Standard Power MOSFETs File Number 1904 2N6800 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 3A, 400V rosion = 10 N-CHANNEL ENHANCEMENT MODE 0 Features: g SOA is power-dissipation limited g Nanosecond switching speeds m Linear transfer characteristics 6 @ High input impedance @ Majority carrier device Ss 92CS-33741 TERMINAL DIAGRAM The 2N6800 is an n-channel enhancement-mode silicon- gate power MOS field-effect transistor designed for appli- cations such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipo- lar switching transistors requiring high speed and low gate- drive power. This type can be operated directly from an GATE integrated circuit. SOUFICE The 2N6800 is supplied in the JEDEC TO-205AF metal @ package. Q DRAIN (CASE) JEDEC TO-205AF MAXIMUM RATINGS, Absolute-Maximum Values (Tc = 25C): *DRAIN-SOURCE VOLTAGE, Vos 0.0.00 c ccc cc ee een ne enn n ne rene een eee nnn Eee eas 400V *DRAIN-GATE VOLTAGE (Res = 20 KQ), Voge... 66. ene ten enn ene nen nett eee ene en ee 400V *GATE-SOURCE VOLTAGE, Vas 20.0... c ccc cect een nee nner renee Eee ree tte E een Ens +20V *DRAIN CURRENT: RMS Continuous, lo 7 a Aa > hk 3A At To = 100C Loc nn nnn enn EEO ree Eee Ete e er Denne ee ren Ee eee te tee enn ee 2A 1 0) X70 Fo 144 SOURCE CURRENT: COMtiNUOUS, Is 66 ene ERR REE EDR EEE Ene nen eee ee Hebden beeen e eee en beeen 3A Ud 0] <0 Fal ot 144 *POWER DISSIPATION, Pr: FN i Do daad 2 25W Above Te = 25C occ eee een nee een eee e tenn ner b eee nee eee Derate linearly 0.20 W/C INDUCTIVE CURRENT, Clamped (L = 100uH), lim 01.0.0 ce eee eee e eens ee eeernneer reece 14A OPERATING AND STORAGE TEMPERATURE, Tj, Tstg 0-0... s cece cece e ee ence nee cence nee eeeeeenees -55 to +150C LEAD TEMPERATURE, Ti: At distances 0.063 in. (1.6 mm) from seating plane for 105 Max. ....... 0... e ence cence ete eeeneennes 300C In accordance with JEDEC registration data. 3-549Standard Power MOSFETs 2N6800 Electrical Characteristics @ T, = 25C (Unless Otherwise Specified) See Fig. 10 See Fig. 15 (MOSFET switching times are essentially independent of operating temperature.) Thermal Resistance Junction-to-Case _.-_. _ | 50 Jow | _]| Junction-to-Ambient _{ - | | 17% [c | Free Air Operation _| Source-Drain Diode Switching Characteristics (Typical) tre Reverse Recovery Time 600 { na | Ty = 150C, Ig = 3.0A, digict = 100A/ya Gar Reverse Recovered Charge 46 {_ #C [Ty = 150C, Ip = 3.0A, digidt = 100A/us L ton Forward Turn-on Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Lg + Lp. JEDEC registered value 4 Pulse Test: Pulse width < 300us, Duty Cycle < 2%. 80 us PULSE TEST Vos > 'oton) * Rosion) max. ip, ORAIN CURRENT (AMPERES) Ip, ORAIN CURRENT (AMPERES? 0 so 100180200280 300380 0 1 2 3 4 5 6 ? Vos. DRAIN-FO- SOURCE VOLTAGE (VOLTS) Vg5. GATE. TO-SQUACE VOLTAGE VOLTS) Fig. 1 - Typical output characteristics. Fig. 2 - Typical transfer characterzistics. 3-550Standard Power MOSFETs 2N6800 00 ys PULSE 2 1S LIMITED BY Agia) 05 02 a a y= 180C MAX, Ring * 5.0 KAW Ip. DRAIN CURRENT (AMPERES) Ip, ORAIN CURRENT (AMPERES) 0.02 0 4 6 a 12 14 00tD 2 5 10 20 50 100 200 500 Vog. GRAIN-TO SOURCE VOLTAGE (VOLTS) Vos. