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NOT FOR NEW DESIGN
November 2000
This is information on a product still in production but not recommended for new designs.
M2732A
NMOS 32 Kbit (4Kb x 8) UV EPROM
FAST ACCESS TIM E: 200ns
EXTENDED TEMPERATURE RANGE
SINGLE 5V SUPPLY VOLTAGE
LOW STA NDBY CURRENT: 35 m A max
INPUTS and OUT PUTS TTL COMPATI BLE
DURING READ and PROGRAM
COMPLETELY STATIC
DESCRIPTION
The M2732A is a 32,768 bit UV erasable and elec-
trically progr ammable memory EPROM. It is orga-
nized as 4,096 words by 8 bits. T he M 273 2A with
its single 5V power supply and with an access time
of 200 ns, is ideal suited for applications where
fast turn around and pattern experimentation are
important requirements.
The M2732A is housed in a 24 pin Window Ce-
ramic Frit-Seal Dual-in-Line package. The trans-
parent lid allows the user to expose the chip to
ultraviolet light to erase the bit pattern. A new pat-
tern can be then written to the device by following
the programming procedure.
Figure 1. Logic Diagram
AI00780B
12
A0-A11 Q0-Q7
VCC
M2732A
GVPP
E
VSS
8
1
24
FDIP24 W (F)
Q2
VSS
A3
A0
Q0
Q1
A2
A1
GVPP
Q5
A10
E
Q3
A11
Q7
Q6
Q4
A4
VCC
A7
AI00781
M2732A
8
1
2
3
4
5
6
7
9
10
11
12
20
19
18
17
16
15
A6
A5 A9
A8
23
22
21
14
13
24
Figu re 2. DIP P in Conn ecti ons
Symbol Parameter Value Unit
TAAmbient Operating Temperature grade 1
grade 6 0 to 70
–40 to 85 °C
TBIAS Temperature Under Bias grade 1
grade 6 –10 to 80
–50 to 95 °C
TSTG Storage Temperature –65 to 125 °C
VIO Input or Output Voltages –0.6 to 6 V
VCC Supply Voltage –0.6 to 6 V
VPP Program Supply Voltage –0.6 to 22 V
Note: Except f or the rat ing "Operating Temperature Range", stresses above th ose listed in the Table "Absolute Max imum R atings" may c ause
permanent damage to the device. These a re stress ratings only and operation of the device at these or an y other conditions above those
indicated in the Operati ng sect ions of t his speci fic ation is not implied. E xposure t o A b solut e Maximum Ratin g condit ions for extended periods
may affect device reli ability. Refer als o to the STMicroelectronics SURE Program and ot her relevant quality documents.
Table 2. Ab sol u te Maxim u m Ratin g s
DEVI CE OPERATION
The six modes of operation for the M2732A are
listed in the Operating Modes Table. A single 5V
power supply is required in the read mode. All
inputs are TT L level except f or VPP.
Read Mode
The M2732A has two control functions, both of
which must be logically satisfied in order to obtain
data at the o utputs. Chip Enable (E) is the power
control and should be used for device selection.
Out put Enable (G) is the o utput c ontrol and should
be used to gate data to the output pins, inde-
pendent of device selection.
Assuming that the add resses are stable, address
access time (tAVAQ) is equal to the delay from E to
output (t ELQV). Data is available at the outputs after
the falling edge of G, assuming that E has been low
and the addresses have been stable for at least
tAVQV-tGLQV.
S tan dby Mo d e
The M2732A has a standby mode which reduces
the active power current by 70 %, from 125 mA to
35 mA. The M2732A is placed in the standby mode
by applying a TTL high signal to E input. When in
standby mode, the outputs are in a high impedance
stat e, independent of the GVPP input.
Two Line Output Control
Because M2732As are usually used in larger mem-
ory arrays, this product features a 2 line control
function which accommodates the use of multiple
memory connection. The two line control function
allows:
a. the lo w est poss ible memory power dissipation,
b. complete ass urance that out put bus c ontent i on
will not occur.
To most efficiently use these two control lines, it is
recomm ended that E be decoded and used as t he
primary device selecting function, while G should
be made a common connection to all devices in the
array and connected to the READ line from the
sys tem control bus .
This ensures that all deselected memory devices
are in their low p ower standby mode and that the
output pins are only active when data is required
from a particular memory device.
M2732A
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Programming
W hen delivered, and after each erasure, all bits of
the M2732A are in the “ 1" state. Data is introduced
by selectively programming ”0’s" into the desired
bit locations. Although only “0’s” will be pro-
gramm ed, both “1’ s” a nd “0’s ” can be present ed i n
the data word. The only way to change a “0" to a
”1" is by ultraviolet light erasure.
The M2732A is in the programming mode when the
GVPP input is at 21V. A 0.1µF capacitor must be
placed across GVPP and ground to suppress spu-
rious voltage transients which may damage the
device. The data to be programmed is applied, 8
bits in parallel, to the data output pin s. The levels
required for the address and data inputs are TTL.
