TEMD5000
Document Number 81552
Rev. 1.5, 28-Nov-06
Vishay Semiconductors
www.vishay.com
1
12775
Silicon PIN Photodiode
Description
TEMD5000 is a high speed and high sensitive PIN
photodiode in a miniature flat plastic package. Its top
view construction makes it ideal as a low cost replace-
ment of TO-5 devices in many applications.
Due to its waterclear epoxy the device is sensitive to
visible and infrared radiation. The large active area
combined with a flat case gives a high sensitivity at a
wide viewing angle.
Features
• Large radiant sensitive area (A = 7.5 mm2)
• Wide angle of half sensitivity ϕ = ± 65°
• High photo sensitivity
• Fast response times
• Small junction capacitance
• Suitable for visible and near infrared radiation
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
• High speed photo detector
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
e4
Parameter Test condition Symbol Value Unit
Reverse voltage VR60 V
Power dissipation Tamb ≤ 25 °C PV215 mW
Junction temperature Tj100 °C
Storage temperature range Tstg - 55 to + 100 °C
Soldering temperature t ≤ 3 s Tsd 260 °C
Thermal resistance junction/
ambient
RthJA 350 K/W
Parameter Test condition Symbol Min Ty p. Max Unit
Breakdown voltage IR = 100 μA, E = 0 V(BR) 60 V
Reverse dark current VR = 10 V, E = 0 Iro 230nA
Diode capacitance VR = 0 V, f = 1 MHz, E = 0 CD70 pF
VR = 3 V, f = 1 MHz, E = 0 CD25 40 pF
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Document Number 81552
Rev. 1.5, 28-Nov-06
TEMD5000
Vishay Semiconductors
Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Min Typ. Max Unit
Open circuit voltage Ee = 1 mW/cm2, λ = 950 nm Vo350 mV
Temp. coefficient of VoEe = 1 mW/cm2, λ = 950 nm TKVo - 2.6 mV/K
Short circuit current EA = 1 klx Ik70 µA
Ee = 1 mW/cm2, λ = 950 nm Ik50 µA
Temp. coefficient of IkEe = 1 mW/cm2, λ = 950 nm TKIk 0.1 %/K
Reverse light current EA = 1 klx, VR = 5 V Ira 75 µA
Ee = 1 mW/cm2, λ = 950 nm,
VR = 5 V Ira 40 55 µA
Angle of half sensitivity ϕ± 65 deg
Wavelength of peak sensitivity λp900 nm
Range of spectral bandwidth λ0.5 600 to 1050 nm
Noise equivalent power VR = 10 V, λ = 950 nm NEP 4 x 10-14 W/√ Hz
Rise time VR = 10 V, RL = 1 kΩ, λ = 820 nm tr100 ns
Fall time VR = 10 V, RL = 1 kΩ, λ = 820 nm tf100 ns
Figure 1. Reverse Dark Current vs. Ambient Temperature
20 40 60 80
1
10
100
1000
100
94 8403
V
R
= 10 V
Tamb - Ambient Temperature (°C)
I
ro
- Reverse Dark Current (nA)
Figure 2. Relative Reverse Light Current vs. Ambient Temperature
0.6
0.8
1.0
1.2
1.4
Ira, rel - Relative Reverse Light Current
Tamb - Ambient Temperature (°C)
94 8416
V
R
= 5 V
λ
= 950 nm
010080
60
4020
TEMD5000
Document Number 81552
Rev. 1.5, 28-Nov-06
Vishay Semiconductors
www.vishay.com
3
Figure 3. Reverse Light Current vs. Irradiance
Figure 4. Reverse Light Current vs. Illuminance
Figure 5. Reverse Light Current vs. Reverse Voltage
0.01 0.1 1
0.1
1
10
100
1000
I - Reverse Light Current (μA)
ra
Ee- Irradiance (mW/cm )
2
10
12787
VR=5V
λ= 950 nm
0.1
1
10
100
1000
94 8418
101102103104
VR=5V
EA- Illuminance (lx)
I - Reverse Light Current (µA)
ra
0.1 1 10
1
10
100
VR- Reverse Voltage (V)
100
12788
I - Reverse Light Current (μA)
ra
1mW/cm
2
0.5 mW/cm
2
0.2 mW/cm
2
0.1 mW/cm
2
0.05 mW/cm
2
= 950 nm
λ
Figure 6. Diode Capacitance vs. Reverse Voltage
Figure 7. Relative Spectral Sensitivity vs. Wavelength
Figure 8. Relative Radiant Sensitivity vs. Angular Displacement
0
20
40
60
80
948407
E=0
f = 1 MHz
CD - Diode Capacitance (pF)
VR - Reverse Voltage (V)
0.1 100
110
350 550 750 950
0
0.2
0.4
0.6
0.8
1.0
1150
94 8420
λ
λ - Wavelength (nm)
S ( )rel - Relative Spectral Sensitivity
0.4 0.2 0 0.2 0.4
S - Relative Sensitivity
rel
0.6
94 8406
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
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Document Number 81552
Rev. 1.5, 28-Nov-06
TEMD5000
Vishay Semiconductors
Package Dimensions in mm
12774
TEMD5000
Document Number 81552
Rev. 1.5, 28-Nov-06
Vishay Semiconductors
www.vishay.com
5
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1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
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unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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