JAN2N2060L - Semicoa Semiconductor

MIL-PRF-19500/270G

10 August 1998

SUPERSEDING

MIL-PRF-19500/270F

19 January 1998

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, UNITIZED, DUAL-TRANSISTOR, NPN,

SILICON, TYPES 2N2060 AND 2N2060L

JAN, JANTX, JANTXV, AND JANS

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for two electrically isolated, matched NPN, silicon transistors as

one dual unit. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figure 1 (similar to TO-77 or TO-99).

1.3 Maximum ratings.

PT1

TA = +25

CPT2

TC = +25

CICVCBO VCEO VEBO TSTG and TJ

One

section

Both

sections

One

section

Both

sections

540

600

1.5

2.12

mA dc

500

V dc

100

V dc

-65 to +200

1/ For TA > +25

C, derate linearly 3.08 mW/

C one section, 3.48 mW/

C both sections.

2/ For TC > +25

C, derate linearly 8.6 mW/

C one section, 12.1 mW/

C both sections.

1.4 Primary electrical characteristics at TA = +25

hFE1 hFE2 hFE3 hFE4 1/ | hfe|VCE(sat) VBE(sat)

Limit VCE= 5 V dc

IC = 10

A dc

VCE= 5 V dc

IC = 100

A dc

VCE= 5 V dc

IC = 1 mA dc

VCE= 5 V dc

IC = 10 mA dc

VCE= 10 V dc

IC = 50 mA dc

f = 20 MHz

IC = 50 mA dc

IB = 5 mA dc

IC = 50 mA dc

IB = 5 mA dc

Min

Max 25

75 30

90 40

120 50

150 3

V dc

0.3

V dc

0.9

1/ Pulsed (see 4.5.1).0

AMSC N/A FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

This is an advance copy of the dated document. The final document from Defense Automated Printing Service may be slightly

different in format due to electronic conversion processes. Actual technical content will be the same.

The documentation and process conversion

measures necessary to comply with this

revision shall be completed by 10 November 1998.

INCH-POUND

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this

document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad

Street, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing

at the end of this document or by letter.

MIL-PRF-19500/270G

NOTES:

1. Dimensions are in inches.

2. Metric equivalents are given for general information only.

3. Refer to rules for dimensioning semiconductor product outlines included in Publication No. 95.

4. Lead number 4 and 8 omitted on this variation.

5. Beyond r, TW must be held to a minimum length of .021 inch (.53 mm).

6. TL measured from maximum CD.

7. Details of outline in this zone optional.

8. CD1 shall not vary more than .010 inch (.25 mm) in zone P. This zone is controlled for automatic handling.

9. Leads at gauge plane .054 - .055 inch (1.37 - 1.40 mm) below seating plane shall be within .007 inch (.18 mm) radius of

true position (TP) at a maximum material condition (MMC) relative to the tab at MMC. The device may be measured by

direct methods or by the gauge and gauging procedure described on gauge drawing GS-1.

10. LU applies between LL1 and LL2 LD applies between LL2 and LL minimum. Diameter is uncontrolled in LL1 and beyond

minimum.

11. r (radius) applies to both inside corners of tab.

12. For transistor types 2N2060, LL is .500 inch (12.70 mm) minimum, and .750 inch (19.50 mm) maximum.

13. For transistor types 2N2060L, LL is 1.500 inches (38.10 mm) minimum, and 1.750 inches (44.45 mm) maximum.

FIGURE 1. Physical dimensions.

Dimensions

Symbol Inches Millimeters Notes

Min Max Min Max

CD .335 .370 8.51 9.40

CD1.305 .335 7.75 8.51

CH .150 .260 3.81 7.60

LC .200 TP 5.08 TP 9

LC1.140 .160 3.56 4.06

LD .016 .021 0.41 0.53 10

LL See notes 10, 12, and 13

LL1- - - .050 - - - 1.27 10

LL2.250 - - - 6.35 - - - 10

LU .016 .019 0.41 0.48 10

P .100 - - - 2.54 - - - 8

Q - - - .050 - - - 1.27 7

TL .029 .045 0.74 1.14 5, 6

TW .028 .034 0.71 0.86 4, 5

h .009 .041 0.23 1.04

r - - - .010 - - - 0.25 11

TP 45

TP 9

MIL-PRF-19500/270G

1.5 Primary electrical matching characteristics of each individual section.

hFE

−

1/ | VBE1 - VBE2||

( VBE1 - VBE2)

