Electrical Characteristics (TA= 25°C unless otherwise noted)
Symbol Min. TYP. Max. Unit
DC Current Gain(1)
at VCE = 10V, IC= 100µAh
FE 50–––
at VCE = 1V, I C= 10mA hFE 120 – – –
at VCE = 1V, IC= 100mA hFE 160 250 400 –
at VCE = 2V, IC= 500mA hFE 60–––
Collector-Emitter Saturation Voltage(1)
at IC= 100mA, IB= 10mA VCEsat – – 0.3 V
at IC= 500mA, IB= 50mA VCEsat – – 0.7 V
Base-Emitter Saturation Voltage(1)
at IC= 100mA, IB= 10mA VBEsat – – 1.25 V
at IC= 500mA, IB= 50mA VBEsat ––2V
Collector-Emitter Breakdown Voltage
at IC= 10mA, IB= 0 V(BR)CEO 45 – – V
Collector-Base Breakdown Voltage
at IC= 10µA, IB= 0 V(BR)CBO 60 – – V
Emitter-Base Breakdown Voltage
at IE= 10µA, at IC= 0 V(BR)EBO 5––V
Collector-Base Cut-off Current
at VCB = 45V, IE= 0 ICBO – – 20 nA
at VCB = 45V, IE= 0, TA= 150°C ICBO ––20µA
Emitter-Base Cut-off Current
at VEB = 4V, IC= 0 IEBO – – 20 nA
Gain-Bandwidth Product
at VCE = 5V, IC= 50mA, f = 20MHZ
fT– 200 – MHz
Collector-Base Capacitance
at VCB = 10V, f = 1MHz CCB –6–pF
Emitter-Base Capacitance
at VEB = 0.5V, f = 1MHz CEB –60–pF
Note: (1) Pulse test: t ≤300µs, D = 2%
MCC
BCW68G
Revision: B 2013/01/01
TM
Micro Commercial Components
www.mccsemi.com
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