TPH3R003PL MOSFETs Silicon N-channel MOS (U-MOS-H) TPH3R003PL 1. Applications * High-Efficiency DC-DC Converters * Switching Voltage Regulators * Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 13 nC (typ.) (3) Small output charge: Qoss = 24 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.2 m (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.1 to 2.1 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance Start of commercial production (c)2016 Toshiba Corporation 1 2016-07 2016-10-19 Rev.1.0 TPH3R003PL 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Drain-source voltage Gate-source voltage Rating Unit V VDSS 30 (Note 1) VGSS 20 Drain current (DC) ( Tc = 25 ) (Note 2) ID 88 Drain current (DC) ( Silicon limit ) (Note 2), (Note 3) ID 134 Drain current (pulsed) ( t = 100 s ) (Note 2) IDP 200 Power dissipation ( Tc = 25 ) PD 90 A W Power dissipation (Note 4) PD 1.8 Power dissipation (Note 5) PD 0.83 Single-pulse avalanche energy (Note 6) EAS 30 mJ Single-pulse avalanche current (Note 6) IAS 88 A Channel temperature Tch 175 Storage temperature Tstg -55 to 175 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. Thermal Characteristics Characteristics Symbol Max Unit /W Channel-to-case thermal resistance ( Tc = 25 ) Rth(ch-c) 1.66 Channel-to-ambient thermal resistance ( Ta = 25 ) (Note 4) Rth(ch-a) 83 Channel-to-ambient thermal resistance ( Ta = 25 ) (Note 5) Rth(ch-a) 180 Note 1: +20 V/-16 V ensured at DC condition. -20 V ensured at pulse condition (duty 5 %). Note 2: Ensure that the channel temperature does not exceed 175 . Note 3: Limited 88 A by package capability. Note 4: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 5: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 6: VDD = 24 V, Tch = 25 (initial), L = 3.0 H, IAS = 88 A Fig. 5.1 Device Mounted on a Glass-Epoxy Board (a) Note: Fig. 5.2 Device Mounted on a Glass-Epoxy Board (b) This transistor is sensitive to electrostatic discharge and should be handled with care. (c)2016 Toshiba Corporation 2 2016-10-19 Rev.1.0 TPH3R003PL 6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified) Characteristics Symbol Gate leakage current IGSS VGS = 20 V, VDS = 0 V Drain cut-off current Drain-source breakdown voltage Drain-source breakdown voltage (Note 7) Min Typ. Max Unit 0.1 A IDSS VDS = 30 V, VGS = 0 V 10 V(BR)DSS ID = 10 mA, VGS = 0 V 30 V(BR)DSX ID = 10 mA, VGS = -20 V 15 Vth VDS = 10 V, ID = 0.3 mA 1.1 2.1 VGS = 4.5 V, ID = 44 A 2.9 4.2 VGS = 10 V, ID = 44 A 2.2 3.0 Gate threshold voltage Drain-source on-resistance Test Condition RDS(ON) V m Note 7: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drainsource breakdown voltage is lowered in this mode. 6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified) Characteristics Input capacitance Symbol Ciss Test Condition VDS = 15 V, VGS = 0 V, f = 1 MHz Min Typ. Max Unit 2940 3825 pF Reverse transfer capacitance Crss 88 165 Output capacitance Coss 850 Gate resistance rg 1.0 1.5 Switching time (rise time) tr See Figure 6.2.1 6.3 ns Switching time (turn-on time) ton 18 tf 5.9 toff 36 Switching time (fall time) Switching time (turn-off time) VDD 15 V VGS = 0 V/ 10 V ID = 44 A RL = 0.34 RGG = 4.7 RGS = 4.7 Duty 1 %, tw = 10 s Fig. 6.2.1 Switching Time Test Circuit 6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified) Characteristics Total gate charge (gate-source plus gate-drain) Symbol Qg Gate-source charge 1 Qgs1 Gate-drain charge Qgd Gate switch charge QSW Output charge Qoss (c)2016 Toshiba Corporation Test Condition Min Typ. Max Unit VDD 15 V, VGS = 10 V, ID = 44 A 50 nC VDD 15 V, VGS = 4.5 V, ID = 44 A 24 VDD 15 V, VGS = 10 V, ID = 44 A 10 7.8 13 24 VDS = 15 V, VGS = 0 V, f = 1 MHz 3 2016-10-19 Rev.1.0 TPH3R003PL 6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified) Characteristics Reverse drain current (pulsed) Symbol Min Typ. Max Unit IDRP (t = 100 s) 200 A VDSF IDR = 88 A, VGS = 0 V -1.2 V Reverse recovery time trr 34 ns Qrr IDR = 22 A, VGS = 0 V, -dIDR/dt = 100 A/s Reverse recovery charge 25 nC Diode forward voltage (Note 8) Test Condition Note 8: Ensure that the channel temperature does not exceed 175 . 7. Marking Fig. 7.1 Marking (c)2016 Toshiba Corporation 4 2016-10-19 Rev.1.0 TPH3R003PL 8. Characteristics Curves (Note) Fig. 8.1 ID - VDS Fig. 8.2 ID - VDS Fig. 8.3 ID - VGS Fig. 8.4 VDS - VGS Fig. 8.5 RDS(ON) - ID Fig. 8.6 IDR - VDS (c)2016 Toshiba Corporation 5 2016-10-19 Rev.1.0 TPH3R003PL Fig. 8.7 V(BR)DSS - Ta Fig. 8.8 Vth - Ta Fig. 8.9 RDS(ON) - Ta Fig. 8.10 Dynamic Input/Output Characteristics Fig. 8.11 Capacitance - VDS Fig. 8.12 Qoss - VDS (c)2016 Toshiba Corporation 6 2016-10-19 Rev.1.0 TPH3R003PL Fig. 8.13 rth - tw (Guaranteed Maximum) Fig. 8.14 PD - Ta (Guaranteed Maximum) Fig. 8.15 PD - Tc (Guaranteed Maximum) Fig. 8.16 Safe Operating Area (Guaranteed Maximum) Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. (c)2016 Toshiba Corporation 7 2016-10-19 Rev.1.0 TPH3R003PL Package Dimensions Unit: mm Weight: 0.069 g (typ.) Package Name(s) TOSHIBA: 2-5Q1S Nickname: SOP Advance (c)2016 Toshiba Corporation 8 2016-10-19 Rev.1.0 TPH3R003PL RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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