TA |1 |

(VBE1 - VBE2)

TA |2

Limit VCE = 5 V dc;

IC = 100

A dc

VCE = 5 V dc;

IC = 100

A dc VCE = 5 V dc;

IC = 100

A dc

TA = +25

C and -55

VCE = 5 V dc;

IC = 100

A dc

TA = +125

C and +25

Min

Max 0.9

1.0

mV dc

- - -

mV dc

- - -

0.8

- - -

1.0

1/ The larger number will be placed in the denominator.

2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include

documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has

been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements

documents cited in sections 3 and 4 of this specification, whether or not they are listed.

2.2 Government documents.

2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document

to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department

of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2).

SPECIFICATION

DEPARTMENT OF DEFENSE

MIL-PRF-19500 - Semiconductor Devices, General Specification for.

STANDARD

MILITARY

MIL-STD-750 - Test Methods for Semiconductor Devices.

(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Standardization

Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)

2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein (except for

related associated specifications or specification sheets), the text of this document takes precedence. Nothing in this document,

however, supersedes applicable laws and regulations unless a specific exemption has been obtained.

3. REQUIREMENTS

3.1 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing

on the applicable qualified products list before contract award (see 4.2 and 6.3).

MIL-PRF-19500/270G

3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-

19500 and as follows.

hFE

−

.............................................Static forward-current-gain-ratio. The matching ratio of the static forward-current transfer ratios

of each section.

|VBE1 - VBE2| .....................................Absolute value of base-emitter-voltage differential between the individual sections.

( VBE1 - VBE2)

TA |.......................Absolute value of the algebraic difference between the base-emitter-voltage differentials

between the individual sections at two different temperatures.

3.3 Interface requirements and physical dimensions. The interface requirements and physical dimensions shall be as specified in

MIL-PRF-19500, MIL-HDBK-6100 and herein.

3.3.1 Lead finish. Lead finish shall be gold, silver, tin, or solder plated. Lead finish shall be solderable as defined in MIL-PRF-19500,

MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition requirements (see 6.2).

3.4 Marking. Devices shall be marked as specified in MIL-PRF-19500.

3.5 Electrical performance characteristics. Unless otherwise specified, the electrical performance characteristics are as specified in

1.3, 1.4, and table I herein.

3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and 4.4.3 herein.

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500.

MIL-PRF-19500/270G

4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with MIL-PRF-19500 (table IV), and as

specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I

herein shall not be acceptable.

Screen (see Measurement

table IV of

MIL-PRF-19500) JANS level JANTX and JANTXV levels

3c Thermal impedance (see 4.3.2) Thermal impedance (see 4.3.2)

9ICBO2, h

hFE

−

, and hFE3 Not applicable

10 48 hours minimum 48 hours minimum

11 ICBO2, h

hFE

−

, and hFE3

ICBO2 = 100 percent of initial value or

2 nA dc, whichever is greater.

hFE3 =

15 percent

ICBO2 and hFE3

12 See 4.3.1

240 hours minimum See 4.3.1

80 hours minimum

13 Subgroups 2 and 3 of table I herein;

ICBO2 = 100 percent of initial value or

2 nA dc, whichever is greater.

hFE3 =

15 percent

Subgroup 2 of table I herein;

ICBO2 = 100 percent of initial value or

2 nA dc, whichever is greater.

hFE3 =

15 percent

13 (a) MIL-STD-750, method 1016, test condition A

(collector to collector)

RC1-C2 = 109 ohms minimum.

