PAGE . 1
STAD-MAY.23.2006
MMBT4401
.083(2.10)
.020(.50)
.006(.15)
.119(3.00)
.056(1.40)
.103(2.60)
.044(1.10)
.007(.20)MIN
.066(1.70)
.006(.15)MAX
.013(.35)
.002(.05)
.110(2.80)
.047(1.20)
.086(2.20)
.035(0.90)
SOT- 23 Unit: inch (mm)
NPN GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE 40 V olts 225 mWatts
FEATURES
• NPN epitaxial silicon, planar design
• Collector-emitter voltage VCE = 40V
• Collector current IC = 600mA
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DAT A
• Case: SOT-23, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.008 gram
• Marking: M4A
POWER
ABSOLUTE RATINGS
RETEMARAPlobmySeulaVstinU
egatloVrettimE-rotcelloC V
CEO
04V
egatloVesaB-rotcelloC V
CBO
06V
egatloVesaB-rettimE V
EBO
0.6V
suounitnoC-tnerruCrotcelloC I
C
006Am
THERMAL CHARACTERISTICS
RETEMARAPlobmySeulaVstinU
)1etoN(noitapissiDrewoPxaM P
TOT
522Wm
tneibmAotnoitcnuJ,ecnatsiseRlamrehT Rθ
JA
655
O
W/C
erutarepmeTnoitcnuJ T
J
051ot55-
O
C
erutarepmeTegarotS IT
STG
051ot55-
O
C
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.
NPN
Fig.34