SZP-3026Z - N/A - Datasheet.Directory

The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions.

Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without

notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product

for use in life-support devices and/or systems.

303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com

1EDS-104666 Rev B

Preliminary

Sirenza Microdevices’ SZP-3026Z is a high linearity single

stage class AB Heterojunction Bipolar Transistor (HBT)

amplifier housed in a proprietary surface-mountable plastic

encapsulated package. This HBT amplifier is made with

InGaP on GaAs device technology and fabricated with

MOCVD for an ideal combination of low cost and high reli-

ability.

This product is specifically designed as a flexible final or

driver stage for 802.16 equipment in the 2.7-3.8GHz bands.

It can run from a 3V to 6V supply. It is prematched to ~5

ohms on the input for broadband performance and ease of

matching at the board level. It features an output power

detector, on/off power control, ESD protection, excellent

overall robustness and a proprietary hand reworkable and

thermally enhanced SOF-26 package. This product fea-

tures a RoHS Compliant and Green package with matte tin

finish, designated by the ‘Z’ suffix.

Key Specifications

Symbol Parameters: Test Conditions, 3.4-3.6GHz App circuit,

Z0 = 50Ω, VCC = 5.0V, Iq = 460mA, TBP = 30ºC Unit Min. Typ. Max.

fOFrequency of Operation MHz 2700 3800

P1dB Output Power at 1dB Compression – 3.5GHz dBm 32.0 33.5

S21 Small Signal Gain – 3.5GHz dB 10.3 11.8

Pout Output power at 2.5% EVM 802.11g 54Mb/s - 3.5GHz dBm 26.0

IM3 Third Order Suppression (Pout=23dBm per tone) - 3.5GHz dBc -44 -41

NF Noise Figure at 3.5GHz dB 5.9

IRL Worst Case Input Return Loss 3.4-3.6GHz dB 10 14

ORL Worst Case Output Return Loss 3.4-3.6GHz 6 9

Vdet Range Output Voltage Range for Pout=10dBm to 33dBm V0.9 to 2.2

Icq Quiescent Current (Vcc = 5V) mA 415 460 510

IVPC Power Up Control Current (Vpc=5V) mA 2.3

Ileak Vcc Leakage Current (Vcc = 5V, Vpc = 0V) µA10

Rth, j-l Thermal Resistance (junction - lead) ºC/W 12

Functional Block Diagram

SZP-3026Z

2.7-3.8GHz 2W InGaP Amplifier

Product Features

Applications

•P1dB = 33.5dBm @ 5V

•802.11g 54Mb/s Class AB Performance

Pout = 26dBm @ 2.5% EVM, Vcc 5V, 570mA

Pout = 27dBm @ 2.5% EVM, Vcc 6V, 590mA

•On-chip Output Power Detector

•Input Prematched to ~5 ohms

•Proprietary Low Thermal Resistance Package

Hand Solderable and Easy Rework

•Power up/down control < 1µs

•802.16 WiMAX Driver or Output Stage

•WLL

Product Description

Proprietary SOF-26 Package

Active

Bias

RFIN RFOUT

Power

Detector

Vbias = 5V

Power

Up/Down

Control

Vcc = 5V

SZP-3026

RoHS Compliant

& PackageGreen

303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com

2EDS-104666 Rev B

Preliminary

SZP-3026Z 2.7-3.8GHz 2W Power Amp

Absolute Maximum Ratings

Parameters Value Unit

VC1 Collector Bias Current (IVC1)1500 mA

Device Voltage (Vcc)7.0 V

Power Dissipation 6W

Operating Lead Temperature (TL)-40 to +85 ºC

Max RF Input Power for 50 ohm output

load 27 dBm

Max RF Input Power for 10:1 VSWR out-

put load 23 dBm

Storage Temperature Range -40 to +150 ºC

Operating Junction Temperature (TJ)+150 ºC

ESD Human Body Model 500 V

Operation of this device beyond any one of these limits may

cause permanent damage. For reliable continuous operation

the device voltage and current must not exceed the maximum

operating values specified in the table on page one.