Not applicable

4.3.1 Power burn-in conditions. Power burn-in conditions are as follows:

JANS level (all device types) ..................VCB = 10 - 40 V dc, PT = 300 mW (each section) at TA = +25

VCB = 10 - 40 V dc, PT = 600 mW (both sections) at TA = +25

JANTX and JANTXV levels

(all device types)......................................VCB = 10 - 40 V dc, PT = 300 mW (each section) at TA = +25

VCB = 10 - 40 V dc, PT = 600 mW (both sections) at TA = +25

NOTE: No heat sink or forced air cooling on the devices shall be permitted.

4.3.2 Thermal impedance (Z

JX measurements). The Z

JX measurements shall be performed in accordance with MIL-STD-750,

Method 3131.

a. IM measurement current---------------------- 5 mA.

b. IH forward heating current ------------------- 200 mA (min).

c. tH heating time --------------------------------- 25 - 30 ms.

d. tmd measurement delay time ---------------- 60

s max.

e. VCE collector-emitter voltage --------------- 10 V dc minimum

The maximum limit for Z

JX under these test conditions are Z

JX (max) = 72

C/W.

MIL-PRF-19500/270G

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. If

alternate screening is being performed per MIL-PRF-19500, a sample of screened devices shall be submitted to and pass the

requirements of group A1 and A2 inspection only (table VIb, group B, subgroup 1 is not required to be performed again if group B has

already been satisfied per 4.4.2).

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein.

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in

table VIa (JANS) of MIL-PRF-19500 and 4.4.2.1. Electrical measurements (end-points) and delta requirements shall be in accordance

with group A, subgroup 2 and 4.5.9 herein. See 4.4.2.2 for JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-

points) and delta requirements for JAN, JANTX, and JANTXV shall be after each step in 4.4.2.2 and shall be in accordance with group A,

subgroup 2 and 4.5.9 herein.

4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.

Subgroup Method Condition

B4 1037 VCB = 10 V dc; TJ = 150

C, ton = toff = 3 minutes minimum for 2,000 cycles. No heat sink or forced-air

cooling on devices shall be permitted.

B5 1027 VCB = 10 V dc; TA = +125

C +25

C for 96 hours with PT adjusted according to the chosen TA to give an

average TJ = +275

4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). 1/

Step Method Condition

1 1039 Steady-state life: Test condition B, 340 hours, VCB = 10 -30 V dc, TJ = 150

C min. No heat sink or forced-

air cooling on the devices shall be permitted. n = 45 devices, c = 0

2 1039 The steady state life test of step 1 shall be extended to 1,000 hrs for each die design. Samples shall

be selected from a wafer lot every twelve months of wafer production. Group B step 2

shall not be required more than once for any single wafer lot. n = 45, c = 0.

3 1032 High-Temperature life (non-operating), t = 340 hours, TA = +200

C. n = 22, c = 0

1/ Separate samples may be used for each step. In the event of a group B failure, the manufacturer may pull a new sample at

double size from either the failed assembly lot or from another assembly lot from the same wafer lot. If the new “assembly lot” option is

exercised, the failed assembly lot shall be scrapped.

4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following requirements:

a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or from each wafer in

the lot) from each wafer lot. For JANS, samples shall be selected from each inspection lot. See MIL-PRF-19500.

b. Must be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2, conformance inspection.

When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (subgroups

B4 and B5 for JANS, and group B for JAN, JANTX, and JANTXV) may be pulled prior to the application of final lead finish.

4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in

table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS).and 4.4.3.2 (JAN, JANTX, and JANTXV) herein for group C testing. Electrical

measurements (end points) and delta requirements shall be in accordance with group A, subgroup 2 and 4.5.9 herein.

MIL-PRF-19500/270G

4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500.

Subgroup Method Condition

C2 2036 Test condition E.

C6 1026 1,000 hours at VCB = 10 V dc; TJ = 150

C min. No heat sink or forced-air cooling on device shall be

permitted.

4.4.3.2 Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500.

Subgroup Method Condition

C2 2036 Test condition E.

C6 Not Applicable

4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any inspection lot containing the

intended package type and lead finish procured to the same specification which is submitted to and passes group A tests for

conformance inspection. Testing of a subgroup using a single device type enclosed in the intended package type shall be considered as

complying with the requirements for that subgroup.

