SKB B...C1500L5B O4 400 126 SKB 8600 1B00L56 2200 1,1 80D 260 SKB BZ50C1600L55 1000 2,6 1000 SB0 SKB B360C1600L55 700 4 1200 600 SKB BRODC1E00LE5 B00 5 ly T, 746C, no 16 A Inset Ty 59C, isolated"! 1,6 A Fou Ty 26C, 10 mz BO A Ty = 160 C, 10 ms 70 A m Ty 7 26C. 8.9... 10 ms a2 ARs Ty 160C, 6,5 100ms 24,6 ARs Ve Ty 7 26C, I= 104 max. 7,6 v Neo) fur oa x Ld = leap Ty 26C, Vegan * 120 V 20 uA. Ty 28C. Vig Vinny 2 400 V 6 uA. leap Ty TH0"C. Veg" Vine T2OW 1 mi Ty 180C. Vapm Vine 2 400 0.6 mi ty Ty 7 26C 10 ps fa 2000 Hz Raga isolated) Kaw Ti -40 + 150 c Tog - 6B. + 160 c m Z g Fu z A Core Ge Fee | by SEMIKRONSKB B...C1500L5B SHE B.S T_T SKE B..C 1500 Fig. 1 Rated output current vs. ambient temperature om Ta Sti 0 a 2an EXD BG Mem TEELS 4 wi SKB B..0 1500 Py a o |b a5 1 15 A 2 Fig. 2 Power dissipation vs. oulput current 1000 SKB B..C 1500 1 100 10 0,1 t 0,01 o1 'e i A Fig. 6 Rated overnoad Charatte9tsiice rs. ime SKE BOS Ph 2aLS 10 a Fe ead BER ALG a el ee 5 4 | SKB B.C 1500 2,0 16 1,0 0,6 IF 0,0 oo e 0.5 1,0 VoL Fig. 3 Forward Characbertstics of a ioe ami by SEMIKRONSKB B...C1500L5B Dimensions In mm 3k = = rer oy] This technical information specifies semiconductor devices but promises mo characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 3 Of-04-2004 SCT by SEMIKRON