G E SOLID STATE OL DE i 3875081 GoOLa714 4 i Optoelectronic Specifications T-4l-37 Photon Coupled Isolator H11C1,H11C2,H11C3 Ga As Infrared Emitting Diode & Light Activated SCR URLMSTERE ie Twa NOTES The GE Solid State H11C1, HI1C2 and H11C3 are gallium arsenide, a ne infrared emitting diodes coupled with light activated silicon con- $ Lote 88, ote | BOY? trolled rectifiers in a dual in-line package, These devices are also By j 808 an | 243 available in Surface-Mount packaging. & {220 280. 00 tig ; H - 26, = | 4 absolute maximum ratings: (25C) i | a: Sis] oe) INFRARED EMITTING DIODE wf anf | oe) S, Power Dissipation *100 milliwatts # oR | ae | uo 20 Forward Current (Continuous) 60 milliamps ve ; fr NOTES vans Forward Current (Peak) 3 ampere c_ rr |. NBTALLED FOSITION LEAD CENTE (Pulse width 1 psec 300 P Pa) 4. SESE REASUREMENTS ARE MADE FROM THE SEAT . Reverse vee 1,33 mW/C above 25C ambient volte rounnace PHOTO-SCR TOTAL DEVICE Peak Forward Voltage 200 volts Storage Temperature -55 to 150C RMS Forward Current 300 milliamps Operating Temperature -55 to 100C Forward Current (Peak) 10 amperes Lead Soldering Time (at 260C) 10 seconds (100psec 1% duty cycle) Surge Isolation Voltage (Input to Output). Surge Current (10m sec) 5 amperes H11C1 $656Vieay AM] Reverse Gate Voltage 6 volts H11C2-H11C3 3535V, 2500V Power Dissipation (25C Ambient) ** 400 milliwatts ve Ms) . Steady-State Isolation Voltage (Input to Output). Power Dissipation (25C Case) ***1000 milliwatts **Derate 5,3mW/C above 25C ambient. H1ICi = 5300Viun 3750V ams) ***Derate 13,3mW/C above 25C case, H11C2-Hi1C3 3180Vieay 2250Viams) individual electrical characteristics (25C) INFRARED EMITTING DIODE | typ, | Max, | UNITS PHOTO-SCR MIN.| TYP.IMAX,| UNITS Forward Voltage Ve 1.2 | 1.5 | volts Off-State Voltage Vpm (Rox {200} | | volts (ly = 10mA) = 10KQ, 100C,Ip = 504A) Reverse Voltage Vpy (Rox |200] | jvolts = 10KQ, 100C, Ip = 5QuA) Reverse Current In _ 10 | microamps Oe sae Vm ~ | 1.1 | 1.3 | volts (Va =3V) ate Current Off-state Current Ipm (Vp =| | | 50 |microamps 200V, T, = 100C, Rox = 10K) Reverse Current Igw (Vaq =| | | 50 |microamps 200V, T, = 100C, Ray = 10K) Capacitance Cy 50 | picofarads Capacitance (Anode-Gate) | 20] |picofarads (V =0,f = 1MHz) V=0V,f= 1MHz(Gate-Cathode) |350] |picofarads coupled electrical characteristics (25C) MIN, | TYP. | MAX. UNITS Input Current to Trigger (Vax = SOV, Rex = 10KQ) H11C1, C2 - - 20 milliamps H11C3 - - 30 milliamps Input Current to Trigger (Vax = 100V, Rex = 27KM) H11C1,C2 - - 1] milliamps Hi1C3 ~ - 14 milliamps Isolation Resistance (Input to Output Voltage = 500Vpc) 100 - - pigaohms Input to Output Capacitance (Input to Output Voltage = O,f = 1MHz) - ~ 2 picofarads Coupled dV/dt, Input to Output (See Figure 13) 500 - - volts/usec * Covered under U.L. component recognition program, reference file E51868 VDE Approved to 0883/6.80 01106 Certificate # 35025 238~G E SOLID STATE | OL De f)ss7soa1 cowzis o &f H11C1, H11C2, H11C3 Optoelectronic Specifications TF TYPICAL CHARACTERISTICS NORMALIZED INPUT CURRENT TO TRIGGER Tpy NORMALIZED INPUT CURRENT TO TRIGGER ter 1 s to 0 mo 200 