THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 0.875 oC/W
ELE CT RICAL CHAR ACT ERIST I CS (Tcase = 25 oC unless otherwise specif ied)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off
Current (IE = 0) VCB = 100 V
VCB = 100 V Tcase = 150 oC1
5mA
mA
IEBO Emitter Cut-off Current
(IC = 0) VEB = 4 V 1 mA
VCEO(sus)∗Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 200 mA 90 V
VCER(sus)∗Collector-emitter
Sustaining Voltage
(RBE = 100 Ω)
IC = 200 mA 100 V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 7.5 A IB = 0.75 A 0.8 V
VBE(sat)∗Base-Emitter
Saturation Voltage IC = 7.5 A IB = 0.75 A 1.3 V
VBE∗Base-Emitter Voltage IC = 7.5 A VCE = 2 V 1.3 V
hFE∗DC Current Gain IC = 7.5 A VCE = 2 V 25 100
fTTransition Frequency IC = 1 A VCE = 10 V
f = 1 MHz 2 MHz
∗ P ulsed: P ulse durat ion = 300 µs, d uty cy cle 1.5 %
MJ802
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