© 2000 IXYS All rights reserved 1 - 2
VRSM VRRM Type
V V
1200 1200 DSEI 120-12A
Symbol Test Conditions Maximum Ratings
IFRMS TVJ = TVJM 100 A
IFAVM
ÿÿ
①TC = 60°C; rectangular, d = 0.5 109 A
IFAV ② TC = 95°C; rectangular, d = 0.5 75 A
IFRM tP < 10 ms; rep. rating, pulse width limited by TVJM tbd A
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 600 A
t = 8.3 ms(60 Hz), sine 660 A
TVJ = 150°C; t = 10 ms (50 Hz), sine 540 A
t = 8.3 ms(60 Hz), sine 600 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 1800 A2s
t = 8.3 ms(60 Hz), sine 1800 A2s
TVJ = 150°C; t = 10 ms (50 Hz), sine 1450 A2s
t = 8.3 ms(60 Hz), sine 1500 A2s
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+150 °C
Ptot TC = 25°C 357 W
MdMounting torque 0.8...1.2 Nm
Weight 6g
Symbol Test Conditions Characteristic Values
typ. max.
IRTVJ = 25°CV
R= VRRM 3mA
TVJ = 25°CV
R= 0.8 • VRRM 1.5 mA
TVJ = 125°CV
R= 0.8 • VRRM 20 mA
VFIF = 70 A; TVJ =150°C 1.55 V
TVJ =25°C 1.8 V
VT0 For power-loss calculations only 1.2 V
rTTVJ = TVJM 4.6 mW
RthJC 0.35 K/W
RthCK 0.25 K/W
RthJA 35 K/W
trr IF = 1 A; -di/dt = 200 A/ms; VR = 30 V; TVJ = 25 °C40 60 ns
IRM VR = 350 V; IF = 75 A; -diF/dt = 200 A/ms2530A
L £ 0.05 mH; TVJ = 100°C
DSEI 120 IFAVM = 109 A
VRRM = 1200 V
trr = 40 ns
① Chip capability, ② limited to 70 A by leads
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
C
Features
●International standard package
JEDEC TO-247 AD
●Planar passivated chips
●Very short recovery time
●Extremely low switching losses
●Low IRM-values
●Soft recovery behaviour
●Epoxy meets UL 94V-0
Applications
●Antiparallel diode for high frequency
switching devices
●Anti saturation diode
●Snubber diode
●Free wheeling diode in converters
and motor control circuits
●Rectifiers in switch mode power
supplies (SMPS)
●Inductive heating and melting
●Uninterruptible power supplies (UPS)
●Ultrasonic cleaners and welders
Advantages
●High reliability circuit operation
●Low voltage peaks for reduced
protection circuits
●Low noise switching
●Low losses
●Operating at lower temperature or
space saving by reduced cooling
Dimensions
See DSEI 60-12 on page D5 - 27
Fast Recovery
Epitaxial Diode (FRED)
ATO-247 AD
C
C
A
A = Anode, C = Cathode
009
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© 2000 IXYS All rights reserved 2 - 2
DSEI 120, 1200 V
200 600 10000 400 800
200
250
300
350
400
450
500
0.001 0.01 0.1 1 10
0.01
0.1
1
0 40 80 120 160
0.4
0.6
0.8
1.0
1.2
1.4
Kf
TVJ
°C-diF/dt
t
s
K/W
0 200 400 600 800 1000
10
30
50
0
20
40
60
0.0
0.5
1.0
1.5
VFR
diF/dt
V
200 600 10000 400 800
20
60
100
0
40
80
120
100 1000
0
2
4
6
8
10
12
14
16
0.0 0.5 1.0 1.5 2.0
0
25
50
75
100
125
150
IRM
Qr
IF
A
VF-diF/dt -diF/dt
A/
m
s
A
V
µC
A/
m
sA/
m
s
trr
ns
tfr
ZthJC
A/
m
s
µs
0.05
0.3
0.5
D=0.7
0.2
0.01
DSEI 120-12
Single Pulse
IF=140A
IF= 70A
IF= 35A
TVJ= 100°C
VR = 600V TVJ= 100°C
IF = 100A
Fig. 3 Peak reverse current IRM
versus -diF/dt
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
Fig. 1 Forward current IF versus VF
TVJ=100°C
TVJ=150°C
TVJ= 100°C
VR = 600V TVJ= 100°C
VR = 600V
IF=140A
IF= 70A
IF= 35A
Qr
IRM
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
IF=140A
IF= 70A
IF= 35A
tfr VFR
Fig. 7 Transient thermal resistance junction to case
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.017 0.00038
2 0.0184 0.0026
3 0.1296 0.0387
4 0.185 0.274
TVJ= 25°C
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