When the address and data are stable, a 50ms,
active low, TTL program pulse is appl ied t o the E
input. A program pulse must be applied at each
address location to b e programmed. Any location
can be programmed at any time - either individually,
sequentially, or at random. The progr am pulse has
a maximum width of 55ms. The M2732A must not
be programmed with a DC signal applied to the E
input.
Programming of multiple M2732As in parallel with
the same data can be easily ac complished due to
the simplicity of the programming requirements.
Inputs of the paralleled M2732As may be con-
nected together when they are programmed with
the same data. A low level TTL pulse applied to the
E input programs the paralleled 2732As.
Pro gram In hibit
Programming of multiple M2732As in parallel with
different data is also easily accomplished. Except
for E, all lik e inputs (including GVPP) of the parallel
M2732As may be common. A TTL level program
pulse applied to a M2732A’s E input with GVPP at
21V will program that M2732A . A high level E input
inhibits the other M2732As from being pro-
grammed.
Program Verify
A verify should be performed on the programmed
bits to determine that they were correctly pro-
grammed. The verify is carried out with GVPP and
E a t VIL.
ERASURE OPERATION
The erasure characteristics of the M2732A are
such that erasure begins when the cells are ex-
posed to light with wavelengths shorter than ap-
proximately 4000 Å. It should be noted that sunlight
and certa in types of fluorescent lamps hav e wave-
lengths in the 3000-4000 Å range. Research shows
that constant exposure to room level fluorescent
lighting could erase a typical M2732A in approxi-
mately 3 years, while it would take approximately
1 week to cause erasure when exposed to the
direct sunlight. If the M2732A is to be exposed to
these types of lighting conditions for extended pe-
riods of t ime, it is suggested that opaque labels b e
put over the M2732A window to prevent uninten-
tio nal erasure.
The recommended erasure procedure for the
M2732A is exposure to shortwave ultraviolet light
which has a wav elength of 2537 Å. The int egrated
dose (i.e. UV intensity x exposure time) for erasure
should be a minimum of 15 W-sec/cm2. The era-
sure time with this dosage is approximately 15 to
20 minutes using an ultraviolet lamp with 12000
µW/cm2 power rating. The M2732A should be
placed within 2.5 cm of the lamp tubes during
erasure. Some lamps have a filter on their tubes
which should be removed before erasur e.
Mode E GVPP VCC Q0 - Q7
Read VIL VIL VCC Data Out
Program VIL Pulse VPP VCC Data In
Verify VIL VIL VCC Data Out
Program Inhibit VIH VPP VCC Hi-Z
Standby VIH XV
CC Hi-Z
Note: X = V IH or VIL.
Table 3. Op erati ng Mo de s
M2732A
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AI00827
2.4V
0.45V
2.0V
0.8V
Figu re 3. AC Testing I n put Outp ut Waveform s
Input Rise and Fall Times 20ns
Input Pulse Voltages 0.45V to 2.4V
Input and Output Timing Ref. Voltages 0.8V to 2.0V
AC MEASUREMENT CONDITIONS
AI00828
1.3V
OUT
CL = 100pF
CL includes JIG capacitance
3.3k
1N914
DEVICE
UNDER
TEST
Fi gure 4. AC Testi ng Load Ci rcui t
Note that Output Hi-Z is defined as the point where data
is no longer driven.
Symbol Parameter Test Condition Min Max Unit
CIN Input Capacitance (except GVPP)V
IN = 0V 6 pF
CIN1 Input Capacitance (GVPP)V
IN = 0V 20 pF
COUT Output Capacitance VOUT = 0V 12 pF
Note: 1. Sampled only, not 100% tested.
Table 4. Capacit ance (1) (TA = 2 5 °C, f = 1 MHz )
AI00782
tAXQX
tEHQZ
DATA OUT
A0-A11
E
G
Q0-Q7
tAVQV
tGHQZ
tGLQV
tELQV
VALID
Hi-Z
Figur e 5. Read Mode AC Waveform s
M2732A
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Symbol Alt Parameter Test
Condition
M2732A Unit
-2, -20 blank, -25 -3 -4
Min Max Min Max Min Max Min Max
tAVQV tACC Address Valid to
Output Valid E = VIL,
G = VIL 200 250 300 450 ns
tELQV tCE Chip Enable Low to
Output Valid G = VIL 200 250 300 450 ns
tGLQV tOE Output Enable Low
to Output Valid E = VIL 100 100 150 150 ns
tEHQZ (2) tDF Chip Enable High to
Output Hi-Z G = VIL 0 60 0 60 0 130 0 130 ns
tGHQZ (2) tDF Output Enable High
to Output Hi-Z E = VIL 0 60 0 60 0 130 0 130 ns
tAXQX tOH Address Transition to
Output Transition E = VIL,
G = VIL 0000ns
Notes: 1. VCC must be ap plie d simultaneously with or befo re VPP and removed simultaneously or af ter VPP.
