© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 11 1Publication Order Number:
MJ15003/D
MJ15003 (NPN),
MJ15004 (PNP)
Preferred Device
Complementary Silicon
Power Transistors
The MJ15003 and MJ15004 are PowerBaset power transistors
designed for high power audio, disk head positioners and other linear
applications.
Features
•High Safe Operating Area (100% Tested) − 5.0 A @ 50 V
•For Low Distortion Complementary Designs
•High DC Current Gain − hFE = 25 (Min) @ IC = 5 Adc
•Pb−Free Packages are Available*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎ
ÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
Value
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Voltage
ÎÎÎ
ÎÎÎ
VCEO
ÎÎÎÎ
ÎÎÎÎ
140
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Base Voltage
ÎÎÎ
ÎÎÎ
VCBO
ÎÎÎÎ
ÎÎÎÎ
140
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter−Base Voltage
ÎÎÎ
ÎÎÎ
VEBO
ÎÎÎÎ
ÎÎÎÎ
5
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current − Continuous
ÎÎÎ
ÎÎÎ
IC
ÎÎÎÎ
ÎÎÎÎ
20
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current − Continuous
ÎÎÎ
ÎÎÎ
IB
ÎÎÎÎ
ÎÎÎÎ
5
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Current − Continuous
ÎÎÎ
ÎÎÎ
IE
ÎÎÎÎ
ÎÎÎÎ
25
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation @ TC = 25°C
Derate above 25°C
ÎÎÎ
ÎÎÎ
PD
ÎÎÎÎ
ÎÎÎÎ
250
1.43
ÎÎÎ
ÎÎÎ
W
W/°C
ÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction
Temperature Range
ÎÎÎ
Î
Î
Î
ÎÎÎ
TJ, Tstg
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
–65 to +200
ÎÎÎ
Î
Î
Î
ÎÎÎ
°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎ
ÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction−to−Case
ÎÎÎ
ÎÎÎ
RqJC
ÎÎÎÎ
ÎÎÎÎ
0.70
ÎÎÎ
ÎÎÎ
°C/W
ÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎ
Maximum Lead Temperature for Soldering
Purposes 1/16″ from Case for v 10 secs
ÎÎÎ
Î
Î
Î
ÎÎÎ
TL
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
265
ÎÎÎ
Î
Î
Î
ÎÎÎ
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
Preferred devices are recommended choices for future use
and best overall value.
20 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
140 VOLTS, 250 WATTS
Device Package Shipping
ORDERING INFORMATION
MJ15003 TO−204AA 100 Units/Tray
TO−204AAMJ15004
TO−204AA
(Pb−Free)
MJ15004G
MJ15003G TO−204AA
(Pb−Free) 100 Units/Tray
100 Units/Tray
100 Units/Tray
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAM
MJ1500x = Device Code
x = 3 or 4
G = Pb−Free Package
A = Location Code
YY = Year
WW = Work Week
MEX = Country of Orgin
MJ1500xG
AYYWW
MEX
MJ15003 (NPN), MJ15004 (PNP)
http://onsemi.com
2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎ
ÎÎÎÎ
Symbol
Min
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Emitter Sustaining Voltage (Note 1)
(IC = 200 mAdc, IB = 0)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
VCEO(sus)
ÎÎ
140
Î
−
Î
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
ICEX
ÎÎ
−
−
Î
100
2
Î
mAdc
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 140 Vdc, IB = 0)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
ICEO
ÎÎ
−
Î
250
Î
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
ÎÎÎÎ
ÎÎÎÎ
IEBO
−
100
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SECOND BREAKDOWN
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Second Breakdown Collector Current with Base Forward Baised
(VCE = 50 Vdc, t = 1 s (non repetitive))
(VCE = 100 Vdc, t = 1 s (non repetitive))
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
IS/b
ÎÎ
ÎÎ
5.0
1.0
Î
Î
−
−
Î
Î
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 5 Adc, VCE = 2 Vdc)
ÎÎÎÎ
ÎÎÎÎ
hFE
25
150
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Emitter Saturation Voltage
(IC = 5 Adc, IB = 0.5 Adc)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
VCE(sat)
ÎÎ
−
Î
1.0
Î
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Emitter On Voltage
(IC = 5 Adc, VCE = 2 Vdc)
ÎÎÎÎ
ÎÎÎÎ
VBE(on)
−
2.0
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current Gain — Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, ftest = 0.5 MHz)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
fT
ÎÎ
2.0
Î
−
Î
MHz
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
cob
ÎÎ
−
Î
1000
Î
pF
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.
IC, COLLECTOR CURRENT (AMP)
5
Figure 1. Active−Region Safe Operating Area
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
5 7 10 200
10
2
2 3 50 70 10020 30
7
20
1
3
0.5
0.2
0.7
0.3
TC = 25°C
15
150
TJ = 200°C
BONDING WIRE LIMITED
THERMAL LIMITATION (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
There are two limitations on the powerhandling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on TJ(pk) = 200°C; TC is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
MJ15003 (NPN), MJ15004 (PNP)
http://onsemi.com
3
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO−204AA OUTLINE SHALL APPLY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A1.550 REF 39.37 REF
B−−− 1.050 −−− 26.67
C0.250 0.335 6.35 8.51
D0.038 0.043 0.97 1.09
E0.055 0.070 1.40 1.77
G0.430 BSC 10.92 BSC
H0.215 BSC 5.46 BSC
K0.440 0.480 11.18 12.19
L0.665 BSC 16.89 BSC
N−−− 0.830 −−− 21.08
Q0.151 0.165 3.84 4.19
U1.187 BSC 30.15 BSC
V0.131 0.188 3.33 4.77
A
N
E
C
K
−T− SEATING
PLANE
2 PLD
M
Q
M
0.13 (0.005) Y M
T
M
Y
M
0.13 (0.005) T
−Q−
−Y−
2
1
UL
GB
V
H
TO−204 (TO−3)
CASE 1−07
ISSUE Z
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
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