SILICON PLASTIC POWER TRANSISTOR NPN 2N6292 7A 40W Technical Data ...designed for use in general-purpose switching and amplifier applications. F DC Current Gain - h FE = 30-150 @ IC = 2.0Adc F Collector-Emitter Sustaining Voltage - VCEO(sus) = 70 Vdc (Min) F TO-220 Package MAXIMUM RATINGS Rating Symbol Value Unit Collector- Emitter Voltage V CEO 70 Vdc Collector - Base Voltage Emitter Base Voltage Collector Current - Continuos Peak Base Current V CB V EB IC 80 5 7 10 3 Vdc Vdc Adc Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage junction Temperature Range PD Tj,Tstg 40 0.32 -65 to +150 Watts W/C C Symbol Max. Unit R thjc 3.125 C/W IB Adc THERMAL CHARACTERISTICS Characteristic Thermal resistance junction to case ELECTRICAL CHARACTERISTICS :[ Tc = 25 Characteristic C unless otherwise noted ] Symbol Min VCEO(sus) 70 Typ Max Unit * OFF CHARACTERISTICS : Collector-Emitter Sustaining Voltage (1) [ Ic =100 mAdc, IB = 0 ] Collector Cutoff Current [ VCE = 60 Vdc, IB = 0 ] Collector Cutoff Current [ VCE = 80 Vdc,VBE(off) = 1.5 Vdc ] [ VCE =70 Vdc, VBE(off) = 1.5 Vdc , Tc = 150 C ] Emitter Cutoff Current [ VBE=5.0 Vdc , Ic = 0 ] ICE0 Vdc 1 mAdc 100 Adc 2 1 mAdc ICEX IEBO mAdc * ON CHARACTERISTICS (1): DC Current Gain [ Ic = 2.0 Adc , VCE = 4.0 Vdc ] [ Ic = 7 Adc , VCE = 4.0 Vdc ] Collector-Emitter Saturation Voltage [ Ic = 7Adc , IB = 3 Adc ) Base-Emitter on Voltage [ Ic =7.0 Adc , VCE= 4.0. VDC ] hFE 30 2.3 150 VCE(sat) 3.5 Vdc VBE(on) 3.0 Vdc DYNAMIC CHARACTERISTICS : Current Gain - Bandwidth Product [Ic=0.5Adc,VCE=4Vdc,ftest=1.0 MHz ] Small-Signal Current Gain [ IC= 0.5 Adc, VCE=4.0 Vdc, f=50kHz] Output Capacitance (VCB=10V,IE=0,f=1.0MHz) * * fT 10 hfe 20 COB Indicates within JEDEC Registration Data. (1) Pulse Test : Pulse Width <300s , Duty Cycle < 2.0% MHz 250 pF