MCH6541
No.8949-1/5
Applications
•MOSFET gate drivers, relay drivers, lamp drivers, motor drivers.
Features
•Composite type with a PNP transistor and an NPN transistor contained in one package facilitating high-density mounting.
•Ultrasmall package permitting applied sets to be small and slim.
Specifications ( ) : PNP
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (--30)40 V
Collector-to-Emitter Voltage VCEO (--)30 V
Emitter-to-Base Voltage VEBO (--)5 V
Collector Current IC(--)700 mA
Collector Current (Pulse) ICP (--)3 A
Collector Dissipation PC
When mounted on ceramic substrate (600mm
2
✕0.8mm) 1unit
0.5 W
Total Power Dissipation PT
When mounted on ceramic substrate (600mm
2
✕0.8mm)
0.55 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Collector Cutoff Current ICBO VCB=(--)30V, IE=0A (--)100 nA
Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)100 nA
DC Current Gain hFE VCE=(--)2V, IC=(--10)50mA (200)300 (500)800
Gain-Bandwidth Product fTVCE=(--)2V, I C=(--)50mA (520)540 MHz
Output Capacitance Cob VCB=(--)10V, f=1MHz (4.7)3.3 pF
Marking : EP Continued on next page.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN8949
SANYO Semiconductors
DATA SHEET
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
s products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
22008EA TI IM TC-00001087
MCH6541 PNP / NPN Epitaxial Planar Silicon Transistors
Push-Pull Circuit Applications
MCH6541
No.8949-2/5
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)200mA, IB=(--)10mA
(--110)85 (--220)190
mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)200mA, IB=(--)10mA (--)0.9 (--)1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10μA, IE=0A (--30)40 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞(--)30 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10μA, IC=0A (--)5 V
T urn-On Time ton See specified Test Circuit. 35 ns
Storage T ime tstg See specified Test Circuit. (125)255 ns
Fall T ime tfSee specified Test Circuit. (25)40 ns
Package Dimensions Electrical Connection
unit : mm (typ)
7022A-012
Switching Time Test Circuit
56
1
4
23
1 : Emitter1 (PNP TR)
2 : Base1 (PNP TR)
3 : Collector2 (NPN TR)
4 : Emitter2 (NPN TR)
5 : Base2 (NPN TR)
6 : Collector1 (PNP TR)
Top view
1 : Emitter1 (PNP TR)
2 : Base1 (PNP TR)
3 : Collector2 (NPN TR)
4 : Emitter2 (NPN TR)
5 : Base2 (NPN TR)
6 : Collector1 (PNP TR)
SANYO : MCPH6
2.0
0.25
1.6
2.1
0.25
0.85
0.3
0.65
0.15
0 to 0.02
0.07
654
123
654
123
VRRB
VCC=12VVBE= --5V
++
50Ω
INPUT
OUTPUT
RL
220μF 470μF
PW=20μsIB1
D.C.≤1% IB2
IC=20IB1= --20IB2=300mA
For PNP, the polarity is reversed.
MCH6541
No.8949-3/5
[PNP] [NPN]
0
0
--200
--100
IC -- VCE
IT05049
--400
--300
--600
--500
--700
--200 --600--400 --800 --1000
--100 --500--300 --700 --900
IB=0μA
--500μA
--1mA
--2mA
--5mA
--
3mA
--
7mA
--10mA
--15mA
--40mA
--50mA
--
30mA
--20mA
--25mA
Collector-to-Emitter Voltage, VCE -- mV
Collector Current, IC -- mA
0
0
500
400
300
700
600
200
200
100
500 1000
800 900100 300 400 600 700
IC -- VCE
IT05082
IB=0μA
200μA
400μA
1mA
2mA
3mA
5mA
7mA
10mA
50mA
15mA
30mA 20mA
Collector-to-Emitter Voltage, VCE -- mV
Collector Current, IC -- mA
[PNP] [NPN]
[PNP] [NPN]
IT05051
3
100
hFE -- IC
--1.0 2357--10 23572357
--100 --1000
2
3