4.4.4 Group E Inspection. Group E inspection shall be performed for qualification or re-qualification only. The tests specified in

table II herein must be performed to maintain qualification.

4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.

4.5.2 Testing of units. All specified electrical tests, including electrical measurements (end points) and delta requirement tests, shall

be performed equally on both sections of the transistor types covered herein, except where the electrical characteristic being evaluated

applies to the transistor as a device entity.

4.5.3 Disposition of leads when testing characteristics of each section. During the measurement of the characteristic of each section,

the leads of the section not under test shall be open-circuited.

4.5.4 Forward-current-gain ratio. The value for the forward-current-gain ratio for each individual section of a dual unit shall be

measured using method 3076 of MIL-STD-750. The forward-current-gain ratio shall be calculated by dividing one of the values by the

other. If possible, this ratio shall be measured directly to improve accuracy.

4.5.5 Base-emitter-voltage differential. The base-emitter-voltage differential shall be determined by connecting the emitters of the

individual sections together, applying specified electrical test conditions to each individual section in accordance with test condition B,

method 3066 of MIL-STD-750, and measuring the absolute value of the voltage between the bases of the individual sections of a d ual

unit.

4.5.6 Base-emitter-voltage differential change with temperature. The value of the base-emitter-voltage differential shall be measured at

the two specified temperatures in accordance with 4.5.5 except that the identities of the individual sections shall be maintained. The

absolute value of the algebraic difference between the values at the two temperature extremes shall be calculated. A mathematical

formula for this parameter is:

| (VBE1 - VBE2) T1 - (VBE1 - VBE2) T2 |

4.5.7 Noise figure test. Noise figure shall be measured using a model No. 2173C/2181 Quan Tech Laboratories test set, or

equivalent. Conditions shall be as specified in table I.

MIL-PRF-19500/270G

4.5.8 Noise figure (wideband) test. Wideband noise figure shall be measured using a model No. 512 Quan Tech Laboratories test

set, or equivalent. Conditions shall be as specified in table I.

4.5.9 Delta Requirements. Delta requirements shall be as specified below:

Step Inspection MIL-STD-750 Symbol Limit

Method Conditions

1. Forward-current

transfer ratio 3076 VCE = 5 V dc;

IC = 1 mA dc

hFE3

25 percent

change from initial

reading.

2. Collector to base

cutoff current 3036 Bias condition D;

VCB = 80 V dc

ICBO2 1/ 100 percent or 2

nA dc, whichever

is greater.

3. Saturation voltage and

resistance (collector

to emitter voltage)

3071 IC = 50 mA dc,

IB = 5 mA dc

VCE(sat) 2/

50 percent mV

dc from initial

reading.

4. Base emitter voltage

(nonsaturated)

(absolute value of

differential - change

with temperature)

3066 Test condition B;

VCE = 5 V dc,

IC = 100

A dc,

TA = +25

C and -55

C (see

4.5.6)

(VBE1 - VBE2)

TA|2

2/ 0.80 mV dc

maximum

5. Base emitter voltage

(nonsaturated)

(absolute value of

differential - change

with temperature)

3066 Test condition B;

VCE = 5 V dc,

IC = 100

A dc,

TA = +25

C and +125

(see 4.5.6)

(VBE1 - VBE2)

TA|2

2/ 1.0 mV dc

maximum

1/ Devices which exceed the group A limits for this test shall not be accepted.

2/ JANS only

MIL-PRF-19500/270G

TABLE I. Group A inspection.

Inspection 1/ MIL-STD-750 Symbol Limits Unit

Method Conditions Min Max

Subgroup 1 2/

Visual and mechanical 3/

examination 2071 n = 45 devices, c = 0

Solderability 3/, 5/

Resistance to solvents

3/, 4/, 5/

2026

1022

n = 15 leads, c = 0

n = 15 devices, c = 0

Temp Cycling 3/, 5/1051 Test condition C, 25 cycles.

