Copyright 2002 Semicoa Semiconductors, Inc.
Rev. D 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
www.SEMICOA.com
2N6987
Silicon PNP Transisto
r
Data Sheet
Description
Complement to the 2N6989
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N6987J)
• JANTX level (2N6987JX)
• JANTXV level (2N6987JV)
• JANS level (2N6987JS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
• Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
• General purpose switching
• 4 Transistor Array
• PNP silicon transistor
Features
• Hermetically sealed Cerdip ceramic
• Also available in chip configuration
• Chip geometry 0600
• Reference document:
MIL-PRF-19500/558
Benefits
• Qualification Levels: JAN, JANTX,
JANTXV and JANS
• Radiation testing available
Absolute Maximum Ratings TC = 25°C unless otherwise specified
Parameter Symbol Rating Unit
Collector-Emitter Voltage VCEO 60
Volts
Collector-Base Voltage VCBO 60
Volts
Emitter-Base Voltage VEBO 5
Volts
Collector Current, Continuous IC 600
mA
Power Dissipation, TA = 25OC
Derate linearly above 25OC PT 1.5
8.57
W
mW/°C
Operating Junction Temperature TJ -65 to +200 °C
Storage Temperature TSTG -65 to +200 °C
Copyright 2002 Semicoa Semiconductors, Inc.
Rev. D 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com
2N6987
Silicon PNP Transisto
r
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Collector-Emitter Breakdown Voltage V(BR)CEO I
C = 10 mA 60 Volts
Collector-Base Cutoff Current ICBO1
ICBO2
VCB = 60 Volts
VCB = 50 Volts
10
10
µA
nA
Collector-Base Cutoff Current ICBO3 VCB = 50 Volts, TA = 150°C 10
µA
Emitter-Base Cutoff Current IEBO1
IEBO2
VEB = 5 Volts
VEB = 4 Volts
10
50
µA
nA
On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter Symbol Test Conditions Min Typ Max Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
hFE5
hFE6
IC = 0.1 mA, VCE = 10 Volts
IC = 1.0 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts
IC = 150 mA, VCE = 10 Volts
IC = 500 mA, VCE = 10 Volts
IC = 1.0 mA, VCE = 10 Volts
TA = -55°C
75
100
100
100
50
50
450
300
Base-Emitter Saturation Voltage VBEsat1
VBEsat2
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
1.3
2.6 Volts
Collector-Emitter Saturation Voltage VCEsat1
VCEsat2
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.4
1.6 Volts
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio |hFE| VCE = 20 Volts, IC = 20 mA,
f = 100 MHz 2
Small Signal Short Circuit Forward
Current Transfer Ratio hFE VCE = 10 Volts, IC = 1 mA,
f = 1 kHz 100
Open Circuit Output Capacitance COBO VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz 8
pF
Open Circuit Input Capacitance CIBO VEB = 2 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz 30
pF
Transistor to Transistor Resistance |RT-T| |VT-T| = 500 Volts 1010 Ω
Switching Characteristics
Saturated Turn-On Time tON 45 ns
Saturated Turn-Off Time tOFF 300 ns
