Order this document by MRF5003/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N-Channel Enhancement-Mode The MRF5003 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 Volt and 12.5 Volt mobile, portable, and base station FM equipment. 3.0 W, 7.5 V, 512 MHz N-CHANNEL BROADBAND RF POWER FET * Guaranteed Performance at 512 MHz, 7.5 Volts Output Power = 3.0 Watts Power Gain = 9.5 dB Efficiency = 45% * Characterized with Series Equivalent Large-Signal Impedance Parameters * S-Parameter Characterization at High Bias Levels * Excellent Thermal Stability * All Gold Metal for Ultra Reliability * Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 512 MHz, 2.0 dB Overdrive * Suitable for 12.5 Volt Applications * True Surface Mount Package * Available in Tape and Reel by Adding R1 Suffix to Part Number. R1 Suffix = 500 Units per 16 mm, 7 inch Reel. * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. CASE 430-01, STYLE 2 MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Rating VDSS 36 Vdc Drain-Gate Voltage (RGS = 1.0 Meg Ohm) VDGR 36 Vdc VGS 20 Vdc Drain Current -- Continuous ID 1.7 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 12.5 0.07 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Symbol Max Unit RJC 14 C/W Gate-Source Voltage Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 6 RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 MRF5003 1 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Symbol Min Typ Max Unit Drain-Source Breakdown Voltage (VGS = 0, ID = 2.5 mAdc) V(BR)DSS 36 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 15 Vdc, VGS = 0) IDSS -- -- 1.0 mAdc Gate-Source Leakage Current (VGS = 20 Vdc, VDS = 0) IGSS -- -- 1.0 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 5.0 mAdc) VGS(th) 1.25 2.25 3.5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 0.5 Adc) VDS(on) -- -- 0.375 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 0.5 Adc) gfs 0.6 -- -- mho Input Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1.0 MHz) Ciss -- 16.5 -- pF Output Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1.0 MHz) Coss -- 37 -- pF Reverse Transfer Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1.0 MHz) Crss 3.5 4.4 5.4 pF 9.5 -- 10.5 15 -- -- 45 -- 50 55 -- -- Characteristic OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture) Common-Source Amplifier Power Gain (VDD = 7.5 Vdc, Pout = 3.0 W, IDQ = 50 mA) Drain Efficiency (VDD = 7.5 Vdc, Pout = 3.0 W, IDQ = 50 mA) MRF5003 2 Gps f = 512 MHz f = 175 MHz dB h f = 512 MHz f = 175 MHz % MOTOROLA RF DEVICE DATA VGG C10 B1 R3 C12 C11 VDD C13 C14 R4 C15 R2 RF Z12 OUTPUT L2 RF INPUT Z1 Z2 Z3 C4 Z4 C5 Z5 Z7 L1 Z6 Z8 D.U.T. C2 C1 C3 Z9 Z10 C6 C7 Z11 C8 C9 R1 C1, C3, C7, C8 0 to 20 pF Johanson C2, C9 56 pF, 100 mil Chip C4 10 pF, 100 mil Chip C5 47 pF, Miniature Clamped Mica Capacitor C6 22 pF, 100 mil Chip C10, C15 10 F, 50 V, Electrolytic C11, C14 0.1 F, Capacitor C12 1000 pF, 100 mil Chip C13 160 pF, 100 mil Chip R1 35 , 1/4 W Carbon R2 30 , 0.1 W Chip R3 1.0 k, 0.1 W Chip R4 1.0 M, 1/4 W Carbon B1 Fair Rite Products Short Ferrite Bead (2743021446) Board -- Glass Teflon, 31 mils Note: Plated ceramic part locators (0.1 x 0.15) soldered onto Z6 and Z7. Z1 0.350 x 0.08 Microstrip Z2 0.190 x 0.08 Microstrip Z3 0.800 x 0.08 Microstrip Z4 0.380 x 0.08 Microstrip Z5 0.150 x 0.08 Microstrip Z6 0.285 x 0.08 Microstrip Z7 0.340 x 0.08 Microstrip Z8 0.070 x 0.08 Microstrip Z9 0.280 x 0.08 Microstrip Z10 0.840 x 0.08 Microstrip Z11 0.180 x 0.08 Microstrip Z12 0.600 x 0.08 Microstrip L1 7 Turns, 0.076 ID, #24 AWG Enamel L2 5 Turns, 0.126 ID, #20 AWG Enamel Input/Output Connectors -- Type N Figure 1. 