2N3903
NPN General Purpose Amplifier
2N3903
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 100 mA.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Vo ltage 40 V
VCBO Collector-Base Voltage 60 V
VEBO E m i tter - Base Voltage 6 . 0 V
ICC ollector Current - Continuous 200 mA
TJ, T stg Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Characteristic Max Units
2N3903
PDTo ta l De vice Dissip at i on
Derate above 25°C625
5.0 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 °C/W
CBETO-92
2001 Fairchild Semiconductor Corporation 2N3903, Rev A
2N3903
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symb ol Parameter Test Conditions Min Max Un its
V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 40 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 1 0 µA, IE = 0 60 V
V(BR)EBO Em it ter - Bas e B r e akdown Voltage IE = 10 µA, IC = 0 6.0 V
ICEX Collector Cutoff Current VCE = 3 0 V, V OB = 3.0 V 50 nA
IBL Ba se Cutoff Curre nt VCE = 3 0 V, V OB = 3.0 V 50 nA
ON CHARACTERISTICS*
hFE DC Cu r rent G ain VCE = 1.0 V, IC = 0.1 mA
VCE = 1.0 V, IC = 1.0 mA
VCE = 1.0 V, IC = 1 0 mA
VCE = 1.0 V, IC = 5 0 mA
VCE = 1.0 V, IC = 1 00 m A
20
35
50
30
15
150
VCE(sat)Col lector-Emitter Saturation Vol tag e IC = 10 mA, IB = 1.0 mA
IC = 5 0 mA, IB = 5.0 mA 0.2
0.3 V
V
VBE(sat)B ase-Em i tter S aturat ion Volt ag e IC = 1 0 mA, IB = 1.0 mA
IC = 5 0 mA, IB = 5.0 mA 0.65 0.85
0.95 V
V
SMALL SIGNAL CHARACTERISTICS
Cob Output Capacita nce VCB = 5.0 V, f = 100 kHz 4.0 pF
Cib Input Capacitance VEB = 0.5 V, f = 100 kHz 8.0 pF
hfe Small-Signal Current Gain IC = 10 mA, VCE = 2 0 V,
f = 100 MHz 2.5
hfe Small-Signal Current Gain VCE = 1 0 V, IC = 1.0 mA 50 200
hie Input Impedance f = 1.0 kHz 1.0 8.0 k
hre Voltage Feedback Ratio 0.1 5.0 x 10-4
hoe O utput Admittance 1.0 40 µmhos
NF Noise Figure VCE = 5.0 V, IC = 1 00 µA,
RS = 1.0 k,
BW = 1 0 Hz to 15.7 kHz
6.0 dB
SWITCHING CHARACTERISTICS
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
tdDelay Time VCC = 3.0 V, IC = 1 0 mA, 35 ns
trRise Time IB1 = 1.0 mA , Vob ( of f ) = 0. 5 V 35 ns
tsStor age T i m e VCC = 3.0 V, IC = 1 0 mA 175 ns
tfFall Time IB1 = IB2 = 1.0 mA 50 ns
z
2N3903
Typical Characteristics
Base-E mi tter ON Voltage vs
Collector C u rren t
0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER ON VOLTAGE (V)
BE(ON)
C
V = 5V
CE
25 °C
125 °C
- 40 °C
NPN General Purpose Amplifier
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
0.1 1 10 100
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER VOLT AGE (V)
BESAT
C
β = 10
25 °C
125 °C
- 40 °C
Colle ctor-Em itter Sa turatio n
Vol t ag e vs Collect or Cu rrent
0.1 1 10 100
0.05
0.1
0.15
I - COLLECTOR CURRENT (mA)