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 3 - Typical saturation characteristics. Fig. 4 - Maximum safe operating area. ~ 2 a Ss nn L aa 1. DUTY FACTOR, 0+ z 2. PER UNIT BASE = Rinjc # 5.0. DEG. CW. THERMAL IMPEDANCE) 3. Tym Te * Pom Zrnacltl. e eo a eo 2 S Zynsctt Rye, NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEQANCE (PER UNIT) 0.01 105 2 S 10-4 2 5 10-3 2 5 10-2 2 5 ro-t 2 5 10 5 10 ty, SQUARE WAVE PULSE DURATION (SECONDS) Fig. & - Maximum effective transient thermal impedance, junction-to-case versus pulse duration. TEST 2 DS >!D(on) * Roston) max 2 ~ wo Ty = ~H5 Nn Ty = 28C 5 Ty= 1250C 5 bry = 190C Sts. TRANSCONDUCTANCE (SIEMENS) inn. REVERSE ORAIN CURRENT (AMPERES) ~ Ty = 2690 any a 4 8 12 16 0 1 2 3 tp. ORAIN CURRENT (AMPERES) Vp. SOURCE.TO-ORAIN VOLTAGE {VOLTS) Fig. 6 - Typical transconductance versus drain current. Fig. 7 - Typical source-drain diode forward voltage. 3-551Standard Power MOSFETs 2N6800 1.25 es a o io a 0.85 BV pss. DRAIN-TO-SOUACE BREAKDOWN VOLTAGE (NORMALIZED) 0 5 -40 0 40 Bq 120 160 T), JUNCTION TEMPERATURE (C) Fig. 8 - Breakdown voltage versus temperature. 2000 Ves = = TMi: 1600 Cigg = Cyy + Cog, Cap SHORTED Cras = Cog Ca C, mgd Cong * Cog + Toy Cod 1200 * = Cay + Cog cf 3 s C, CAPACITANCE (pF) 400 0 10 20 30 40 50 Vos, ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 10 - Typical capacitance versus drain-to-source voltage. a a z =x 3 3 Ves = V/ < a2 Neg = 20V | @ r = o a o 2 > o @ o 2 Zz | 3 & Apsion) MEASURED WITH CURRENT PULSE OF 2.0, us OURATION. INITIAL Ty = 28C. (HEATING EFFECT OF 2.0 ys PULSE (S MINIMAL] \ - \ Go 5 10 5 20 25 30 Ip. ORAIN CURRENT (AMPERES) Fig. 12 - Typical on-resistance versus drain current. 3-552 22 = (NORMALIZED) = RSton). DRAIN-TO-SOURCE ON RESISTANCE 5 S a 02 -40 a 40 80 120 160 Ty, JUNCTION TEMPERATURE (C) Fig. 9 - Typical normalized on-resistance versus temperature. a wn Vgg. GATE-TO-SOURCE VOLTAGE {VOLTS} Ss fig. TOTAL GATE CHARGE {nC} Fig. 11 - Typical gate charge versus gate-to-source voltage. Te, CASE TEMPERATURE (C) a 50 1% 100 125 150 ip, DRAIN CURRENT (AMPERES) Fig. 13 - Maximum drain current versus case temperature.Standard Power MOSFETs HP. 8010A PULSE GEN. NOTES: 1, LHOO63 CASE GROUNDED. 2h 20 1h Pp, POWER DISSIPATICN (WATTS) 10 4 20 40 60 2N6800 80 100 120 140 Tg, CASE TEMPERATURE (C} Fig. 14 - Power versus temperature derating curve. + PULSE WIDTH sion) +10v___] INPUT 50% Ves(ott) OV INPUT PULSE RISE TIME ty (on} VOS(atf) ememeerrermmen TEKTRONIX ouTPuT 10% 7623 ose Vas(on) __- NOTES: 2, GROUNDED CONNECTIONS COMMON 70 GROUND PLANE ON BOARD. 3. PULSE WIOTH #3 us, PERIOD=1 ms, AMPLITUDE t0V. WHEN MEASURING RISE TIME, Vgg(gn) SHALL BE AS SPECIFIED ON THE INPUT WAVEFORM, WHEN MEASURING FALL TIME, Vesiotf) SHALL BE SPECIFIED ON THE INPUT WAVEFORM. THE INPUT TRANSITION AND ORAIN VOLTAGE RE- SPONSE DETECTOR SHALL HAVE RISE ANG FALL RESPONSE TIMES SUCH THAT OOUBLING THESE RESPONSES WILL NOT AFFECT THE RESULTS GREATER THAN THE PRECISION OF MEASUREMENT. THE CURRENT SHALL BE SUFFI- CIENTLY SMALL SO THAT DOUBLING IT DOES NOT AFFECT TESTS RESULTS GREATER THAN THE PRECISION OF MEASUREMENT. Fig. 15 - Switching time test circuit. NOTES: 1. SET Vps TO THE VALUE SPECIFIED UNOER DETAILS USING A 0.1s PULSE WIDTH WITH A MINIMUM OF 1 MINUTE BETWEEN PULSES. INCREASE Vos UNTIL THE SPECIFIED VALUE OF Ip AND Vag ARE OBTAINED. CASE TEMPERATURE = 25C. 2. SELECT Ag SUCH THAT Ip @ fig = 2.5 + 1.0 Vae. Fig. 16 - Safe operating test circuit. 