512 MHz Narrowband Test Circuit TYPICAL CHARACTERISTICS 5 10 f = 400 MHz P out , OUTPUT POWER (WATTS) P out , OUTPUT POWER (WATTS) f = 400 MHz 4 470 MHz 520 MHz 3 2 VDD = 7.5 V IDQ = 50 mA 1 0 8 470 MHz 520 MHz 6 4 VDD = 12.5 V IDQ = 50 mA 2 0 0 100 200 300 400 500 0 100 200 300 400 500 Pin, INPUT POWER (MILLIWATTS) Pin, INPUT POWER (MILLIWATTS) Figure 2. Output Power versus Input Power Figure 3. Output Power versus Input Power MOTOROLA RF DEVICE DATA MRF5003 3 TYPICAL CHARACTERISTICS 10 Pin = 300 mW f = 400 MHz ID = 50 mA 8 P out , OUTPUT POWER (WATTS) P out , OUTPUT POWER (WATTS) 10 200 mW 6 100 mW 4 2 0 8 10 12 200 mW 4 100 mW 2 14 6 8 10 12 14 VDD, SUPPLY VOLTAGE VDD, SUPPLY VOLTAGE Figure 4. Output Power versus Supply Voltage Figure 5. Output Power versus Supply Voltage 5 f = 520 MHz ID = 50 mA 8 P out , OUTPUT POWER (WATTS) 10 P out , OUTPUT POWER (WATTS) 6 0 6 Pin = 300 mW 6 200 mW 4 100 mW 2 0 VDD = 7.5 V Pin = 0.3 W f = 470 MHz 4 3 2 TYPICAL DEVICE SHOWN VGS(th) = 2.4 V 1 0 6 8 10 12 14 0 1 2 3 4 5 VDD, SUPPLY VOLTAGE VGS, GATE-SOURCE VOLTAGE (VOLTS) Figure 6. Output Power versus Supply Voltage Figure 7. Output Power versus Gate Voltage 1000 125 VDS = 10 V 800 VGS = 0 V f = 1.0 MHz 100 C, CAPACITANCE (pF) I D, DRAIN CURRENT (MILLIAMPS) Pin = 300 mW f = 470 MHz ID = 50 mA 8 600 400 75 50 Coss 200 25 Ciss 0 0 Crss 0 1 2 3 4 5 0 2 4 6 8 10 12 VGS, GATE-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-SOURCE VOLTAGE (VOLTS) Figure 8. Drain Current versus Gate Voltage (Typical Device Shown) Figure 9. Capacitance versus Voltage MRF5003 4 14 MOTOROLA RF DEVICE DATA 1.04 1.02 ID, DRAIN CURRENT (AMPS) VGS, GATE-SOURCE VOLTAGE (NORMALIZED) 2 1.06 1.00 IDQ = 150 mA 0.98 0.96 75 mA 0.94 0.92 0.90 VDD = 12.5 V 1.5 TC = 25C 1 0.5 25 mA 0.88 0.86 -25 0 1 TC, CASE TEMPERATURE (C) 10 36 V VDS, DRAIN SOURCE VOLTAGE (VOLTS) Figure 10. Gate-Source Voltage versus Case Temperature Figure 11. Maximum Rated Forward Biased Safe Operating Area 0 25 75 50 100 125 150 100 VDD = 7.5 V, IDQ = 50 mA, Pout = 3.0 W 520 MHz 460 MHz ZOL* f = 400 MHz 520 MHz Zin f MHz Zin Ohms ZOL* Ohms 400 2.8 - j9.2 3.6 - j1.7 430 2.7 - j8.5 3.3 - j1.5 460 2.5 - j7.8 2.7 - j1.1 490 2.0 - j7.2 2.5 - j0.8 520 1.3 - j6.5 2.4 - j0.5 Zin = Conjugate of source impedance with parallel 35 Zin = resistor and 47 pF capacitor in series with gate. 460 MHz Zo = 10 ZOL* = Conjugate of the load impedance at given output ZOL* = power, voltage, frequency, and D > 50%. f = 400 MHz Note: Zol* was chosen based on tradeoffs between gain, drain efficiency, and device stability. Figure 12. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF5003 5 Table 1. Common Source Scattering Parameters (VDS = 10 V) ID = 50 mA f S11 S21 S12 S22 MHz |S11| |S21| |S12| |S22| 50 0.69 - 90 10.8 117 0.07 - 29 0.74 - 119 100 0.58 - 120 6.0 96 0.08 - 10 0.78 - 146 200 0.58 - 139 3.0 75 0.08 -7 0.81 - 161 300 0.64 - 147 1.9 61 0.07 - 16 0.84 - 166 400 0.70 - 152 1.3 50 0.06 - 21 0.86 - 169 500 0.75 - 157 0.99 41 0.05 - 24 0.88 - 172 700 0.82 - 165 0.61 28 0.03 - 15 0.92 - 176 850 0.86 - 171 0.45 21 0.02 - 13 0.94 - 179 1000 0.89 - 176 0.34 16 0.02 - 47 0.95 - 178 ID = 500 mA f S11 S21 S12 S22 MHz |S11| |S21| |S12| |S22| 50 0.76 - 124 15.0 109 0.04 23 0.76 - 151 100 0.72 - 150 7.9 94 0.04 12 0.81 - 165 200 0.72 - 163 4.0 80 0.04 6 0.83 - 172 300 0.73 - 168 2.6 71 0.04 5 0.84 - 175 400 0.75 - 171 1.9 62 0.04 7 0.85 - 176 500 0.77 - 173 1.5 55 0.03 12 0.86 - 178 700 0.81 - 177 0.97 42 0.03 29 0.89 - 180 850 0.84 - 180 0.75 35 0.03 44 0.90 - 178 1000 0.86 - 177 0.60 29 0.04 55 0.92 - 176 ID = 1.0 A f S11 S21 S12 S22 MHz |S11| |S21| |S12| |S22| 50 0.80 - 125 14.6 110 0.04 - 23 0.75 - 155 100 0.76 - 150 7.8 95 0.04 - 10 0.81 - 167 200 0.76 - 164 3.9 81 0.04 -1 0.83 - 173 300 0.77 - 169 2.6 71 0.04 -3 