V - COLLECTOR-EMITTER VOLTAGE (V)
CESAT
25 °C
C
β = 10
125 °C
- 40 °C
Collect or- Cut of f Curre nt
vs Ambient Temperature
25 50 75 100 125 150
0.1
1
10
100
500
T - AMBIENT TEMPERATURE ( C)
I - COLLECTOR CURRENT (nA)
A
V = 30V
CB
CBO
°
Capacitance vs
Reverse Bias Voltage
0.1 1 10 100
1
2
3
4
5
10
REVERSE BIAS VOLTAGE (V)
CAPACITANCE (pF)
Cobo
C
ibo
f = 1.0 MHz
Typi cal Pu lsed C urr ent Gai n
vs Col lector Cur ren t
0.1 1 10 100
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h - TYPICAL PULSED CURR EN T GA IN
FE
- 40 °C
25 °C
C
V = 5V
CE
125 °C
Power Dissipation vs
A mbient Temperature
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMPER ATURE ( C)
P - POWER DI SSI PATION (W )
D
o
SOT-223
SOT-23
TO-92
Typical Characteristics (continued)
Noise Figure vs Frequency
0.1 1 10 100
0
2
4
6
8
10
12
f - FREQUENCY (kHz)
NF - NOISE FIG URE (dB)
V = 5.0V
CE
I = 100 µA, R = 500
CS
I = 1.0 mA
R = 200
C
S
I = 50 µA
R = 1.0 k
C
S
I = 0.5 mA
R = 200
C
S
k
Noise Figure vs Source Resistance
0.1 1 10 100
0
2
4
6
8
10
12
R - SOURCE RESISTANCE ( )
NF - NOISE FIGURE (dB)
I = 100 µA
C
I = 1.0 mA
C
S
I = 50 µA
C
I = 5.0 mA
C
θ - DEGREES
0
40
60
80
100
120
140
160
20
180
Current Gain and Phase Angl e
vs Frequency
1 10 100 1000
0
5
10
15
20
25
30
35
40
45
50
f - FREQU ENCY (MH z)
h - CURRENT GAIN (dB)
θ
V = 40V
CE
I = 10 mA
C
hfe
fe
Turn-On Time vs Collector Curr en t
110100
5
10
100
500
I - COLLECTOR CURRENT (mA)
TIME (nS)
I = I =
B1
C
B2 Ic
10
40V
15V
2.0V
t @V = 0V
CB
d
t @V = 3.0V
CC
r
Rise Time vs Colle ctor Curr en t
1 10 100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t - RISE TIME (ns)
I = I =
B1
C
B2 Ic
10
T = 125°C
T = 25°C
J
V = 40V
CC
r
J
2N3903
NPN General Purpose Amplifier
(continued)
2N3903
NPN General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Storage Time vs Collector Current
1 10 100
5
10
100
500
I - COLLECTOR CURREN T (mA)
t - STORAGE TIME (ns)
I = I =
B1
C
B2 Ic
10
S
T = 125°C
T = 25°C
J
J
Fall Time vs Collector Current
1 10 100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t - FALL TIME (ns)
I = I =
B1
C
B2 Ic
10
V = 40V
CC
f
T = 125°C
T = 25°C
J
J
Cu rr ent Gain
0.1 1 10
10
100
500
I - COLLECTOR CURRENT (mA)
h - CURRENT GA IN
V = 10 V
CE
C
fe
f = 1 .0 kHz
T = 25 C
A o
Output Admi tta n c e
0.1 1 10
1
10
100
I - COLLECTOR CURRENT (mA)
h - OU TPUT ADMITT ANCE ( mh os)
V = 10 V
CE
C
oe
f = 1.0 kHz
T = 25 C
A o
µ
Inpu t Imp e dan c e
0.1 1 10
0.1
1
10
100
I - CO LLE CTOR CURRENT (mA)
h - I NPU T IMPEDANCE (k )
V = 10 V
CE
C
ie
f = 1.0 kHz
T = 25 C
A o
Voltage Feedback Ratio
0.1 1 10
1
2
3
4
5
7
10
I - COL LECTOR CURRE NT (m A)
h - VOLTAGE F EED BACK RATI O (x 1 0 )
V = 10 V
CE
C
re
f = 1.0 kHz
T = 25 C