3-553High-Reliability Power MOSFETs JAN, JANTX, and JANTXV Solid-State Power Devices The major military specification used for the procurement of standard solid-state devices by the military is MiL-S- 19500, which covers the devices such as discrete transistors, thyristors, and diodes. MIL-S-19500 is the specification for the familiar JAN type solid state devices. Detailed electrical specifications are prepared as needed by the three military services and coordinated by the Defense Electronic Supply Center (DESC). Levels of reliability are defined by MIL-S-19500. JAN types receive Group A, Group B, and Group C lot sampling only, and are the least expensive. JANTX types receive 100 QPL Approved Types JAN, JANTX, and JANTXV percent process conditioning, and power conditioning, and are subjected to lot rejection based on delta parameter criteria in addition to Group A, Group B, and Group C lot sampling. JANTXV types are subjected to 100 percent (JTXV) internal visual inspection in addition to ail of the JANTX tests in accordance with MIL-STD-750 test methods and MIL-S-19500. DESC publishes QPL-19500", a Qualified Products List of all types and suppliers approved to produce and brand devices in accordance with MIL-S-19500. The following tables list approved QPL types and types that are process of testing preliminary to QPL approval by DESC, respectively. Gustom high-reliability selections of Harris Power MOSFETs can also be supplied with similar process and power conditioning tests and delta criteria. Harris is presently qualified on the following devices. Prices and delivery quotations may be obtained from your local sales representative. JAN and JANTX Power MOSFETs N-Channel MIL-S- . Py lo BVoss tos (on) Types 19500/ Package Channel (w) (A) ) 0 2N6756 542 TO-204AA N 76 14 100 0.18 2N8758 542 TQ-204AA N 75 9 200 0.4 2N6760 $42 TO-204AA N 75 5.5 400 1 2N6762 542 TO-204AA N 75 45 500 15 2N6764 543 TO-204AE N 150 38 100 0,055 2N6766 543 TO-204AE N 450 30 200 0.085 2N6768 $43 TO-204AA N 450 14 400 03 2N6770 543 TO-204AA N 150 12 500 04 2N6782 556 TO-205AF N 15 3.5 100 0.6 2N6784 556 TO-205AF N 15 2.25 200 15 2N6788 555 TO-205AF N 20 6 100 0.3 2N6790 55 TO-205AF N 20 3.6 200 0.8 2N6792 555 TO-205AF N 20 2 400 18 2N6794 55 TO-205AF N 20 15 500 3 2N6796 57 TO-205AF N 25 8 100 0.18 2N6798 557 TO-205AF N 25 55 100 0.4 2N6800 557 TO-205AF N 25 3 400 4 2N6802 557 TO-205AF N 25 25 500 45 P-Channel MIL-S- P, Ib BVoss tos (on) Types 49500/ Package Channel w) A) v) a 2N6895 565 TO-205AF Pp 8.33 -15 -100 3.65 2N6896 565 TO-2044A P 60 -6 ~100 0.6 2N6897 565 TO-204AA P 100 -12 -100 0.3 2N6898 565 TO-204AA Pp 150 -25 -100 0.2 2N6849 564 TO-205AF P 25 -6.5 -100 0.3 2N6851 564 TO-205AF P 26 _ 74.0 -200 08 N-Channel Logic- MIL-S- . Py lo BVoss tos (on) Level Types 19500/ Package Channel ~ (A) ) a 2N6901 566 TO-205AF N 8.33 15 100 1.4 2N6902 566 TO-2044A N 7 12 100 02 2N6903 566 TO-205AF N 8.33 15 200 3.65 2N6904 566 TO-204AA N 75 8 200 0.65