FAIRCHIL& SEMICON TOS MMBT4126 2N4126 SOT-23 B Mark: ZF PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents to 10 pA as a switch and to 100 mA as an amplifier. Sourced from Process 66. See 2N3906 for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise noted Discrete POWER & Signal Technologies Symbol Parameter Value Units Voeo Collector-Emitter Voltage 25 Vv Voso Collector-Base Voltage 25 Vv VeBo Emitter-Base Voltage 4.0 Vv Io Collector Current - Continuous 200 mA Ty, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA= 25C unless otherwise noted Symbol Characteristic Max Units 2N4126 *MMBT4126 Pp Total Device Dissipation 625 350 mW Derate above 25C 5.0 2.8 mW/C Rec Thermal Resistance, Junction to Case 83.3 CAW Resa Thermal Resistance, Junction to Ambient 200 357 CAW *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation OCLVLEININ / 9CL YNZElectrical Characteristics PNP General Purpose Amplifier TA = 25C unless otherwise noted (continued) Symbol Parameter Test Conditions Min Max | Units OFF CHARACTERISTICS Visriceo Collector-Emitter Breakdown Voltage Ilo = 1.0 mA, Ip = 0 25 Vv VeerjcBo Collector-Base Breakdown Voltage lo = 10 pA, Ie = 0 25 Vv Visr)eB0 Emitter-Base Breakdown Voltage le = 10 pA, Ic = 0 4.0 Vv leBo Collector Cutoff Current Ves = 20 V, le =0 50 nA leBo Emitter Cutoff Current Vep=3.0V, lo =0 50 nA ON CHARACTERISTICS* Hee DC Current Gain Io = 2.0 MA, Voce = 1.0 V 120 360 le = 50 mA, Vee = 1.0 V 60 Voe(sat Collector-Emitter Saturation Voltage lc = 50 mA, Ig = 5.0 mA 0.4 Vv Vee(saty Base-Emitter Saturation Voltage lo = 50 mA, Ip = 5.0 mA 0.95 Vv SMALL SIGNAL CHARACTERISTICS f Current Gain - Bandwidth Product lo = 10 mA, Voce = 20 V, 250 MHz f= 100 MHz Cibo Input Capacitance Veg = 0.5 V, Ip = 0, 10 pF f= 1.0 MHz Cob Collector-Base Capcitance Vop = 5.0 V, le = 0, 45 pF f= 100 kHz te Small-Signal Current Gain le = 2.0 mA, Vee = 10 V, 120 480 f= 1.0 kHz NF Noise Figure lo = 100 WA, Voz = 5.0 V, 4.0 dB Rs=1.0 kQ, f10 Hz to 15.7 kHz *Pulse Test: Pulse Width < 300 ys, Duty Cycle < 2.0% 92 LVLEINW / 9CLDNe