A o
_4
Test Circuits
10 K
3.0 V
275
t1
C1 <<
<<
< 4.0 pF
Duty Cycle ==
==
= 2%
Duty Cycle ==
==
= 2%
<<
<<
< 1.0 ns
- 0.5 V
300 ns 10.6 V
10 < <
< <
< t1 <<
<<
< 500 µµ
µµ
µs 10.9 V
- 9.1 V
<<
<<
< 1.0 ns
0
0
10 K
3.0 V
275
C1 <<
<<
< 4.0 pF
1N916
FIGURE 2: Storage and Fall Time Equivalent Test Circuit
FIGURE 1: Delay and Rise Time Equivalent Test Circuit
2N3903
NPN General Purpose Amplifier
(continued)
TO-92 Tape and Reel Data
March 2001, Rev. B1
©2001 Fairchild Semiconductor Corporation
TO-92 Packaging
Configuration: Figure 1.0
AMMO PACK OPTION
See Fig 3.0 for 2 Ammo
Pack Options
2000 units per
EO70 box for
std option
FSCINT Label
530mm x 130m m x
83mm
Inter med iate box
10,000 units maximum
per
intermediate box
for std option
FSCINT Label
114mm x 102m m x 51mm
Immed iate Box
Anti-static
Bubble Sheets
(TO-92) BULK PACKING INFORMATION
EOL
CODE DESCRIPTION LEADCLIP
DIMENSION QUANTITY
J18Z TO-18 OPTION STD NO LEAD CLIP 2.0 K / BOX
J05Z TO-5 OPTIO N STD NO LEAD CLIP 1.5 K / BOX
NO EOL
CODE TO-92 STANDARD
STRAIGHT FOR: PKG 92, NO LEADCLIP 2.0 K / BOX
BULK OPTION
See Bulk Packing
Information tabl e
375mm x 267m m x 375mm
Inter med iate Box
FSCINT
Label
Customized
Label
333mm x 231m m x 183mm
Inter med iate Box
FSCINT
Label
Customized
Label
TO-92 TNR/AMMO PACKING INFROMATION
Pack ing Style Q u antity EOL code
Reel A 2,000 D26Z
E2,000 D27Z
Ammo M 2,000 D74Z
P2,000 D75Z
U nit weight = 0.22 gm
Reel weight w ith com pone nts = 1.04 kg
Ammo weig ht with components = 1 .0 2 kg
Max quantity per interme d iate box = 10,000 units
F63TNR
Label
5 Ammo boxes per
Inter med iate Box
Customized
Label
327mm x 158m m x 135mm
Immed iate Box
LOT:
CBVK741B019
NSID:
PN2222N
D/C1:
D9842
SPEC REV:
B2
SPEC:
QTY:
10000
QA REV:
FAIRCHILD SEMICONDUCTOR CORPORATION
HTB:B
(FSCINT)
F63TNR
Label
Customized
Label
5 Reels per
Inter med iate Box
TAPE and REEL OPTION
See Fig 2.0 for various
Reeling Styles
LOT: CBVK74 1B019
FS ID: PN 2 22N
D/C1: D9842 QTY1: SPEC REV:
SPEC:
QTY: 2000
D/C2: QTY2: CPN: N/F: F (F6 3TNR) 3
F63TNR Label sample
FSCINT Label sample
C
5 EO70 boxes per
intermediate Box
ustomized
Label
94 (NON PROELECTRON
SERIES), 96
L34Z TO-92 STANDARD
STRAIGHT FOR: PKG 94 NO LEADCLIP 2.0 K / BOX
(PROELECTRON SERIES
BCXXX, BFXXX, BSRXXX),
97, 98
TO-92 Tape and Reel Data, continued
September 1999, Rev. B
TO-92 Reeling Style
Configuration: Figure 2.0
Style “A”, D26Z, D70 Z (s/h)
Machine Op tion “A” (H)
Style “E ”, D2 7Z, D 71Z (s/ h)
Machine O ption “E” (J)
FIRST WIRE OFF IS EMITTER
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
ORDER STYLE
D75Z (P)
FIRST WIRE OFF IS COLLECTOR
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON TOP
ORDER STYLE
D74Z (M)
