NTE5567, NTE5568, NTE5569, & NTE5571 Silicon Controlled Rectifier (SCR) 80 Amp (IT(RMS)), TO65 (TO208AC) Features: D High Current Rating D Excellent Dynamic Characteristics D Superior Surge Capabilities D Standard Package Voltage Ratings and Electrical Characteristics: (TJ = +125C unless otherwise specified) Parameter Values Unit 200 V NTE5568 600 V NTE5569 1200 V NTE5571 1600 V 300 V NTE5568 700 V NTE5569 1300 V NTE5571 1700 V 15 mA TC = +94C 50 A TC = +90C 50 A 80 A t = 10ms, No Voltage Reapplied, Sinusoidal Half Wave 1200 A t = 10ms, Sinusoidal Half Wave No Voltage Reapplied 10.18 KA2s 7.21 KA2s 100% VRRM Reapplied 7.20 KA2s 5.10 KA2s Maximum Repetitive Peak Forward & Reverse Voltage NTE5567 Maximum Non-Repetitive Peak Voltage NTE5567 Symbol VDRM, VRRM VRSM Peak Reverse & Off-State Current IDRM, IRRM Average On-State Current NTE5567, NTE5568, NTE5569 IT(AV) NTE5571 RMS On-State Current Peak One-Cycle Non-Repetitive Surge Current I2t for Fusing NTE5567, NTE5568, NTE5569 NTE5571 NTE5567, NTE5568, NTE5569 NTE5571 Test Conditions Note 1 Note 2 180 Sinusoidal Conduction IT(RMS) ITSM I2t Note 1. Units may be broken over non-repetitively in the off-state direction without damage, if di/dt does not exceed 20A/s. Note 2. For voltage pulses with tp 5ms. Rev. 6-19 Voltage Ratings and Electrical Characteristics (Cont'd): (TJ = +125C unless otherwise specified) Parameter I2t for Fusing NTE5567, NTE5568, NTE5569 Symbol I2t NTE5571 Low Level Value of Threshold Voltage NTE5567, NTE5568, NTE5569 IT(TO) Test Conditions Values Unit t = 0.1 to 10ms, No Voltage Reapplied 10.18 KA2s 7.21 KA2s 16.7% x x IT(AV) < I < x IT(AV) 0.94 V 1.02 V 1.08 V 1.17 V 4.08 m 4.78 m 3.34 m 3.97 m 1.60 V 1.78 V NTE5571 High Level Value of Threshold Voltage NTE5567, NTE5568, NTE5569 IT(TO)2 x IT(AV) < I < 20 x x IT(AV) NTE5571 Low Level Value of On-State Slope Resistance NTE5567, NTE5568, NTE5569 rT1 16.7% x x IT(AV) < I <20 x x IT(AV) NTE5571 High Level Value of On-State Slope Resistance NTE5567, NTE5568, NTE5569 rT2 x IT(AV) < I < 20 x x IT(AV) NTE5571 Maximum On-State Voltage NTE5567, NTE5568, NTE5569 VTM Ipk = 157A, TJ = +25C NTE5571 Maximum Holding Current IH TJ = +25C, Anode Supply 22V, Resistive Load, Initial IT = 2A 200 mA Latching Current IL Anode Supply 6V, Resistive Load 400 mA VDM = Rated VDRM, Gate Pulse = 20V, 15, tp = 6s, tr = 0.1s Max, ITM = (2 x Rated di/dt) A 200 A/s 100 A/s Maximum Rate of Rise of Turned-On Current NTE5567, NTE5568, di/dt NTE5569, NTE5571 Typical Delay Time td TC = +25C, VDM = Rated VDRM, DC Resistive Circuit, Gate Pulse = 10V, 15 Source, tp = 20s 0.9 s Typical Turn-Off Time tq TC = +125C, ITM = 50A, Reapplied dv/dt = 20V/s, dir/dt = 10A/s, VR = 50V 110 s Linear to 100% Rated VDRM 200 V/s Linear to 67% Rated VDRM 500 V/s tp 5ms 10 W Maximum Critical Rate of Rise of Off-State Voltage Maximum Peak Gate Power dv/dt PG(AV) Maximum Average Gate Power PGM 2.5 W Maximum Peak Positive Gate Current IGM 2.5 A Maximum Peak Positive Gate Voltage +VGM 10 V Maximum Peak Negative Gate Voltage -VGM 10 V DC Gate Current Required to Trigger IGT 6V, Anode-to-Cathode Applied 100 mA DC Gate Voltage Required to Trigger VGT 6V, Anode-to-Cathode Applied, TJ = +25C 2.5 V DC Gate Current Not to Trigger IGD Rated VDRM, Anode-to-Cathode Applied 5.0 mA Note 1. Units may be broken over non-repetitively in the off-state direction without damage, if di/dt does not exceed 20A/s. Note 2. For voltage pulses with tp 5ms. Voltage Ratings and Electrical Characteristics (Cont'd): (TJ = +125C unless otherwise specified) Parameter Symbol DC Gate Voltage Not to Trigger VGD Test Conditions Values Unit 0.2 V Rated VDRM, Anode-to-Cathode Applied Operating Junction Temperature Range TJ -40 to +125 C Storage Temperature Range Tstg -40 to +125 C Thermal Resistance, Junction-to-Case RthJC DC Operation 0.35 K/W Thermal Resistance, Case-to-Heatsink RthCS Mounting Surface Smooth, Flat, and Greased 0.25 K/W Non-Lubricated Threads 2.8 Nm Mounting Torque T Note 1. Units may be broken over non-repetitively in the off-state direction without damage, if di/dt does not exceed 20A/s. Note 2. For voltage pulses with tp 5ms. Gate .067 (1.72) Dia .250 (6.35) Cathode .120 (3.04) .136 (3.47) Dia .667 (16.95) Dia Max .494 (15.10) Max .944 (24.0) Max 1.32 (33.60) Max .208 (5.30) Max .422 (10.74) Max Anode 1/4-28 UNF-2A .675 (17.15) Across Flats