© Semiconductor Components Industries, LLC, 2013
June, 2013 − Rev. 11
1Publication Order Number:
MSD42WT1/D
MSD42WT1G,
NSVMSD42WT1G
NPN High Voltage
Transistors
This NPN Silicon Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC-70/SOT-323
package which is designed for low power surface mount applications.
Features
•These Devices are Pb−Free, Halogen Free and are RoHS Compliant
•NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Value Unit
Collector-Base Voltage V(BR)CBO 300 V
Collector-Emitter Voltage V(BR)CEO 300 V
Emitter-Base Voltage V(BR)EBO 6.0 V
Collector Current − Continuous IC150 mA
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Power Dissipation (Note 1) PD450 mW
Thermal Resistance, Junction−to−Ambient
(Note 1)
RqJA 274 °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Max Unit
Collector-Emitter Breakdown Voltage
(IC = 1.0 mA, IB = 0)
V(BR)CEO 300 −V
Collector-Base Breakdown Voltage
(IC = 100 mA, IE = 0)
V(BR)CBO 300 −V
Emitter-Base Breakdown Voltage
(IE = 100 mA, IE = 0)
V(BR)EBO 6.0 −V
Collector-Base Cutoff Current
(VCB = 200 V, IE = 0)
ICBO −0.1 mA
Emitter−Base Cutoff Current
(VEB = 6.0 V, IB = 0)
IEBO −0.1 mA
DC Current Gain (Note 2)
(VCE = 10 V, IC = 1.0 mA)
(VCE = 10 V, IC = 30 mA)
hFE1
hFE2
25
40
−
−
−
Collector-Emitter Saturation Voltage
(Note 2) (IC = 20 mA, IB = 2.0 mA)
VCE(sat) −0.5 V
1. FR-4 @ 10 mm2, 1 oz. Copper traces.
2. Pulse Test: Pulse Width ≤300 ms, D.C. ≤2%.
SC−70 (SOT−323)
CASE 419
STYLE 3
MARKING DIAGRAM
3
1
2
Device Package Shipping†
ORDERING INFORMATION
COLLECTOR
3
1
BASE
2
EMITTER
http://onsemi.com
MSD42WT1G 3000 / Tape & ReelSC−70
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1D MG
G
1
1D = Specific Device Code
M = Date Code
G= Pb−Free Package
(Note: Microdot may be in either location)
SC−70
NSVMSD42WT1G 3000 / Tape & ReelSC−70
(Pb−Free)
MSD42WT1G, NSVMSD42WT1G
http://onsemi.com
2
TYPICAL CHARACTERISTICS
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
10010.1
10
100
hFE, DC CURRENT GAIN
1000
10
Figure 2. Collector−Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (mA)
101
0.0
0.4
0.8
1.2
100
Figure 3. Base−Emitter Saturation Voltage vs.
Collector Current
IC, COLLECTOR CURRENT (mA)
10010.1
0
0.2
0.8
1.0
10
Figure 4. Base−Emitter On Voltage vs.
Collector Current
IC, COLLECTOR CURRENT (mA)
Figure 5. Base−Emitter Temperature
Coefficient
IC, COLLECTOR CURRENT (mA)
Figure 6. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
1000100.1
0.1
1
10
C, CAPACITANCE (pF)
100
100
TJ = 150°C
VCE = 10 V
25°C
−55°C
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
150°C
25°C
−55°C
0.1
0.6
1.0
0.2
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
150°C
25°C
−55°C
0.6
0.4
0.1
0.7
0.9
0.5
0.3
VBE(on), BASE−EMITTER VOLTAGE (V)
10010.1
0
0.2
0.8
1.0
10
150°C
25°C
−55°C
0.6
0.4
0.1
0.7
0.9
0.5
0.3
10010.1
−2.8
−2.0
10
qVB, TEMPERATURE COEFFICIENT (mV/°C)
VCE = 10 V
−55°C to 150°C
−0.4
−1.2
−2.4
0
−0.8
−1.6
qVB, for VBE
TJ = 25°C
f = 1 MHz
Cibo
Cobo
1
VCE = 10 V
MSD42WT1G, NSVMSD42WT1G
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 7. Current−Gain — Bandwidth Product
IC, COLLECTOR CURRENT (mA)
101
10
fTa u , CURRENT−GAIN BANDWIDTH (MHz)
100
100
VCE = 20 V
TJ = 25°C
Figure 8. Safe Operating Area
VCE, COLLECTOR−EMITTER VOLTAGE (V)
1000100.1
0.1
1
10
IC, COLLECTOR CURRENT (mA)
1000
100
Single Pulse Test at TA = 25°C
1 s 100 ms
1
100
10 ms 1 ms
Figure 9. Turn−On Time
IC, COLLECTOR CURRENT (mA)
1001
10
1000
10
Figure 10. Turn−Off Time
t, TIME (ns)
VCE(off) = 100 V
IC/IB = 5.0
IB1 = IB2
TJ = 25°C
100 td @ VBE(off) = 2 V
tr
IC, COLLECTOR CURRENT (mA)
1001
100
10000
10
t, TIME (ns)
VCE(off) = 100 V
IC/IB = 5.0
IB1 = IB2
TJ = 25°C
1000
ts
tf
MSD42WT1G, NSVMSD42WT1G
http://onsemi.com
4
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028
ǒmm
inchesǓ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
AA2
D
e1
b
e
E
A1
c
L
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.05 (0.002)
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.80 0.90 1.00 0.032
INCHES
A1 0.00 0.05 0.10 0.000
A2 0.70 REF
b0.30 0.35 0.40 0.012
c0.10 0.18 0.25 0.004
D1.80 2.10 2.20 0.071
E1.15 1.24 1.35 0.045
e1.20 1.30 1.40 0.047
0.035 0.040
0.002 0.004
0.014 0.016
0.007 0.010
0.083 0.087
0.049 0.053
0.051 0.055
NOM MAX
L
2.00 2.10 2.40 0.079 0.083 0.095HE
e1 0.65 BSC
0.38
0.028 REF
0.026 BSC
0.015
0.20 0.56 0.008 0.022
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Phone: 81−3−5817−1050
MSD42WT1/D
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