Bias conditions should also satisfy the following expression:

IDVD < (TJ - TL) / RTH’ j-l

Typical Performance with Appropriate App Circuit (Vcc=5V, Icq=460mA, * 802.11g 54Mb/s

Parameter Units 2.7GHz 3.0GHz 3.3GHz 3.4GHz 3.5GHz 3.7GHz 3.8GHz

Gain@Pout=26dBm dB 13 12.5 12.1 12.0 11.9 11.1 10.4

P1dB dBm 33.5 33.5 33.6 33.9 33.6 32.7 32.3

Pout @ 2.5% EVM* dBm 26 26 26 26 26 25.5 25

Current @ Pout 2.5% EVM* mA 590 590 580 580 570 560 550

Input Return Loss dB 15 15 17 16 15 12 12

Output Return Loss dB 999910 9 9

Caution: ESD Sensitive

Appropriate precaution in handling, packaging

and testing devices must be observed.

Pin Out Description

Pin # Function Description

1VBIAS This is the supply voltage for the active bias circuit.

2RFIN This is the RF input pin and has a DC voltage present. An external DC block is required.

3VPC Power up/down control pin. The voltage on this pin should never exceed the voltage on pin 3 by

more than 0.5V unless the supply current from pin 3 is limited < 10mA.

4VDET This is the output port for the power detector. It samples the power at the input of the amplifier.

5RFOUT/VCC This is the RF output pin and DC connection to the collector.

6NC This pin is not connected internal to the package. Buss it to pin 5 as shown on the app circuit to

achieve the specified performance.

GND GND These pins are DC connected to the backside paddle. They provide goos thermal connection to the

backside paddle for hand soldering and rework. Many thermal and electrical GND vias are recom-

mended as shown in the landing pattern.

Simplified Device Schematic

VBIAS

RFIN

VPC VDET

RFOUT/VCC

Bias

GND

303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com

3EDS-104666 Rev B

Preliminary

SZP-3026Z 2.7-3.8GHz 2W Power Amp

Measured 3.4-3.6 GHz Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 460mA, T=25C)

EVM vs Pout, F=3.6GHz

802.11g, OFDM, 54Mb/s, 64QAM

12 14 16 18 20 22 24 26 28 30

Pout(dBm)

EVM(%)

-40c +25c +85c

EVM vs Pout, F=3.4GHz

802.11g, OFDM, 54Mb/s, 64QAM

12 14 16 18 20 22 24 26 28 30

Pout(dBm)

EVM(%)

-40c +25c +85c

Typical Gain vs Pout, F=3.4GHz

14 16 18 20 22 24 26 28 30 32 34 36

Pout(dBm)

Gain(dB)

-40c +25c +85c

EVM vs Pout, F=3.7GHz

802.11g, OFDM, 54Mb/s, 64QAM

12 14 16 18 20 22 24 26 28 30

Pout(dBm)

EVM(%)

-40c +25c +85c

EVM vs Pout, T=+25C

802.11g, OFDM, 54Mb/s, 64QAM

12 14 16 18 20 22 24 26 28 30

Pout(dBm)

EVM(%)

3.4GHz 3.5GHz 3.6GHz 3.7GHz

IM3 vs Pout (2 tone avg.), T=+25C

Tone Spacing=1MHz

-65

-60

-55

-50

-45

-40

-35

18 20 22 24 26 28

Pout(dBm)

IM3(dBc)

3.4GHz 3.5GHz 3.6GHz 3.7GHz

Source EVM = 0.6%, not deembedded from data.

303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com

4EDS-104666 Rev B

Preliminary

SZP-3026Z 2.7-3.8GHz 2W Power Amp

Measured 3.4-3.6 GHz Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 460mA, T=25C)

Typical Gain vs Pout, F=3.6GHz

14 16 18 20 22 24 26 28 30 32 34 36

Pout(dBm)

Gain(dB)

-40c +25c +85c

Typical Gain vs Pout, F=3.7GHz

14 16 18 20 22 24 26 28 30 32 34 36

Pout(dBm)

Gain(dB)

-40c +25c +85c

Narrowband S11 - Input Return Loss

-25

-20

-15

-10

-5

3.00 3.10 3.20 3.30 3.40 3.50 3.60 3.70 3.80 3.90 4.00

Frequency(GHz)

S11(dB)

-40C +25C +85C

Narrowband S21 - Forward Gain

3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0

Frequency(GHz)

S21(dB)

