DSEI 120 Fast Recovery Epitaxial Diode (FRED) VRSM V 1200 VRRM C A Type IFAVM = 109 A VRRM = 1200 V trr = 40 ns TO-247 AD V 1200 C DSEI 120-12A A C A = Anode, C = Cathode Symbol Test Conditions Maximum Ratings IFRMS IFAVM yy IFAV IFRM TVJ = TVJM TC = 60C; rectangular, d = 0.5 TC = 95C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM 100 109 75 tbd A A A A IFSM TVJ = 45C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 600 660 A A TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 540 600 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1800 1800 A2s A2s TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1450 1500 A2s A2s -40...+150 150 -40...+150 C C C 357 W Features I2t TVJ = 45C TVJ TVJM Tstg Ptot TC = 25C Md Mounting torque Applications 0.8...1.2 Weight 6 Nm g Symbol Test Conditions IR TVJ = 25C TVJ = 25C TVJ = 125C VR = VRRM VR = 0.8 * VRRM VR = 0.8 * VRRM VF IF = 70 A; TVJ = 150C TVJ = 25C VT0 rT For power-loss calculations only TVJ = TVJM International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Characteristic Values typ. max. Advantages 3 1.5 20 mA mA mA 1.55 1.8 V V 1.2 4.6 V mW 0.35 35 K/W K/W K/W RthJC RthCK RthJA 0.25 trr IF = 1 A; -di/dt = 200 A/ms; VR = 30 V; TVJ = 25C 40 60 ns IRM VR = 350 V; IF = 75 A; -diF/dt = 200 A/ms L 0.05 mH; TVJ = 100C 25 30 A High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Operating at lower temperature or space saving by reduced cooling Dimensions See DSEI 60-12 on page D5 - 27 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions (c) 2000 IXYS All rights reserved 009 Chip capability, limited to 70 A by leads 1-2 http://store.iiic.cc/ DSEI 120, 1200 V 16 T = 100C VJ C V = 600V 14 R 150 A 125 IF 120 TVJ= 100C A VR = 600V 100 IRM Qr 12 100 IF=140A IF= 70A IF= 35A 10 TVJ=150C 80 8 75 TVJ=100C 60 6 50 TVJ= 25C 40 4 25 20 2 0 0.0 0.5 IF=140A IF= 70A IF= 35A 1.0 0 100 1.5 V 2.0 VF Fig. 1 Forward current IF versus VF A/ms 1000 -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt 500 1.4 450 1.2 ms 1000 600 A/ 800 -diF/dt 1.5 TVJ= 100C IF = 100A 50 VFR 400 40 350 30 IRM IF=140A IF= 70A IF= 35A 300 s tfr 1.0 tfr 0.8 VFR 0.5 20 Qr 0.6 10 250 0.4 200 0 40 80 120 C 160 0 200 400 TVJ Fig. 4 Dynamic parameters Qr, IRM versus TVJ 600 A/ 800 ms 1000 -diF/dt Fig. 5 Recovery time trr versus -diF/dt 1 K/W 0 0 200 400 600 800 diF/dt 0.0 1000 A/ms Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 4 D=0.7 0.5 0.1 400 Fig. 3 Peak reverse current IRM versus -diF/dt 1.0 ZthJC 200 V trr Kf 0 60 TVJ= 100C VR = 600V ns 0 0.3 0.2 Rthi (K/W) ti (s) 0.017 0.0184 0.1296 0.185 0.00038 0.0026 0.0387 0.274 0.01 0.05 Single Pulse 0.01 0.001 DSEI 120-12 0.01 0.1 1s 10 t Fig. 7 Transient thermal resistance junction to case (c) 2000 IXYS All rights reserved 2-2 http://store.iiic.cc/