl / VvOrl / VEOrl / VLOVLGEWWHigh Voltage General Purpose Diode (continued) Typical Characteristics (continued) POWER DERATING CURVE nN wo & ao o o Qo Qo oO oO oO oO Po - POWER DISSIPATION (mW) 2 3 0 50 100 150 200 lo - AVERAGE TEMPERATURE (C) MMBD1401A-1405A, Rev. A Vsovl / VvOrl / VEOrl / VLOVLGEWWTRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ISOPLANAR UHC CoolFET MICROWIRE VCX CROSSVOLT POP E?CMOS PowerTrench FACT Qs FACT Quiet Series Quiet Series FAST SuperSOT-3 FASTr SuperSOT-6 GTO SuperSOT-8 HiSeC TinyLogic DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or This datasheet contains the design specifications for In Design product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.