Switching and General Purpose Transistors 2n2369A (siticon) Vero = 15 V (JAN 2N2369A AVAILABLE) ten < 12 ns Tort < 18 ns ) NPN silicon epitaxial transistor for high-speed range of 10 100 mAdc switching applications. Speci- fications provided at -55C to +125C for critical de CASE 22 characteristics. (TO-18) Collector connected to case MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage Varo 15 Vdc Collector-Emitter Voltage Vors 40 Vde Collector-Base Voltage Vop 40 Vdc Emitter-Base Voltage VEB 4.5 Vde Collector Current Continuous In 200 mAdc Peak (10 us Pulse) 500 Total Device Dissipation @ Ty = 25C Py 0.36 Watt Derate above 25C 2. 06 mw/Cc Total Device Dissipation @ Te = 25C Py 1.2 Watts Derate above 25C 6.85 mWw/C Operating Junction Temperature Range Ts +200 c Storage Temperature Range T ste -65 to +200 C SWITCHING TIME EQUIVALENT TEST CIRCUITS FIGURE 1 t., CIRCUIT 10 mA FIGURE 2 t.++ CIRCUIT 10 mA PULSE WIDTH (t,) = 300 ns 7 Ss PULSE WIDTH (t,) = 300 ns DUTY CYCLE = 2.0% DUTY CYCLE = 2.0% { Total shunt capacitance of test jig and connectors. 8-134