5
1000
7
5
7
VCE= --2V
Ta=75°C
25°C
--25
°
C
IT05054
--1.0
VCE(sat) -- IC
23 57
--10 23 57 23 57
--100 --1000
--1000
--100
2
3
5
7
2
3
5
7
--10
Ta=75°C
--25°C
25
°
C
IC / IB=20
Collector Current, IC -- mA
DC Current Gain, hFE
Collector Current, IC -- mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
1.0 10 100 1000
3
257 3
257 3
257
1000
100
2
3
5
7
hFE -- IC
IT05084
VCE(sat) -- IC
IT05085
Ta=75°C
--
25°C
25°C
VCE=2V
2
3
5
7
2
3
5
7
10
1.0
100
2
3
5
7
1000
1.0 23 5 10 100 1000
7 2357 2357
75°C
--25
°
C
Ta=
25
°
C
IC / IB=20
Collector Current, IC -- mA
DC Current Gain, hFE
Collector Current, IC -- mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
[PNP] [NPN]
IT05050
0
0
IC -- VBE
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2
--200
--800
--500
--700
--400
--300
--600
--100
Ta=75°C
25°C
--25
°
C
VCE= --2V
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- mA
0
300
400
200
800
700
600
500
100
0 0.2 0.4 0.6 0.8 1.0
IC -- VBE
IT05083
Ta=75
°
C
--25°C
25°C
VCE=2V
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- mA
MCH6541
No.8949-4/5
[PNP] [NPN]
IT05055
VCE(sat) -- IC
--1.0 23 57
--10 23 57 23 57
--100 --1000
--10
3
--1000
2
2
3
5
7
2
3
5
7
--100
Ta=75°C
--25
°
C
25°C
IC / IB=50
Collector Current, IC -- mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
VCE(sat) -- IC
IT05086
10
100
1000
7
5
3
2
7
5
3
2
1.0 23 510 100 1000
723 5723 57
IC / IB=50
75
°
C
--25°C
Ta=25
°
C
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector Current, IC -- mA
[PNP] [NPN]
[PNP] [NPN]
IT05053
--1.0
0.1
Cob -- VCB
--10
2357235
2
3
5
7
10 f=1MHz
IT05052
--1.0
fT -- IC
23 57 23 57 23 57
--10 --100 --1000
100
1000
5
7
2
3
VCE= --10V
Collector Current, IC -- mA
Gain-Bandwidth Product, fT -- MHz
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob -- pF
IT05089
fT -- IC
100
1000
7
3
5
2
101.0 100
23 5723 57 1000
23 57
VCE=10V
Cob -- VCB
IT05088
2
10
1.0
7
3
5
1.0 10
23 5 23 57
f=1MHz
Collector Current, IC -- mA
Output Capacitance, Cob -- pF
Collector-to-Base Voltage, VCB -- V
Gain-Bandwidth Product, fT -- MHz
[PNP] [NPN]
2
5
7
--1.0 23 57
--10 23 57 23 57
--100 --1000
IT05056
VBE(sat) -- IC
3
--1.0
2
5
7
3
--10
--0.1
Ta= --25
°
C
75
°
C
25
°
C
IC / IB=20
Collector Current, IC -- mA
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
VBE(sat) -- IC
IT05087
1.0
0.1
10
3
2
5
7
3
2
5
7
1.0 23 510 100 1000
723 5723 57
IC / IB=20
75
°
C
Ta=
--25°C
25°C
Collector Current, IC -- mA
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
MCH6541
No.8949-5/5
PS
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
[PNP] [NPN]
f=1MHz
--0.1
0.1
Base Current, IB -- mA
Ron -- IB
ON Resistance, Ron -- Ω
IT06403
7
5
3
2
10
7
5
3
2
7
5
3
2
1.0
100
32 57 32 57
--1.0 --10
OUT
IN 1kΩ
1kΩ
IB
Base Current, IB -- mA
Ron -- IB
ON Resistance, Ron -- Ω
f=1MHz
0.1
0.1
IT06793
10
7
5
3
2
7
5
3
2
1.0
32 57 32 57
1.0 10
OUT
IN 1kΩ
1kΩ
IB
0.6
0
0.1
0.2
0.3
0.4
0.5
0.55
0 20 40 60 80 100 120 140 160
IT10744
PD -- Ta
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- W
1unit
Total dissipation
[PNP/NPN]
When mounted on ceramic substrate
(600mm
2
✕0.8mm)
This catalog provides information as of February, 2008. Specifications and information herein are subject
to change without notice.
