Supertex inc.
Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com
2N6660
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Hi-Rel processing available
Applications
Motor controls
Converters
Ampliers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
General Description
The Supertex 2N6660 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure and
Supertex’s well-proven silicon-gate manufacturing process.
This combination produces a device with the power handling
capabilities of bipolar transistors, and the high input
impedance and positive temperature coefcient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching
speeds are desired.
Ordering Information
Device Package BVDSS/BVDGS
(V)
RDS(ON)
(max)
(Ω)
ID(ON)
(min)
(A)
2N6660 TO-39 60 3.0 1.5
Absolute Maximum Ratings
Parameter Value
Drain-to-source voltage BVDSS
Drain-to-gate voltage BVDGS
Gate-to-source voltage ±20V
Operating and storage temperature -55°C to +150°C
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
N-Channel Enhancement-Mode
Vertical DMOS FET
Product Marking
YY = Year Sealed
WW = Week Sealed
2N6660
YYWW
TO-39
GATE
SOURCE
DRAIN
Pin Conguration
TO-39
(Case : Drain)
Package may or may not include the following marks: Si or
TO-39 package is RoHS compliant (‘Green’).
Consult factory for die / wafer form part numbers.
Refer to Die Specication VF21 for layout and dimensions.
2
2N6660
Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com
Electrical Characteristics (TA = 25°C unless otherwise specied)
Sym Parameter Min Typ Max Units Conditions
BVDSS Drain-to-source breakdown voltage 60 - - V VGS = 0V, ID = 10µA
VGS(th) Gate threshold voltage 0.8 - 2.0 V VGS = VDS, ID = 1.0mA
ΔVGS(th) VGS(th) change with temperature - -3.8 -5.5 mV/OC VGS = VDS, ID = 1.0mA
IGSS Gate body leakage current - - 100 nA VGS = ±20V, VDS = 0V
IDSS Zero gate voltage drain current
- - 10
µA
VGS = 0V, VDS = Max rating
- - 500 VDS = 0.8 Max Rating,
VGS = 0V, TA = 125OC
ID(ON) On-state drain current 1.5 - - A VGS = 10V, VDS = 10V
RDS(ON)
Static drain-to-source on-state
resistance
- - 5.0 ΩVGS = 5.0V, ID = 0.3A
- - 3.0 VGS = 10V, ID = 1.0A
GFS Forward transconductance 170 - - mmho VDS = 25V, ID = 0.5A
CISS Input capacitance - - 50
pF
VGS = 0V,
VDS = 24V,
f = 1.0MHz
COSS Common source output capacitance - - 40
CRSS Reverse transfer capacitance - - 10
t(ON) Turn-on time - - 10 ns VDD = 25V, ID = 1.0A,
RGEN = 25Ω
t(OFF) Turn-off time - - 10
VSD Diode forward voltage drop - 1.2 - V VGS = 0V, ISD = 1.0A
trr Reverse recovery time - 350 - ns VGS = 0V, ISD = 1.0A
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
Thermal Characteristics
Package
ID
(continuous)
(mA)
ID
(pulsed)
(A)
Power Dissipation
@TC = 25OC
(W)
θjc
(OC/W)
θja
(OC/W)
IDR
(mA)
IDRM
(A)
TO-39 410 3.0 6.25 20 125 410 3.0
† ID (continuous) is limited by max rated Tj.
90%
10%
90% 90%
10%
10%
Pulse
Generator
V
DD
RL
OUTPUT
D.U.T.
t(ON)
td(ON)
t(OFF)
td(OFF)
tr
INPUT
INPUT
OUTPUT
10V
VDD
RGEN
0V
0V
tf
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)
©2011 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited.
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA
94089
Tel: 408-222-8888
www
.supertex.com
3
2N6660
(The package drawing(s) in this data sheet may not reect the most current specications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Doc.# DSFP-2N6660
C031411
3-Lead TO-39 Package Outline (N2)
1
2
3
Side View
Bottom View
ΦD1
ΦD
A
h
L
Φb
jk
Φa
123
β
α
Seating
Plane
β
Symbol α β AΦaΦbΦDΦD1 h j k L
Dimension
(inches)
MIN
45O
NOM
90O
NOM
.240 .190 .016 .350 .315 .009 .028 .029 .500
NOM ---------
MAX .260 .210 .021 .370 .335 .125 .034 .040 .560*
JEDEC Registration TO-39.
* This dimension is not specied in the JEDEC drawing.
Drawings not to scale.
Supertex Doc. #: DSPD-3TO39N2, Version B052009.