©2006 Fairchild Semiconductor Corporation
1
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FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5
FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers
tm
May 2006
FOD814 Series, FOD617 Series, FOD817 Series
4-Pin High Operating Temperature
Phototransistor Optocouplers
Features
■
AC input response (FOD814 only)
■
Applicable to Pb-free IR reflow soldering
■
Compact 4-pin package
■
Current transfer ratio in selected groups:
FOD617A: 40–80% FOD817: 50–600%
FOD617B: 63–125% FOD817A:80–160%
FOD617C:100–200% FOD817B: 130–260%
FOD617D:160–320% FOD817C:200–400%
FOD814: 20–300% FOD817D:300–600%
FOD814A: 50–150%
■
C-UL, UL and VDE approved
■
High input-output isolation voltage of 5000Vrms
■
Minimum BV
CEO
of 70V guaranteed
■
Higher operating temperatures (versus H11AXXX
counterparts)
Applications
FOD814 Series
■
AC line monitor
■
Unknown polarity DC sensor
■
Telephone line interface
FOD617 and FOD817 Series
■
Power supply regulators
■
Digital logic inputs
■
Microprocessor inputs
Description
The FOD814 consists of two gallium arsenide infrared
emitting diodes, connected in inverse parallel, driving a
silicon phototransistor output in a 4-pin dual in-line
package. The FOD617/817 Series consists of a gallium
arsenide infrared emitting diode driving a silicon
phototransistor in a 4-pin dual in-line package.
Functional Block Diagram
4
1
1ANODE, CATHODE
2
4
3CATHODE, ANODE
COLLECTOR
EMITTER
1
2
4
3 EMITTER
COLLECTORANODE
CATHODE
FOD814 FOD617/817
2
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FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5
FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers
Absolute Maximum Ratings
(T
A
= 25°C Unless otherwise specified.)
Symbol Parameter
Value Units
FOD814 FOD617/817
TOTAL DEVICE
T
STG
Storage Temperature -55 to +150 °C
T
OPR
Operating Temperature -55 to +105 -55 to +110 °C
T
SOL
Lead Solder Temperature 260 for 10 sec °C
P
TOT
Total Power Dissipation 200 mW
EMITTER
I
F
Continuous Forward Current ±50 50 mA
V
R
Reverse Voltage – 6
P
D
Power Dissipation
Derate above 100°C
70
1.7
mW
mW/°C
DETECTOR
V
CEO
Collector-Emitter Voltage 70 V
V
ECO
Emitter-Collector Voltage 6 6 (FOD817)
7 (FOD617)
V
I
C
Continuous Collector Current 50 mA
P
C
Collector Power Dissipation
Derate above 90°C
150
2.9
mW
mW/°C
3
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FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5
FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified.)
Individual Component Characteristics
Transfer Characteristics
(T
A
= 25°C Unless otherwise specified.)
*Typical values at T
A
= 25°C
Symbol Parameter Device Test Conditions Min. Typ.* Max. Unit
EMITTER
V
F
Forward Voltage FOD814 I
F
= ±20mA – 1.2 1.4 V
FOD617 I
F
= 60mA – 1.35 1.65
FOD817 I
F
= 20mA – 1.2 1.4
I
R
Reverse Leakage Current FOD617 V
R
= 6.0V – 0.001 10 µA
FOD817 V
R
= 4.0V – – 10
C
t
Te r minal Capacitance FOD814 V = 0, f = 1kHz – 50 250 pF
FOD617 V = 0, f = 1kHz – 30 250
FOD817 V = 0, f = 1kHz – 30 250
DETECTOR
I
CEO
Collector Dark Current FOD814 V
CE
= 20V, I
F
= 0 – – 100 nA
FOD617C/D V
CE
= 10V, I
F
= 0 – 1 100
FOD617A/B V
CE
= 10V, I
F
= 0 – 1 50
FOD817 V
CE
= 20V, I
F
= 0 – – 100
BV
CEO
Collector-Emitter Breakdown
Voltage
FOD814 I
C
= 0.1mA, I
F
= 0 70 – – V
FOD617 I
C
= 100µA, I
F
= 0 70 – –
FOD817 I
C
= 0.1mA, I
F
= 0 70 – –
BV
ECO
Emitter-Collector Breakdown
Voltage
FOD814 I
E
= 10µA, I
F
= 0 6 – – V
