BUX98APW
HIGH VOLTAGE NPN POWER TRANSISTOR
■STMicroelectronics PREFERRED
SALESTYPE
■N PN T R ANSIST O R
■H IGH VO LT AGE C A PABI LIT Y
■HIGH CURRE NT CAP ABI LITY
■FAST SWI T CHI NG SPEED
APPLIC A TION S
■HIGH FREQUENCY AND EFFICENCY
CONVERTERS
■LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIP TION
The BUX98APW is a silicon Multiepitaxial Mesa
NPN transistor in TO-247 plastic package. It is
intended for use in industrial applications from
single and three-phase mains operation. INTERNAL SCHEMATIC DIAGRAM
February 2002
123
TO-247
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCER Collector-Emitter Voltage (RBE = ≤ 10 Ω)1000 V
VCES Collector-Ba se Voltage (VBE = 0) 1000 V
VCEO Collector-Emitter Voltage (IB = 0) 450 V
VEBO Emitter-Base Voltage (IC = 0) 7 V
ICCollector Current 24 A
ICM Collector Peak Current (tp < 5 ms) 36 A
IBBase Current 5 A
IBM Base Peak Current (tp < 5 ms) 8 A
Ptot Total Power Dissipation at Tcase < 25 oC200 W
Tstg Stora ge Te mperature -65 to 150 oC
TjMax Operating Junction Temperature 150 oC
®
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THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 0.63 oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICER Collecto r Cut-off
Current (RBE = 5 Ω)VCE = 1000 V
VCE = 1000 V TC = 125 oC200
2µA
mA
ICES Collecto r Cut-off
Current (VBE = 0 ) VCE = 1000 V
VCE = 1000 V TC = 125 oC200
2µA
mA
ICEO Collector Cut-off
Current (IB = 0) VCE = 450 V 2 mA
IEBO Emitter Cut-off Current
(IC = 0) VEB = 5 V 2 mA
V(BR)EBO Emitter-Base
Breakdown Voltage
(IC = 0)
IE = 100 mA 7 V
VCEO(sus)∗Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 200 mA L = 25 mH 450 V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 16 A IB = 3.2 A 1.2 V
VBE(sat)∗Base-Emitter
Saturation Voltage IC = 16 A IB = 3.2 A 1.5 V
ton
ts
tf
RESISTIVE LOAD
Turn-on Time
Storage Time
Fall Time
VCC = 150 V IC = 16 A
IB1 = - IB2 = 3.2 A 1
3
0.8
µs
µs
µs
∗ Pulsed: Pulse duration = 300 µs, duty cycle = 1.5 %
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 5.3 0.185 0.209
D 2.2 2.6 0.087 0.102
E 0.4 0.8 0.016 0.031
F 1 1.4 0.039 0.055
F3 2 2.4 0.079 0.094
F4 3 3.4 0.118 0.134
G 10.9 0.429
H 15.3 15.9 0.602 0.626
L 19.7 20.3 0.776 0.779
L3 14.2 14.8 0.559 0.582
L4 34.6 1.362
L5 5.5 0.217
M 2 3 0.079 0.118
P025P
TO-247 MECHANICAL DATA
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of use of such inform ation nor for any in fringe ment o f patents or other rig hts of th ird part ies which may re sult fro m its use . N o li cen se i s
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subject to change without notice. This publication supersedes and replaces all information previously supplie d. STMicroelectronics pr oducts
ar e not aut horized f or use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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