0.84 - 175 400 0.79 - 172 1.9 63 0.03 -5 0.85 - 176 500 0.80 - 174 1.4 56 0.03 -5 0.86 - 177 700 0.83 - 178 0.95 43 0.03 -1 0.88 - 179 850 0.85 - 179 0.73 35 0.02 -9 0.90 - 179 1000 0.87 - 177 0.58 28 0.02 - 22 0.91 - 178 MRF5003 6 MOTOROLA RF DEVICE DATA R4 R3 VDD C13 D1 B1 C15 C16 R2 C12 C10 RF INPUT Z1 Z2 Z3 C14 C11 Z4 Z5 R1 Z6 Z7 D.U.T. C1 C1, C9 C2 C3 C4 C5 C6 C7 C8 C10, C15 C11, C16 C12 B1 C2 L1 Z8 C5 Z9 C6 Z10 Z11 C7 C8 RF Z13 OUTPUT Z12 C9 C4 C3 100 pF 100 mil Chip 16 pF, 100 mil Chip 24 pF, 100 mil Chip 68 pF, 100 mil Chip 51 pF, 100 mil Chip 39 pF, 100 mil Chip 6.2 pF, 100 mil Chip 9.1 pF, 100 mil Chip 39000 pF, 100 mil Chip 10 F, 50 V Electrolytic 10000 pF, 100 mil Chip Fair Rite Products Short Ferrite Bead (2743021446) C13 0.1 F, 100 mil Chip C14 160 pF, 100 mil Chip R1 43 , 0.1 W Chip Resistor R2 1000 , 0.1 W Chip Resistor R3 10 k Potentiometer R4 3000 , 0.1 W Chip Resistor L1 5 Turns, 0.126 ID, #20 AWG Enamel Z1 to Z13 See Photomaster D1 1N4734 Motorola Zener Board -- G10, 1/32 Input/Output Connectors -- SMA Figure 13. Schematic of Broadband Demonstration Amplifier MOTOROLA RF DEVICE DATA MRF5003 7 f = 400 MHz 470 MHz 4 3 2 VDD = 7.5 V IDQ = 50 mA 1 60 55 4 50 Po 45 3 40 35 2 30 VSWR 1.75 1 1.50 1.25 0 0 200 400 600 1000 800 1200 0 400 410 420 430 440 450 460 Pin, INPUT POWER (MILLIWATTS) f, FREQUENCY (MHz) Figure 14. Output Power versus Input Power Figure 15. Output Power, Drain Efficiency and VSWR versus Frequency VSWR 5 P out , OUTPUT POWER (WATTS) P out , OUTPUT POWER (WATTS) 5 , DRAIN EFFICIENCY (%) PERFORMANCE CHARACTERISTICS OF BROADBAND DEMONSTRATION AMPLIFIER 1.00 470 P out , OUTPUT POWER (WATTS) 5 VDD = 7.5 V Pin = 0.3 W 4 f = 400 MHz 470 MHz 3 2 TYPICAL DEVICE SHOWN VGS(th) = 2.4 V 1 0 0 1 2 3 4 5 VGS, GATE-SOURCE VOLTAGE (VOLTS) Figure 16. Output Power versus Gate Voltage MRF5003 8 MOTOROLA RF DEVICE DATA DESIGN CONSIDERATIONS The MRF5003 is a common-source, RF power, N-Channel enhancement mode, Metal-Oxide Semiconductor Field- Effect Transistor (MOSFET). Motorola RF MOSFETs feature a vertical structure with a planar design. Motorola Application Note AN211A, "FETs in Theory and Practice", is suggested reading for those not familiar with the construction and characteristics of FETs. This surface mount packaged device was designed primarily for VHF and UHF power amplifier applications. Manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. The major advantages of RF power MOSFETs include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to-source (C gs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from drain-to-source (C ds). These capacitances are characterized as input (C iss), output (C oss) and reverse transfer (C rss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The C iss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case, the numbers are lower. However, neither method represents the actual operating conditions in RF applications. DRAIN Cgd GATE Cds Cgs Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd SOURCE DRAIN CHARACTERISTICS One critical figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, RDS(on), occurs in the linear region of the output characteristic and is specified at a specific gate-source voltage and drain current. The drain-source voltage under these conditions is termed V DS(on). For MOSFETs, V DS(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. MOTOROLA RF DEVICE DATA The input resistance is very high -- on the order of 109 -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate-to-source threshold voltage, V GS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated V GS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended with appropriate RF decoupling. Using