SILICON PLASTIC POWER TRANSISTOR
NPN 2N6292
7A 40W
Technical Data
…designed for use in general-purpose switching and amplifier applications.
F DC Current Gain - h FE = 30-150 @ IC = 2.0Adc
F Collector-Emitter Sustaining Voltage – VCEO(sus) = 70 Vdc (Min)
F TO-220 Package
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector- Emitter Voltage V CEO 70 Vdc
Collector – Base Voltage V CB 80 Vdc
Emitter Base Voltage V EB 5 Vdc
Collector Current – Continuos
Peak I C 7
10 Adc
Base Current I B3 Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°CPD 40
0.32 Watts
W/°C
Operating and Storage junction
Temperature Range Tj,Tstg -65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max. Unit
Thermal resistance junction to case R thjc 3.125 °C/W
ELECTRICAL CHARACTERISTICS :[ Tc = 25 °C unless otherwise noted ]
Characteristic Symbol Min Typ Max Unit
* OFF CHARACTERISTICS :
Collector–Emitter Sustaining Voltage (1)
[ Ic =100 mAdc, IB = 0 ] VCEO(sus) 70 Vdc
Collector Cutoff Current
[ VCE = 60 Vdc, IB = 0 ] ICE0 1 mAdc
Collector Cutoff Current
[ VCE = 80 Vdc,VBE(off) = 1.5 Vdc ]
[ VCE =70 Vdc, VBE(off) = 1.5 Vdc ,
Tc = 150 °C ]
ICEX 100
2
µAdc
mAdc
Emitter Cutoff Current
[ VBE=5.0 Vdc , Ic = 0 ] IEBO 1mAdc
* ON CHARACTERISTICS (1):
DC Current Gain
[ Ic = 2.0 Adc , VCE = 4.0 Vdc ]
[ Ic = 7 Adc , VCE = 4.0 Vdc ]
hFE 30
2.3 150
Collector-Emitter Saturation Voltage
[ Ic = 7Adc , IB = 3 Adc ) VCE(sat) 3.5 Vdc
Base-Emitter on Voltage
[ Ic =7.0 Adc , VCE= 4.0. VDC ] VBE(on) 3.0 Vdc
DYNAMIC CHARACTERISTICS :
Current Gain – Bandwidth Product
[Ic=0.5Adc,VCE=4Vdc,ftest=1.0 MHz ] fT10 MHz
Small-Signal Current Gain
[ IC= 0.5 Adc, VCE=4.0 Vdc, f=50kHz] hfe 20
Output Capacitance
(VCB=10V,IE=0,f=1.0MHz) COB 250 pF
• Indicates within JEDEC Registration Data.
• (1) Pulse Test : Pulse Width <300µs , Duty Cycle < 2.0%