van s50 Nay ANODE TO CATHODE VOLTAGE -VOLTS: Rgkt 10K seaee FIGURE 1, INPUT CURRENT TO TRIGGER 60 ta ohaueer Tee z a E , VS ANODE-CATHODE VOLTAG FIGURE 2. INPUT CURRENT TO TRIGGER VS TEMPERATURE Tpp"NORMALIZED INPUT CURRENT TO TRIGGER: Ip NORMALIZED INPUT CURRENT TO TRIGGER PULSE WIDTH= MICRO SECORUS FIGURE 4. INPUT CURRENT TO TRIGGER VS PULSE WIDTH Tg7 AMBIENT TEMPERATURE-C FIGURE 3, INPUT CURRENT TO TRIGGER DISTRIBUTION VS TEMPERATURE 3 Vans SOVOLTS fon stg tir ty oat paae Ig- FORWARD CURRENT- mA Ve- VOLTS Vp~ FORWARD VOLTAGE - VOLTS 70 Tp -18FUT CURRENT ~ MILLIANPERES FIGURE 6. INPUT CHARACTERISTI FIGURE 5. TURN ON TIME VS INPUT CURRENT lp VS Ve 239GE SOLID STATE OL De sa7soar ooze 2 & Optoelectronic Specifications H11C1, H11C2, H11C3 T4187 TYPICAL CHARACTERISTICS OF OUTPUT (SCR} WILEAD TEMPERATURE MEASURED AT THE WIDEST PORTION OF THE SCA ANODE LEAD (2)aMBENT TEMPERATURE MEASURED AT & PONT V2" FROM THE OEVICE TRANSIENT THERDEAL, IMPEDANCE =F PER WATT 9008, 0004 acl coz a4 Of O02 O4 ' a 19 20 40 KO 2 ooo TIME-SECONOS g 5 z g & L 6 z 3 2 a 2 = 1 age 50 FIGURE 8. MAXIMUM TRANSIENT THERMAL Ty ~AWE.ENT TEMPERATURE-*C IMPEDANCE FIGURE 7. HOLDING CURRENT VS TEMPERATURE NORMALIZED TO Vag S50 Ty 225 LEAD TEMP CURRENT N\ N MAXIMUM ALLOWABLE TEMPERATURE C aM LEAD TEMP OC CURRENT ue WAVE AVERAGE Ty NORMALIZED FORWARD CURRENT, OFF STATE ON STATE CURRENT - AMPERES FIGURE 10. ON STATE CURRENT VS MAXIMUM ALLOWABLE TEMPERATURE Ty AMBIENT TEMPERATURE $C FIGURE 9. OFF STATE FORWARD CURRENT VS TEMPERATURE JUNCTION TEMPERATURE + 25* Ly -ON-STATE CURRENT ~ AMPERES TO 8Vfq CRITICAL, RATE. OF RISE APPLIED FORWARD VOLTAGE ~ Volla/y ac oO 10 20 40 a0 Vy7ON-STATE VOLTAGE -vous: TEMPERATURES FIGURE 12. ONSTATE FIGURE 11, dV/q; VS TEMPERATURE CHARACTERISTICS 240G E SOLID STATE o1 Def 387so81 OOLI?L? 4 1 H11C1, H11C2, H11C3 Optoelectronic Speciticauons : 4/82 TYPICAL APPLICATIONS 10A, T2L COMPATABLE, SOLID STATE RELAY p}|_ LOAD 470.4. 100 1. 47 Use of the HIICI for high sensitivity, 2500 v isolation capability, provides this highly reliable solid state relay design. This design is compatable AR OlmF contact 120VAC with 74, 74S and 74H series TL logic systems scM46B inputs and 120VAC loads up to 10 A. insoeo (4) 47 INDICATOR LAMP 26W LOGIC INDICATOR LAMP DRIVER The high surge capability and non-reactive input characteristics on) of the H11C allow it to directly couple, without buffers, T2L 100.1 and DTL logic to indicator and alarm devices, without danger LL I2ZOVAC of introducing noise and logic glitches. 0.1 uF _ 200V SYMMETRICAL TRANSISTOR COUPLER Use of the high voltage PNP portion of the H11C provides a 200V transistor capable of conducting positive and negative signals with current transfer ratios of over 1%. This function is useful in remote instrumentation, high voltage power supplys and test equipment. Care should be taken not to exceed the H11C 400 mW power dissipation rating when used at high voltages. FIGURE 13 COUPLED dV/dt TEST CIRCUIT Vp = 800 Volts to =,010 Seconds f = 25 Hertz +100 VAC TA =259C 1002 i HIICI + ry "> > i H | LXER NO 9% lok [e. EXPONENTIAL . OSCILLOSCOPE RAMP GEN. 241