-40C +25C +85C

Narrowband S12 - Reverse Isolation

-35

-33

-31

-29

-27

-25

-23

-21

3.00 3.10 3.20 3.30 3.40 3.50 3.60 3.70 3.80 3.90 4.00

Frequency(GHz)

S12(dB)

-40C +25C +85C

Narrowband S22 - Output Return Loss

-25

-20

-15

-10

-5

3.00 3.10 3.20 3.30 3.40 3.50 3.60 3.70 3.80 3.90 4.00

Frequency(GHz)

S22(dB)

-40C +25C +85C

303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com

5EDS-104666 Rev B

Preliminary

SZP-3026Z 2.7-3.8GHz 2W Power Amp

Measured 3.4-3.6 GHz Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 460mA, T=25C)

Noise Figure vs Freq O.T.

2.5

3.5

4.5

5.5

6.5

7.5

3.3 3.4 3.5 3.6 3.7 3.8

Frequency(GHz)

NF(dB)

-40C +25C +85C

RF Power Detector (Vdet) vs Pout, F=3.4GHz

0.8

1.2

1.4

1.6

1.8

2.2

2.4

2.6

15 20 25 30 35

Pout(dBm)

Vdet(V)

-40c +25c +85c

RF Power Detector (Vdet) vs Pout, F=3.6GHz

0.8

1.2

1.4

1.6

1.8

2.2

2.4

2.6

15 20 25 30 35

Pout(dBm)

Vdet(V)

-40c +25c +85c

RF Power Detector (Vdet) vs Pout, F=3.7GHz

0.8

1.2

1.4

1.6

1.8

2.2

2.4

2.6

15 20 25 30 35

Pout(dBm)

Vdet(V)

-40c +25c +85c

DC Supply Current (Idc) vs Pout, T=+25C

0.4

0.6

0.8

1.0

1.2

15 17 19 21 23 25 27 29 31 33 35

Pout(dBm)

Idc(A)

3.4GHz 3.5GHz 3.6GHz 3.7GHz

DC Supply Current (Idc) vs Pout, F=3.5GHz

0.2

0.4

0.6

0.8

1.0

1.2

15 17 19 21 23 25 27 29 31 33 35

Pout(dBm)

Idc(A)

-40c +25c +85c

303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com

6EDS-104666 Rev B

Preliminary

SZP-3026Z 2.7-3.8GHz 2W Power Amp

Measured 3.4-3.6 GHz Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 460mA, T=25C)

Broadband S11 - Input Return Loss

-25

-20

-15

-10

-5

0.0 1.0 2.0 3.0 4.0 5.0 6.0

Frequency(GHz)

S11(dB)

-40C +25C +85C

Broadband S12 - Reverse Isolation

-40

-35

-30

-25

-20

-15

-10

0.0 1.0 2.0 3.0 4.0 5.0 6.0

Frequency(GHz)

S12(dB)

-40C +25C +85C

Broadband S21 - Forward Gain

-5

0.0 1.0 2.0 3.0 4.0 5.0 6.0

Frequency(GHz)

S21(dB)

-40C +25C +85C

Broadband S22 - Output Return Loss

-12

-10

-8

-6

-4

-2

0.0 1.0 2.0 3.0 4.0 5.0 6.0

Frequency(GHz)

S22(dB)

-40C +25C +85C

303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com

7EDS-104666 Rev B

Preliminary

SZP-3026Z 2.7-3.8GHz 2W Power Amp

3.4-3.6 GHz Evaluation Board Schematic For V+ = Vcc = Vpc = 5.0V, Iq=460mA

3.4-3.6GHz Evaluation Board Layout For V+ = Vcc = Vpc = 5.0V, Iq=460mA

Board material GETEK, 10mil thick, Dk=3.9, 2 oz. copper

R3 R4

3 4

Bias

SZP-3026

303 South Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com

8EDS-104666 Rev B

Preliminary

SZP-3026Z 2.7-3.8GHz 2W Power Amp

Package Outline Drawing ( dimensions in mm [in] ):

4016

Part Symbolization

The part will be symbolized with a “SZP-3026Z” to

designate it as a RoHS green compliant product.

Marking designator will be on the top surface of the

package.

Recommended Metal Land Pattern (dimensions in mm [in]):

Part Number Ordering Information

Part Number Reel Size Devices/Reel

SZP-3026Z* 13” 3000

* Matte tin finish