n = 22 devices, c = 0

Heremetic Seal 5/ 1071 n = 22 devices, c = 0

Fine leak

Gross leak

Electrical

measurements, 5/ Group A, subgroup 2

Bond strength 3/, 5/2037 Precondition TA = +250

C at t = 24

hrs or TA = 300

C at t = 2 hrs

n = 11 wires, c = 0

Subgroup 2

Collector to base cutoff

current 3036 Bias condition D, VCB = 100 V dc ICBO1 10

A dc

Breakdown voltage, collector

to emitter 3011 Bias condition B, IC = 10 mA dc

RBE

10 ohms, pulsed (see 4.5.1) V(BR)CER 80 V dc

Breakdown voltage,

collector to emitter 3011 Bias condition D, IC = 30 mA dc

pulsed (see 4.5.1) V(BR)CEO 60 V dc

Emitter to base cutoff current 3061 Bias condition D, VEB = 7 V dc IEBO1 10

A dc

Collector to base cutoff

Current 3036 Bias condition D; VCB = 80 V dc ICBO2 2 nA dc

Emitter to base cutoff current 3061 Bias condition D, VEB = 5 V dc IEBO2 2 nA dc

Saturation voltage and

resistance 3071 IC = 50 mA dc; IB = 5 mA dc VCE(sat) 0.3 V dc

Base emitter voltage

(saturated) 3066 Test condition A, IC = 50 mA dc;

IB = 5 mA dc VBE(sat) 0.9 V dc

Forward-current transfer ratio 3076 VCE = 5 V dc; IC = 10

A dc hFE1 25 75

Forward-current transfer ratio 3076 VCE = 5 V dc; IC = 100

A dc hFE2 30 90

See footnotes at end of table.

MIL-PRF-19500/270G

TABLE I. Group A inspection - continued

Inspection 1/ MIL-STD-750 Limit Unit

Method Conditions Symbol Min Max

Subgroup 2 - Continued

Forward-current transfer ratio 3076 VCE = 5 V dc; IC = 1 mA dc hFE3 40 120

Forward-current transfer ratio 3076 VCE = 5 V dc; IC = 10 mA dc;

pulsed(see 4.5.1) hFE4 50 150

Forward-current transfer ratio

(gain ratio) 3076 VCE = 5 V dc; IC = 100

A dc;

pulsed(see 4.5.1) h

hFE

−

− 6/ 0.9 1.0

Forward-current transfer ratio

(gain ratio) 3076 VCE = 5 V dc; IC = 1.0 mA dc;

pulsed(see 4.5.1) h

hFE

−

6/ 0.9 1.0

Absolute value of base

emitter-voltage differential 3066 Test condition B; VCE = 5 V dc;

IC = 100

A dc (see 4.5.5) |VBE - VBE2| 1 5 mV dc

Absolute value of base

emitter-voltage differential 3066 Test condition B; VCE = 5 V dc;

IC = 1 mA dc (see 4.5.5) |VBE - VBE2| 2 5 mV dc

Base-emitter-voltage

(nonsaturated) (absolute value

of differential change with

temperature)

3066 Test condition B; VCE = 5 V dc;

IC = 100

A dc (see 4.5.5)

TA = +25

C and -55

C (see 4.5.6)

(VBE1 - VBE2)

|1 .8 mV dc

Base-emitter-voltage

(nonsaturated) (absolute value

of differential change with

temperature)

3066 Test condition B, VCE = 5 V dc;

IC = 100

A dc;

TA = +25

C and +125

C (see

4.5.6)

(VBE1 - VBE2)

|2 1 mV dc

Subgroup 3

High temperature operation: TA = +150

Collector to base cutoff current 3036 Bias condition D, VCB = 80 V dc ICBO3 10

A dc

Low temperature operation: TA = -55

Forward-current transfer ratio 3076 VCE = 5 V dc; IC = 100

A dc hFE5 10

Subgroup 4

Small-signal short-circuit

forward-current transfer ratio 3206 VCE = 5 V dc; IC = 1 mA dc;

f = 1 kHz hfe 50 150

Common emitter small-signal

short-circuit forward-current

transfer ratio

3306 VCE = 10 V dc; IC = 50 mA dc;

f = 20 MHz |hfe|325

Small-signal short-circuit input

impedance 3201 VCB = 5 V dc; IC = 1 mA dc;

f = 1 kHz hib 20 30

See footnotes at end of table.