FOD617 I
E
= 10µA, I
F
= 0 7 – –
FOD817 I
E
= 10µA, I
F
= 0 6 – –
Symbol DC Characteristic Device Test Conditions Min. Typ.* Max. Unit
CTR Current Transfer
Ratio
FOD814 I
F
= ±1mA, V
CE
= 5V
(1)
20 – 300 %
FOD814A 50 – 150
FOD617A I
F
= 10mA, V
CE
= 5V
(1)
40 – 80
FOD617B 63 – 125
FOD617C 100 – 200
FOD617D 160 – 320
FOD617A I
F
= 1mA, V
CE
= 5V
(1)
13 – –
FOD617B 22 – –
FOD617C 34 – –
FOD617D 56 – –
FOD817 I
F
= 5mA, V
CE
= 5V
(1)
50 – 600
FOD817A 80 – 160
FOD817B 130 – 260
FOD817C 200 – 400
FOD817D 300 – 600
V
CE (sat)
Collector-Emitter
Saturation Voltage
FOD814 I
F
= ±20mA, I
C
= 1mA – 0.1 0.2 V
FOD617 I
F
= 10mA, I
C
= 2.5mA – – 0.4
FOD817 I
F
= 20mA, I
C
= 1mA – 0.1 0.2
4
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FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5
FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers
Transfer Characteristics
(Continued)
(T
A
= 25°C Unless otherwise specified.)
Isolation Characteristics
*Typical values at T
A
= 25°C
Notes:
1. Current Transfer Ratio (CTR) = I
C
/I
F
x 100%.
2. For test circuit setup and waveforms, refer to page 4.
3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
Symbol AC Characteristic Device Test Conditions Min. Typ.* Max. Unit
f
C
Cut-Off Frequency FOD814 V
CE
= 5V, I
C
= 2mA, R
L
= 100
Ω
,
-3dB
15 80 – kHz
t
r
Response Time (Rise) FOD814 V
CE
= 2 V, I
C
= 2mA, R
L
= 100
Ω
(2)
–418µs
FOD617
FOD817
t
f
Response Time (Fall) FOD814 – 3 18 µs
FOD617
FOD817
Symbol Characteristic Device Test Conditions Min. Typ.* Max. Units
V
ISO
Input-Output Isolation
Voltage
(3)
FOD814 f = 60Hz, t = 1 min,
I
I-O
≤
2µA
5000 Vac(rms)
FOD617
FOD817
R
ISO
Isolation Resistance FOD814 V
I-O
= 500VDC 5x10
10
1x10
11
—
Ω
FOD617
FOD817
CISO Isolation Capacitance FOD814 VI-O = 0, f = 1 MHz 0.6 1.0 pf
FOD617
FOD817
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FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5
FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers
Typical Electrical/Optical Characteristics (TA = 25°C Unless otherwise specified.)
0
1
2
3
4
5
6
COLLECTOR POWER DISSIPATION PC (mW)
Fig. 1 Collector Power Dissipation
vs. Ambient Temperature (FOD814)
FORWARD CURRENT IF (mA)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
Fig. 3 Collector-Emitter Saturation Voltage
vs. Forward Current
Fig. 5 Forward Current vs. Forward Voltage
(FOD617/817)
FORWARD VOLTAGE VF (V)
FORWARD CURRENT IF (mA)
FORWARD CURRENT IF (mA)
CURRENT TRANSFER RATIO CTR ( %)
Fig. 6 Current Transfer Ratio
vs. Forward Current
AMBIENT TEMPERATURE TA (°C)
15.012.510.07.55.02.50
V = 5V
Ta= 25°C
Ic = 0 .5 m A
1m A
3m A
Ta = 25°C
7m A
5m A
0
0.1 0.2 0.5 1 2 5 10 20 50 100
20
40
60
80
100
120
140
-40 -20 0 20 40 60 80 100 120
-55
0
50
100
150
200
COLLECTOR POWER DISSIPATION PC (mW)
Fig. 2 Collector Power Dissipation
vs. Ambient Temperature (FOD617/817)
AMBIENT TEMPERATURE TA (°C)
-40 -20 0 20 40 60 80 100 120
-55
0
50
100
150
200
0.5 1.0 1.5 2.0
T
A
= 110oC
75oC
50oC
25oC
0oC
-30oC
-55oC
0.1
1
10
100
FOD814
FOD617/817
Fig. 4 Forward Current vs. Forward Voltage
(FOD814)
FORWARD VOLTAGE VF (V)
FORWARD CURRENT IF (mA)
0.5 1.0 1.5 2.0
T
A
= 105oC
75oC
50oC
25oC
0oC
-30oC
-55oC
0.1
1
10
100
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FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5
FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers
Typical Electrical/Optical Characteristics (Continued) (TA = 25°C Unless otherwise specified.)
