2N6034 2N6035 2N6036 PNP
2N6037 2N6038 2N6039 NPN
COMPLEMENTARY SILICON
DARLINGTON POWER
TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6034, 2N6037
series devices are complementary silicon Darlington
power transistors, manufactured by the epitaxial base
process, designed for general purpose amplifier and
switching applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C unless otherwise noted) 2N6034 2N6035 2N6036
SYMBOL 2N6037 2N6038 2N6039 UNITS
Collector-Base Voltage VCBO 40 60 80 V
Collector-Emitter Voltage VCEO 40 60 80 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 4.0 A
Peak Collector Current ICM 8.0 A
Continuous Base Current IB 100 mA
Power Dissipation PD 40 W
Power Dissipation (TA=25°C) PD 1.5 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 83.3 °C/W
Thermal Resistance ΘJC 3.12 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=Rated VCBO 500 μA
ICEV V
CE=Rated VCEO, VBE=1.5V 100 μA
ICEV V
CE=Rated VCEO, VBE=1.5V, TC=125°C 500 μA
ICEO V
CE=Rated VCEO 100 μA
IEBO V
EB=5.0V 2.0 mA
BVCEO I
C=100mA (2N6034, 2N6037) 40 V
BVCEO I
C=100mA (2N6035, 2N6038) 60 V
BVCEO I
C=100mA (2N6036, 2N6039) 80 V
VCE(SAT) I
C=2.0A, IB=8.0mA 2.0 V
VCE(SAT) I
C=4.0A, IB=40mA 3.0 V
VBE(SAT) I
C=4.0A, IB=40mA 4.0 V
VBE(ON) V
CE=3.0V, IC=2.0A 2.8 V
hFE V
CE=3.0V, IC=500mA 500
hFE V
CE=3.0V, IC=2.0A 750 15K
hFE V
CE=3.0V, IC=4.0A 100
fT V
CE=10V, IC=750mA, f=1.0MHz 25 MHz
Cob V
CB=10V, IE=0, f=100kHz (PNP) 200 pF
Cob V
CB=10V, IE=0, f=100kHz (NPN) 100 pF
TO-126 CASE
R1 (12-March 2014)
www.centralsemi.com
2N6034 2N6035 2N6036 PNP
2N6037 2N6038 2N6039 NPN
COMPLEMENTARY SILICON
DARLINGTON POWER
TRANSISTORS
LEAD CODE:
1) Emitter
2) Collector
3) Base
MARKING:
FULL PART NUMBER
TO-126 CASE - MECHANICAL OUTLINE
www.centralsemi.com
R1 (12-March 2014)
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