a resistor to keep the gate-to-source impedance low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate-drain capacitance. If the gate-to-source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate-threshold voltage and turn the device on. DC BIAS Since the MRF5003 is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. See Figure 8 for a typical plot of drain current versus gate voltage. RF power FETs operate optimally with a quiescent drain current (I DQ), whose value is application dependent. The MRF5003 was characterized at I DQ = 50 mA, which is the suggested value of bias current for typical applications. For special applications such as linear amplification, I DQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of the MRF5003 may be controlled from its rated value down to zero (negative gain) with a low power dc control signal, thus facilitating applications such as manual gain control, ALC/AGC and modulation systems. Figure 16 is an example of output power variation with gate-source bias voltage. This characteristic is very dependent on frequency and load line. MOUNTING The specified maximum thermal resistance of 14C/W assumes a majority of the 0.100 x 0.200 source contact on the back side of the package is in good contact with an appropriate heat sink. In the test fixture shown in Figure 1, the device is clamped directly to a copper pedestal. In the demonstration amplifier, the device was mounted on top of the G10 circuit board and heat removal was accomplished through several solder filled plated through holes. As with all RF power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. MRF5003 9 shunt resistive loading, or output to input feedback. Different stabilizing techniques were applied to the test fixture and demonstration amplifiers. The RF test fixture implements a parallel resistor and capacitor in series with the gate while the demonstration amplifier utilizes a 43 shunt resistor from gate to ground. Both circuits have a load line selected for a higher efficiency, lower gain, and more stable operating region. Two port stability analysis with the MRF5003 S-parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Motorola Application Note AN215A, "RF Small-Signal Design Using Two-Port Parameters", for a discussion of two port network theory and stability. AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for the MRF5003. For examples see Motorola Application Note AN721, "Impedance Matching Networks Applied to RF Power Transistors". Both small-signal S-parameters and large-signal impedances are provided. While the S-parameters will not produce an exact design solution for high power operation, they do yield a good first approximation. This is an additional advantage of RF power MOSFETs. Since RF power MOSFETs are triode devices, they are not unilateral. This coupled with the very high gain of the MRF5003 yield a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input PACKAGE DIMENSIONS EEEEE EEEEE EEEEE EEEEE EEEEE EEEEE EEEEE EEEEE EEEEE EE EE EE EE EE EE EE C 2 3 A N EEE EEE EEEEEE EEE EEEEEE EEE EEEEEE EEEEEE EEEEEE EEE EEEEEE EEE EEEEEE EEE EEE SEATING PLANE 1 E R F S 2 G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3 D 1 L B STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE DIM A B C D E F G L N R S INCHES MIN MAX 0.260 0.270 0.200 0.210 0.090 0.104 0.040 0.050 0.022 0.028 0.015 0.025 0.005 0.015 0.100 0.110 0.226 0.236 0.166 0.176 0.025 0.035 MILLIMETERS MIN MAX 6.60 6.86 5.08 5.33 2.29 2.64 1.02 1.27 0.56 0.71 0.38 0.64 0.13 0.38 2.54 2.79 5.74 5.99 4.22 4.47 0.64 0.89 CASE 430-01 ISSUE O Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 MRF5003 10 *MRF5003/D* MRF5003/D MOTOROLA RF DEVICE DATA