AMBIENT TEMPERATURE TA (°C)
Fig. 10 Collector-Emitter Saturation Voltage
vs. Ambient Temperature
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
LED POWER DISSIPATION PLED (mW)
-60 -40 -20 0 20 40 60 80 100 120
0.00
0.02
0.04
0.06
0.08
0.10
0.12
IF = 20mA
IC = 1mA
Fig. 11 LED Power Dissipation
vs. Ambient Temperature (FOD814)
AMBIENT TEMPERATURE TA (°C)
-40 -20 0 20 40 60 80 100 120-55
0
20
40
60
80
100
LED POWER DISSIPATION PLED (mW)
Fig. 12 LED Power Dissipation
vs. Ambient Temperature (FOD617/817)
AMBIENT TEMPERATURE TA (°C)
-40 -20 0 20 40 60 80 100 120-55
0
20
40
60
80
100
AMBIENT TEMPERATURE TA (°C)
RELATIVE CURRENT TRANSFER
RATIO (%)
Fig. 9 Relative Current Transfer Ratio
vs. Ambient Temperature
-60 -40 -20 0 20 40 60 80 100 120
I
F
= 1 mA
V
CE
= 5V
0
20
40
60
80
100
120
140
160 FOD814
IF = 5mA
VCE = 5V
FOD617/817
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (mA)
Fig. 7 Collector Current
vs. Collector-Emitter Voltage (FOD814)
Ta= 25°C
I = 30m A
Pc(M AX.)
5m A
10m A
1m A
F
20 m A
0102030405060708090100
0
10
20
30
40
50
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (mA)
Ta = 25°C
I IF = 30mA
Pc(MAX.)
5m A
10mA
20mA
30
25
20
15
10
5
0
0102030405060708090
Fig. 8 Collector Current vs.
Collector-Emitter Voltage (FOD617/817)
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FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5
FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers
Typical Electrical/Optical Characteristics (Continued) (TA = 25°C Unless otherwise specified.)
Test Circuit for Response Time Test Circuit for Frequency Response
Input R
Output
Input
R
DOutput
L
Vcc
td
tr tf
ts
90%
10% Output
RDL
R
Vcc
LOAD RESISTANCE RL (kΩ)
RESPONSE TIME (µs)
Fig. 13 Response Time
vs. Load Resistance
FREQUENCY f (kHz)
VOLTAGE GAIN AV (dB)
Fig. 14 Frequency Response
CE
V = 2 V
Ic = 2m A
Ta = 25°Ctr
tf
ts
td
R =10k
L1k 100
VCE = 2V
Ic = 2mA
Ta = 25°C
-20
0.1
0.1
0.2 0.5 1 2 5 10
0.2
0.5
1
2
5
10
20
50
100
0.2
-10
0
15 20.5 100010010
AMBIENT TEMPERATURE TA (°C)
Fig. 15 Collector Dark Current
vs. Ambient Temperature
COLLECTOR DARK CURRENT ICEO (nA)
-60 -40 -20 0 20 40 60 80 100 120
0.01
0.1
1
10
100
1000
10000
VCE = 20V
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FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5
FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers
Package Dimensions (Through Hole) Package Dimensions (Surface Mount)
Footprint Dimensions
SEATING PLANE
0.200 (5.10)
0.161 (4.10)
0.157 (4.00)
0.118 (3.00)
0.130 (3.30)
0.091 (2.30)
0.150 (3.80)
0.110 (2.80)
0.110 (2.79)
0.090 (2.29)
0.024 (0.60)
0.016 (0.40)
0.020 (0.51)
TYP
0.300 (7.62)
typ
0.010 (0.26)
0.276 (7.00)
0.236 (6.00)
0.312 (7.92)
0.288 (7.32)
SEATING PLANE
0.200 (5.10)
0.161 (4.10)
0.157 (4.00)
0.118 (3.00)
0.276 (7.00)
0.236 (6.00)
0.024 (0.60)
0.004 (0.10)
0.051 (1.30)
0.043 (1.10)
0.110 (2.79)
0.090 (2.29)
0.412 (10.46)
0.388 (9.86)
0.312 (7.92)
0.288 (7.32)
0.049 (1.25)
0.010 (0.26)
0.030 (0.76)
Lead Coplanarity 0.004 (0.10) MAX
1.5
2.54
1.3
9
SEATING PLANE
0.010 (0.26)
0.200 (5.10)
0.161 (4.10)
0.130 (3.30)
0.091 (2.30)
0.150 (3.80)
0.110 (2.80)
0.024 (0.60)
0.016 (0.40)
0.110 (2.79)
0.090 (2.29)
0.157 (4.00)