TO-92 Radial Ammo Packaging
Configuration: Figure 3.0
FIRST WIRE OFF IS EMITTER (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
FIRST WIRE OFF IS COLLECTOR (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON TOP
ITEM DESCRIPTION
Base of Package to Lead Bend
Com p on en t Heig ht
Lead C linch H eight
Com p on en t Ba s e He ig ht
Com p on en t Al ig nm e nt ( sid e/s id e )
Com p on en t Al ig nm e nt ( front/bac k )
Com p on en t Pitc h
Feed Hole Pitch
Hole Center to First Lead
Hole Center to Component Center
Lead Spread
Lead Thickness
Cut Lead Length
Taped Lead Length
Taped Lead Thickness
Carrier Tape Thickness
Carrier Tape Width
Hold - down Tape Width
Hold - down Tape position
Feed Hole Position
Sprocket Hole Diameter
Lead Spring Out
SYMBOL
b
Ha
HO
H1
Pd
Hd
P
PO
P1
P2
F1/F2
d
L
L1
t
t1
W
WO
W1
W2
DO
S
DIMENSION
0. 09 8 (m ax )
0. 92 8 (+ /- 0.025)
0. 63 0 (+ /- 0.020)
0. 74 8 (+ /- 0.020)
0. 04 0 (m ax )
0. 03 1 (m ax )
0. 50 0 (+ /- 0.020)
0. 50 0 (+ /- 0.008)
0. 15 0 (+ 0 .00 9, -0. 0 10 )
0. 24 7 (+ /- 0.007)
0. 10 4 (+ /- 0 . 01 0)
0. 01 8 (+ 0 .00 2, -0. 0 03 )
0. 42 9 (m ax )
0. 20 9 (+ 0 .05 1, -0. 0 52 )
0. 03 2 (+ /- 0.006)
0. 02 1 (+ /- 0.006)
0. 70 8 (+ 0 .02 0, -0. 0 19 )
0. 23 6 (+ /- 0.012)
0. 03 5 (m ax )
0. 36 0 (+ /- 0.025)
0. 15 7 (+ 0 .00 8, -0. 0 07 )
0. 00 4 (m ax )
Note : All dim ensions are in inches.
ITEM DESCRIPTION SYSMBOL MINIMUM MAXIMUM
Ree l Di am e ter D1 13 . 9 75 14. 02 5
Arb or Hol e Di am et er (S ta nd ard) D2 1.160 1. 2 00
(Small Hole) D2 0.650 0.700
Core Diameter D3 3.100 3.300
Hub Rec ess Inner Diameter D4 2.700 3.100
Hub Recess Depth W1 0.370 0.570
Flange to Flange Inner W i dth W2 1.630 1.690
Hub to Hub Center Width W 3 2.090
Note: All dimensions are inches
TO-92 Tape and Reel Taping
Dimension Configuratio n: Figure 4.0
Ha
H1 HO
PO
P2
P1 F1
DO
P Pd
b
d
L1
LS
WO W2
W
t
t1
Hd
W1
TO-92 Reel
Configuration: Figure 5.0
User D ire c tion of Feed
SENSI TIV E DE VIC ES
ELECTROSTATIC
D1
D3
Cust omized Label
W2
W1 W3
F63 TNR Label
D4
D2
TO-92 Tape and Reel Data, continued
July 1999, Rev. A
TO-92 (FS PKG Code 92, 94, 96)
TO-92 Package Dimensions
January 2000, Rev. B
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.1977
©2000 Fairchild Semiconductor International
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF F AIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN T O IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS P ATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART ST ART™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Rev . G
ACEx™
Bottomless™
CoolFET™
CROSSVOLT
DOME™
E2CMOSTM
EnSignaTM
FACT™
F ACT Quiet Series™
FAST
SyncFET™
TinyLogic™
UHC™
VCX™