TEMD5000 Vishay Semiconductors Silicon PIN Photodiode Description TEMD5000 is a high speed and high sensitive PIN photodiode in a miniature flat plastic package. Its top view construction makes it ideal as a low cost replacement of TO-5 devices in many applications. Due to its waterclear epoxy the device is sensitive to visible and infrared radiation. The large active area combined with a flat case gives a high sensitivity at a wide viewing angle. Features * * * * * * * * 12775 Applications 2 Large radiant sensitive area (A = 7.5 mm ) Wide angle of half sensitivity = 65 High photo sensitivity e4 Fast response times Small junction capacitance Suitable for visible and near infrared radiation Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC * High speed photo detector Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Test condition Symbol Value VR 60 V PV 215 mW Reverse voltage Power dissipation Tamb 25 C Tj 100 C Tstg - 55 to + 100 C Tsd 260 C RthJA 350 K/W Junction temperature Storage temperature range Soldering temperature t3s Thermal resistance junction/ ambient Unit Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Test condition Symbol Min V(BR) 60 Typ. Breakdown voltage IR = 100 A, E = 0 Reverse dark current VR = 10 V, E = 0 Iro 2 Diode capacitance VR = 0 V, f = 1 MHz, E = 0 CD 70 VR = 3 V, f = 1 MHz, E = 0 CD 25 Document Number 81552 Rev. 1.5, 28-Nov-06 Max Unit V 30 nA pF 40 pF www.vishay.com 1 TEMD5000 Vishay Semiconductors Optical Characteristics Tamb = 25 C, unless otherwise specified Parameter Test condition mW/cm2, = 950 nm Open circuit voltage Ee = 1 Temp. coefficient of Vo Ee = 1 mW/cm2, = 950 nm Short circuit current EA = 1 klx Typ. Max Unit 350 mV TKVo - 2.6 mV/K Ik 70 A = 950 nm 50 A = 950 nm TKIk 0.1 %/K Ira 75 A 55 A Ee = 1 Temp. coefficient of Ik Ee = 1 mW/cm2, Reverse light current EA = 1 klx, VR = 5 V Ee = 1 VR = 5 V Min Vo Ik mW/cm2, mW/cm2, Symbol = 950 nm, Ira 40 Angle of half sensitivity 65 deg Wavelength of peak sensitivity p 900 nm 0.5 600 to 1050 nm NEP 4 x 10-14 W/ Hz VR = 10 V, RL = 1 k, = 820 nm tr 100 ns VR = 10 V, RL = 1 k, = 820 nm tf 100 ns Range of spectral bandwidth Noise equivalent power VR = 10 V, = 950 nm Rise time Fall time Typical Characteristics Tamb = 25 C, unless otherwise specified Ira, rel - Relative Reverse Light Current Iro - Reverse Dark Current (nA) 1000 100 10 VR = 10 V 1 20 94 8403 40 60 80 100 Tamb - Ambient Temperature (C) Figure 1. Reverse Dark Current vs. Ambient Temperature www.vishay.com 2 1.4 VR = 5 V = 950 nm 1.2 1.0 0.8 0.6 0 94 8416 20 40 60 80 100 Tamb - Ambient Temperature (C) Figure 2. Relative Reverse Light Current vs. Ambient Temperature Document Number 81552 Rev. 1.5, 28-Nov-06 TEMD5000 Vishay Semiconductors 80 CD - Diode Capacitance (pF) Ira - Reverse Light Current (A) 1000 100 10 VR = 5 V = 950 nm 1 0.1 0.01 0.1 1 40 20 0 0.1 10 Ee - Irradiance (mW/cm 2) 12787 E=0 f = 1 MHz 60 Figure 3. Reverse Light Current vs. Irradiance 1 10 100 VR - Reverse Voltage (V) 948407 Figure 6. Diode Capacitance vs. Reverse Voltage S ( )rel - Relative Spectral Sensitivity Ira - Reverse Light Current (A) 1000 100 10 VR = 5 V 1 0.1 101 102 103 0.8 0.6 0.4 0.2 0 104 EA - Illuminance (lx) 94 8418 1.0 350 550 Figure 4. Reverse Light Current vs. Illuminance 750 Figure 7. Relative Spectral Sensitivity vs. Wavelength 0 100 10 20 30 1 mW/cm2 Srel - Relative Sensitivity Ira - Reverse Light Current (A) 1150 950 - Wavelength (nm) 94 8420 0.5 mW/cm2 0.2 mW/cm2 10 0.1 mW/cm2 0.05 mW/cm2 40 1.0 0.9 50 0.8 60 70 0.7 80 = 950 nm 1 0.1 12788 1 10 100 V R - Reverse Voltage (V) Figure 5. Reverse Light Current vs. Reverse Voltage Document Number 81552 Rev. 1.5, 28-Nov-06 0.6 0.4 0.2 0 0.2 0.4 0.6 94 8406 Figure 8. Relative Radiant Sensitivity vs. Angular Displacement www.vishay.com 3 TEMD5000 Vishay Semiconductors Package Dimensions in mm 12774 www.vishay.com 4 Document Number 81552 Rev. 1.5, 28-Nov-06 TEMD5000 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 81552 Rev. 1.5, 28-Nov-06 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1