NTE5567, NTE5568, NTE5569, & NTE5571
Silicon Controlled Rectifier (SCR)
80 Amp (IT(RMS)), TO65 (TO208AC)
Features:
DHigh Current Rating
DExcellent Dynamic Characteristics
DSuperior Surge Capabilities
DStandard Package
Voltage Ratings and Electrical Characteristics: (TJ = +125C unless otherwise specified)
Parameter Symbol Test Conditions Values Unit
Maximum Repetitive Peak Forward & Reverse Voltage
NTE5567
VDRM,
VRRM
Note 1
200 V
NTE5568 600 V
NTE5569 1200 V
NTE5571 1600 V
Maximum Non−Repetitive Peak Voltage
NTE5567
VRSM Note 2
300 V
NTE5568 700 V
NTE5569 1300 V
NTE5571 1700 V
Peak Reverse & Off−State Current IDRM, IRRM 15 mA
Average On−State Current
NTE5567, NTE5568, NTE5569
IT(AV) 180 Sinusoidal
Conduction
TC = +94C50 A
NTE5571 TC = +90C50 A
RMS On−State Current IT(RMS) 80 A
Peak One−Cycle Non−Repetitive Surge Current ITSM t = 10ms, No Voltage Reapplied,
Sinusoidal Half Wave
1200 A
I2t for Fusing
NTE5567, NTE5568, NTE5569
I2t
t = 10ms,
Sinusoidal Half Wave
No Voltage
Reapplied 10.18 KA2s
NTE5571 7.21 KA2s
NTE5567, NTE5568, NTE5569 100% VRRM
Reapplied
7.20 KA2s
NTE5571 5.10 KA2s
Note 1. Units may be broken over non−repetitively in the off−state direction without damage, if di/dt
does not exceed 20A/s.
Note 2. For voltage pulses with tp 5ms.
Rev. 6−19
Voltage Ratings and Electrical Characteristics (Cont’d): (TJ = +125C unless otherwise specified)
Parameter Symbol Test Conditions Values Unit
I2t for Fusing
NTE5567, NTE5568, NTE5569
I2t
t = 0.1 to 10ms,
No Voltage Reapplied 10.18 KA2s
NTE5571 7.21 KA2s
Low Level Value of Threshold Voltage
NTE5567, NTE5568, NTE5569
IT(TO) 16.7% x x IT(AV) < I < x IT(AV) 0.94 V
NTE5571 1.02 V
High Level Value of Threshold Voltage
NTE5567, NTE5568, NTE5569
IT(TO)2 x IT(AV) < I < 20 x x IT(AV) 1.08 V
NTE5571 1.17 V
Low Level Value of On−State Slope Resistance
NTE5567, NTE5568, NTE5569
rT1 16.7% x x IT(AV) < I <20 x x IT(AV) 4.08 m
NTE5571 4.78 m
High Level Value of On−State Slope Resistance
NTE5567, NTE5568, NTE5569
rT2 x IT(AV) < I < 20 x x IT(AV) 3.34 m
NTE5571 3.97 m
Maximum On−State Voltage
NTE5567, NTE5568, NTE5569
VTM Ipk = 157A, TJ = +25C1.60 V
NTE5571 1.78 V
Maximum Holding Current IHTJ = +25C, Anode Supply 22V,
Resistive Load, Initial IT = 2A
200 mA
Latching Current ILAnode Supply 6V, Resistive Load 400 mA
Maximum Rate of Rise of Turned−On Current
NTE5567, NTE5568,
di/dt
VDM = Rated VDRM, Gate Pulse = 20V,
15, tp = 6s, tr = 0.1s Max,
ITM = (2 x Rated di/dt) A
200 A/s
NTE5569, NTE5571 100 A/s
Typical Delay Time tdTC = +25C, VDM = Rated VDRM, DC
Resistive Circuit, Gate Pulse = 10V,
15 Source, tp = 20s
0.9 s
Typical Turn−Off Time tqTC = +125C, ITM = 50A, Reapplied
dv/dt = 20V/s, dir/dt = 10A/s,
VR = 50V
110 s
Maximum Critical Rate of Rise of
Off−State Voltage
dv/dt Linear to 100% Rated VDRM 200 V/s
Linear to 67% Rated VDRM 500 V/s
Maximum Peak Gate Power PG(AV) tp 5ms 10 W
Maximum Average Gate Power PGM 2.5 W
Maximum Peak Positive Gate Current IGM 2.5 A
Maximum Peak Positive Gate Voltage +VGM 10 V
Maximum Peak Negative Gate Voltage −VGM 10 V
DC Gate Current Required to Trigger IGT 6V, Anode−to−Cathode Applied 100 mA
DC Gate Voltage Required to Trigger VGT 6V, Anode−to−Cathode Applied,
TJ = +25C
2.5 V
DC Gate Current Not to Trigger IGD Rated VDRM, Anode−to−Cathode
Applied
5.0 mA
Note 1. Units may be broken over non−repetitively in the off−state direction without damage, if di/dt
does not exceed 20A/s.
Note 2. For voltage pulses with tp 5ms.
Voltage Ratings and Electrical Characteristics (Cont’d): (TJ = +125C unless otherwise specified)
Parameter Symbol Test Conditions Values Unit
DC Gate Voltage Not to Trigger VGD Rated VDRM, Anode−to−Cathode
Applied
0.2 V
Operating Junction Temperature Range TJ−40 to +125 C
Storage Temperature Range Tstg −40 to +125 C
Thermal Resistance, Junction−to−Case RthJC DC Operation 0.35 K/W
Thermal Resistance, Case−to−Heatsink RthCS Mounting Surface Smooth, Flat, and
Greased
0.25 K/W
Mounting Torque TNon−Lubricated Threads 2.8 Nm
Note 1. Units may be broken over non−repetitively in the off−state direction without damage, if di/dt
does not exceed 20A/s.
Note 2. For voltage pulses with tp 5ms.
.667
(16.95)
Dia Max
.675 (17.15)
Across Flats
Anode
1/4−28 UNF−2A
Cathode
.136 (3.47) Dia
Gate
.067 (1.72) Dia
.250 (6.35)
.120 (3.04)
.208 (5.30)
Max
.422
(10.74)
Max
.494
(15.10)
Max
1.32
(33.60)
Max
.944
(24.0)
Max