2. Sampled only, not 100% tested.
Tabl e 6. Read Mode AC Ch aracterist ics (1)
(TA = 0 to 70 °C or –40 to 85 °C; VCC = 5V ± 5% or 5V ± 10%; V PP = V CC)
Symbol Parameter Test Condition Value Unit
Min Max
ILI Input Leakage Current 0 VIN VCC ±10 µA
ILO Output Leakage Current VOUT = VCC ±10 µA
ICC Supply Current E = VIL, G = VIL 125 mA
ICC1 Supply Current (Standby) E = VIH, G = VIL 35 mA
VIL Input Low Voltage –0.1 0.8 V
VIH Input High Voltage 2 VCC + 1 V
VOL Output Low Voltage IOL = 2.1mA 0.45 V
VOH Output High Voltage IOH = –400µA 2.4 V
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or af te r VPP.
Tabl e 5. Read Mod e DC Characteri stics (1)
(TA = 0 to 70 °C or –40 to 85 °C; VCC = 5V ± 5% or 5V ± 10%; V PP = VCC)
M2732A
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Symbol Parameter Test Condition Min Max Units
ILI Input Leakage Current VIL VIN VIH ±10 µA
ICC Supply Current E = VIL, G = VIL 125 mA
IPP Program Current E = VIL, G = VPP 30 mA
VIL Input Low Voltage –0.1 0.8 V
VIH Input High Voltage 2 VCC + 1 V
VOL Output Low V ol tage IOL = 2.1mA 0.45 V
VOH Output High V oltage IOH = –400µA 2.4 V
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or af ter VPP.
Tabl e 7. Pro g rammi ng Mod e DC Characteri stics (1)
(TA = 25 °C; VCC = 5V ± 5%; V PP = 21V ± 0.5V)
Symbol Alt Parameter Test Condition Min Max Units
tAVEL tAS Address Valid to Chip Enable
Low 2µs
tQVEL tDS Input Valid to Chip Enable Low 2 µs
tVPHEL tOES VPP High to Chip Enable Low 2 µs
tVPL1VPL2 tPRT VPP Rise T i me 50 ns
tELEH tPW Chip Enable Program Pulse
Width 45 55 ms
tEHQX tDH Chip Enable High to Input
Transition 2µs
tEHVPX tOEH Chip Enable High to VPP
Transition 2µs
tVPLEL tVR VPP Low to Chip Enable Low 2 µs
tELQV tDV Chip Enable Low to Output
Valid E = VIL, G = VIL 1µs
tEHQZ tDF Chip Enable High to Output
Hi-Z 0 130 ns
tEHAX tAH Chip Enable High to Address
Transition 0ns
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneous ly or after V PP.
Table 8. Pro gram min g Mo de AC C haract eristi cs (1)
(TA = 25 °C; VCC = 5V ± 5%; VPP = 21V ± 0.5V )
M2732A
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AI00783
tVPLEL
PROGRAM
DATA IN
A0-A11
E
GVPP
Q0-Q7 DATA OUT
tAVEL
tQVEL
tVPHEL
tEHQX
tEHVPX
tELEH
tELQV
tEHAX
tEHQZ
VERIFY
VALID
Figure 6. Programmi ng and Verify Modes AC Waveform s
Speed and VCC Tolerance
-2 200 ns, 5V ±5%
blank 250 ns, 5V ±5%
-3 300 ns, 5V ±5%
-4 450 ns, 5V ±5%
-20 200 ns, 5V ±10%
-25 250 ns, 5V ±10%
Package
F FDIP24W
Temperature Range
1 0 to 70 °C
6 –40 to 85 °C
Exam ple: M2732A -2 F 1
ORDERING INFORMATION SCHEME
For a list of available options (Speed, V CC Tolerance, Package, etc...) refer to the current Memory Shortform
catalogue.
For fur ther information o n any aspect of this device, please contac t STMicroelectronics Sales Office nearest
to you.
M2732A
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FDIPW-a
A2
A1
A
L
B1 B e1
D
S
E1 E
N
1
CαeA
e3
Symb mm inches
Typ Min Max Typ Min Max
A 5.71 0.225
A1 0.50 1.78 0.020 0.070
A2 3.90 5.08 0.154 0.200
B 0.40 0.55 0.016 0.022
B1 1.17 1.42 0.046 0.056
C 0.22 0.31 0.009 0.012
D 32.30 1.272
E 15.40 15.80 0.606 0.622
E1 13.05 13.36 0.514 0.526
e1 2.54 0.100
e3 27.94 1.100
eA 16.17 18.32 0.637 0.721
L 3.18 4.10 0.125 0.161
S 1.52 2.49 0.060 0.098
7.11 0.280
α4°15°4°15°
N24 24
Drawing is not to sc ale
FDIP24W - 24 pin Ceramic Frit-seal DIP, with w indow
M2732A
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M2732A
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by i m pl i cation or oth erwise under any pat ent or paten t ri ghts of STMic roelec tr onics. Specifications ment i oned in this publicati on are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as c ri t i cal comp onents in l i f e support devices or systems without express writ ten appr oval of STMi croel ectronics.
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