0.118 (3.00)
0.276 (7.00)
0.236 (6.00)
0.312 (7.92)
0.288 (7.32)
0.291 (7.40)
0.252 (6.40)
0.110 (2.80)
0.011 (1.80)
0.42 (10.66)
0.38 (9.66)
Package Dimensions
(0.4” Lead Spacing)
(Surface Mount)
Note:
All dimensions are in inches (millimeters).
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FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5
FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers
Ordering Information
Marking Information
Option Part Number Example Description
S FOD814S Surface Mount Lead Bend
SD FOD814SD Surface Mount; Tape and reel
W FOD814W 0.4" Lead Spacing
300 FOD814300 VDE Approved
300W FOD814300W VDE Approved, 0.4" Lead Spacing
3S FOD8143S VDE Approved, Surface Mount
3SD FOD8143SD VDE Approved, Surface Mount, Tape & Reel
1
2
6
4
3
5
Definitions
1Fairchild logo
2Device number
3VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4 One digit year code
5Two digit work week ranging from ‘01’ to ‘53’
6 Assembly package code
814
XVY
ZZ
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FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5
FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers
Carrier Tape Specifications
Note:
All dimensions are in millimeters.
Description Symbol Dimensions in mm (inches)
Tape wide W 16 ± 0.3 (.63)
Pitch of sprocket holes P04 ± 0.1 (.15)
Distance of compartment F
P2
7.5 ± 0.1 (.295)
2 ± 0.1 (.079)
Distance of compartment to compartment P112 ± 0.1 (.472)
Compartment A0 10.45 ± 0.1 (.411)
B0 5.30 ± 0.1 (.209)
K0 4.25 ± 0.1 (.167)
P2
P1
P01.75±0.1
0.3±0.05
Ø1.55±0.05
F
B0
A0
K0
W
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FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5
FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers
Lead Free Recommended IR Reflow Condition
Recommended Wave Soldering condition
Profile Feature Pb-Sn solder assembly Lead Free assembly
Preheat condition
(Tsmin-Tsmax / ts)
100°C ~ 150°C
60 ~ 120 sec
150°C ~ 200°C
60 ~120 sec
Melt soldering zone 183°C
60 ~ 120 sec
217°C
30 ~ 90 sec
Peak temperature (Tp) 240 +0/-5°C 260 +0/-5°C
Ramp-down rate 6°C/sec max. 6°C/sec max.
Profile Feature For all solder assembly
Peak temperature (Tp) Max 260°C for 10 sec
Time (sec)
ts (Preheat)
25°C
Temperature (°C)
Tsmin
Tsmax
Tp
Soldering zon
Ramp-down
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FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.5
FOD814 Series, FOD617 Series, FOD817 Series 4-Pin High Operating Temperature Phototransistor Optocouplers
Rev. I19
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDíS WORLDWIDE TERMS AND CONDITIONS,
SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILDíS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
ACEx™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FAST®
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench®
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
ScalarPump™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
TinyLogic®
TINYOPTO™
TruTranslation™
UHC™
UniFET™
UltraFET®
VCX™
Wire™
FACT Quiet Series™
Across the board. Around the world.™
The Power Franchise®
Programmable Active Droop™
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