MIL-PRF-19500/270G

TABLE I. Group A inspection - Continued.

Inspection 1/ MIL-STD-750 Symbol Limits Unit

Method Conditions Min Max

Subgroup 4

Small-signal short circuit

input impedance 3201 VCE = 5 V dc; IC = 1 mA dc;

f = 1 kHz hie 1,000 4,000

Small-signal open-circuit

output admittance 3216 VCE = 5 V dc; IC = 1 mA dc;

f = 1 kHz hoe 016

mhos

Output capacitance (input

open circuited) 3236 VCB = 10 V dc; IE = 0;

100 kHz

1 MHz Cobo 15 pF

Input capacitance (output

open circuited) 3240 VEB = 0.5 V dc; IE = 0;

100 kHz

1 MHz Cibo 85 pF

Noise figure 3246 VCE = 10 V dc; IC = 300

A dc;

Rg = 510

; f = 1 kHz (see 4.5.7) F1 8 dB

Noise figure 3246 VCE = 10 V dc; IC = 300

A dc;

Rg = 1 k

; f = 10 kHz (see 4.5.7) F2 8 dB

Collector to collector leakage ---- Test condition (see 4.5.3)

V(collector 1 to collector 2) = 100 V dc I(collector 1 to

collector2)

100 nA dc

1/ For sampling plan, see MIL-PRF-19500.

2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure in group A,

subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon submission.

3/ Separate samples may be used.

4/ Not required for laser marked devices.

5/ Not required for JANS devices.

6/ The larger number will be placed in the denominator.

MIL-PRF-19500/270G

5. PACKAGING

5.1 Packaging. Packaging shall prevent mechanical damage of the devices during shipping and handling and shall not be detrimental

to the device. When actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible

packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points'

packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging

data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or

by contacting the responsible packaging activity.

5.2 Marking. Unless otherwise specified (see 6.2), marking shall be in accordance with MIL-STD-129.

6. NOTES

(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)

6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification.

6.2 Acquisition requirements. See MIL- PRF-19500.

6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of

award of contract, qualified for inclusion in Qualified Products List QPL No.19500 whether or not such products have actually been so

listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the

products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded

contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be

obtained from Defense Supply Center Columbus, ATTN: DSCC-VQE, 3990 East Broad Street, Columbus, OH 43216-5000.

6.4 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous

issue due to the extensiveness of the changes.

Custodians: Preparing activity:

Army - CR DLA - CC

Navy - EC

Air Force - 17 (Project 5961-2048-02)

Review activities:

Army - AR, AV, MI, SM

Air Force - 13, 19, 85, 99

Navy - AS, CG, MC, OS, SH

STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL

INSTRUCTIONS

1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision

letter should be given.

2. The submitter of this form must complete blocks 4, 5, 6, and 7.

3. The preparing activity must provide a reply within 30 days from receipt of the form.

NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current

contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s)

or to amend contractual requirements.

I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER

MIL-PRF-19500/270G 2. DOCUMENT DATE

10 August 1998

3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, UNITIZED, DUAL-TRANSISTOR, NPN, SILICON, TYPES 2N2060 AND

2N2060L JAN, JANTX, JANTXV, AND JANS

4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as

needed.)

5. REASON FOR RECOMMENDATION

6. SUBMITTER

a. NAME (Last, First, Middle initial) b. ORGANIZATION

c. ADDRESS (Include Zip Code) d. TELEPHONE (Include Area Code) Commercial

DSN

FAX

7. DATE SUBMITTED

8. PREPARING ACTIVITY

a. Point of Contact

Alan Barone

b. TELEPHONE

Commercial DSN FAX EMAIL

614-692-0510 850-0510 614-692-6939 alan_barone@dscc.dla.mil

c. ADDRESS

Defense Supply Center Columbus

ATTN: DSCC-VAT

Columbus, OH 43216-5000

IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:

Defense Quality and Standardization Office

5203 Leesburg Pike, Suite 1403,

Falls Church, VA 22041-3466

Telephone (703) 756-2340 DSN 289-2340