FDD9507L-F085 PChannel POWERTRENCH) MOSFET -40 V, -100 A, 4.4 mW Features * * * * * Typical RDS(on) = 3.3 mW at VGS = -10 V, ID = -80 A Typical Gg(tot) = 110 nC at VGS = -10 V, ID = -80 A UIS Capability Qualified to AEC Q101 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com VDSS RDS(ON) MAX ID MAX -40 V 4.4 mW @ -10 V -100 A D Applications * * * * * * * Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Electrical Power Steering Integrated Starter/Alternator Distributed Power Architectures and VRM Primary Switch for 12 V Systems G S P-CHANNEL MOSFET MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Parameter D Value Unit G VDSS Drain-to-Source Voltage -40 V VGS Gate-to-Source Voltage 16 V Drain Current - Continuous, (VGS = -10 V) TC = 25C (Note 1) -100 A DPAK3 (TO-252) CASE 369AS Pulsed Drain Current, TC = 25C (See Figure 4) A MARKING DIAGRAM EAS Single Pulse Avalanche Energy (Note 2) 259 mJ PD Power Dissipation 227 W Derate Above 25C 1.52 W/C -55 to +175 C ID TJ, TSTG Operating and Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Current is limited by bondwire configuration. 2. Starting TJ = 25C, L = 0.1 mH, IAS = -72 A, VDD = -40 V during inductor charging and VDD = 0 V during time in avalanche. S $Y&Z&3&K FDD 9507L $Y &Z &3 &K FDD9507L = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. (c) Semiconductor Components Industries, LLC, 2017 August, 2018 - Rev. 4 1 Publication Order Number: FDD9507L-F085/D FDD9507L-F085 THERMAL CHARACTERISTICS Symbol Parameter RqJC Thermal Resistance, Junction to Case RqJA Thermal Resistance, Junction to Ambient (Note 3) Value Unit 0.66 C/W 52 3. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design, while RqJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS BVDSS IDSS IGSS Drain-to-Source Breakdown Voltage ID = -250 mA, VGS = 0 V -40 - - V Drain-to-Source Leakage Current VDS = -40 V, VGS = 0 V TJ = 25C TJ = 175C (Note 4) - - - - 1 1 mA mA VGS = 16 V - - 100 nA Gate-to-Source Leakage Current ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 mA -1 -2 -3 V RDS(on) Static Drain to Source On Resistance VGS = -4.5 V, ID = -80 A, TJ = 25C - 4.9 7.2 mW VGS = -10 V, ID = -80 A TJ = 25C TJ = 175C (Note 4) - - 3.3 5.3 4.4 7.1 VDS = -20 V, VGS = 0 V, f = 1 MHz - 6250 - pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance - 2640 - pF Crss Reverse Transfer Capacitance - 61 - pF Gate Resistance f = 1 MHz - 19.3 - W Qg(tot) Total Gate Charge VGS = 0 V to -10 V, VDD = -20 V, ID = -80 A - 100 130 nC Qg(-4.5) Total Gate Charge VGS = 0 V to -4.5 V, VDD = -20 V, ID = -80 A - 46 - nC Qg(th) Threshold Gate Charge VGS = 0 V to -2 V, VDD = -20 V, ID = -80 A - 13 - nC Qgs Gate to Source Charge VDD = -20 V, ID = -80 A - 22 - nC Qgd Gate to Drain "Miller" Charge VDD = -20 V, ID = -80 A - 13 - nC VDD = -20 V, ID = -80 A, VGS = -10 V, RGEN = 6 W - - 21 ns - 10 - ns Rise Time - 6 - ns Turn-Off Delay - 400 - ns Fall Time - 132 - ns Turn-Off Time - - 710 ns V Rg SWITCHING CHARACTERISTICS ton Turn-On Time td(on) Turn-On Delay tr td(off) tf toff DRAIN-SOURCE DIODE CHARACTERISTICS VSD Source to Drain Diode Forward Voltage ISD = -80 A, VGS = 0 V - -0.9 -1.3 ISD = -40 A, VGS = 0 V - -0.85 -1.2 trr Reverse Recovery Time IF = -80 A, dISD/dt = 100 A/ms - 87 113 ns Qrr Reverse Recovery Charge - 115 150 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at TJ = 175C. Product is not tested to this condition in production. www.onsemi.com 2 FDD9507L-F085 200 1.2 1.0 -ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER TYPICAL CHARACTERISTICS 0.8 0.6 0.4 0.2 CURRENT LIMITED BY SILICON VGS = -10 V 160 120 80 CURRENT LIMITED BY PACKAGE 40 0 0.0 0 25 50 75 100 125 150 175 25 TC, CASE TEMPERATURE (5C) 50 75 100 125 150 Figure 1. Normalized Power Dissipation vs. Case Temperature Figure 2. Maximum Continuous Drain Current vs. Case Temperature 2 NORMALIZED THERMAL IMPEDANCE, ZqJC DUTY CYCLE - DESCENDING ORDER 1 D = 0.50 0.20 0.10 0.05 0.02 t1 0.01 PDM 0.1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x Z qJC x RqJC + TC 0.01 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 10 0 10 1 Figure 3. Normalized Maximum Transient Thermal Impedance 5000 T C = 25 o C IDM, PEAK CURRENT (A) VGS = -10 V FOR TEMPERATURES ABOVE 25 o C DERATE PEAK CURRENT AS FOLLOWS: 1000 I = I 25 175 - T C 150 100 SINGLE PULSE 10 -5 10 -4 10 175 TC, CASE TEMPERATURE(oC) -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability www.onsemi.com 3 10 0 10 1 FDD9507L-F085 TYPICAL CHARACTERISTICS 300 -IAS, AVALANCHE CURRENT (A) -I D , DRAIN CURRENT (A) 1000 100 100 us 10 1 ms 10 ms 1 OPERATION IN THIS AREA MAY BE LIMITED BY r DS(on) 0.1 11 SINGLE PULSE TJ = MAX RATED TC = 25oC 100 ms 0 -VDS, DRAIN TO SOURCE VOLTAGE (V) TJ = 25oC 150 1 10 100 1000 TJ = -55oC TJ = 175 oC 10 TJ = 25 oC 3 4 TJ = -55oC 1 0.1 0.0 5 0.2 0.4 0.6 0.8 1.0 -VGS, GATE TO SOURCE VOLTAGE (V) -V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics 1.2 300 -I D, DRAIN CURRENT (A) 300 -I D, DRAIN CURRENT (A) 0.1 100 0 2 0.01 VGS = 0 V -I S, REVERSE DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 200 1 STARTING TJ = 150oC 300 VDD = -5 V 50 10 Figure 6. Unclamped Inductive Switching Capability PULSE DURATION = 250 m s DUTY CYCLE = 0.5% MAX TJ = 175oC STARTING TJ = 25oC tAV, TIME IN AVALANCHE (ms) 300 100 100 1 0.001 100 Figure 5. Forward Bias Safe Operating Area 250 If R = 0 t AV = (L)(I AS )/(1.3*RATED BV DSS - VDD ) If R 0 0 tAV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - VDD ) +1] 250 200 150 100 50 250 m s PULSE WIDTH Tj=25oC 0 0 1 2 3 VGS -10V Top -7V -5V -4.5V -4V -3.5V Bottom 4 250 200 150 VGS 100 50 250 m s PULSE WIDTH Tj=175oC 0 5 0 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 9. Saturation Characteristics -10V Top -7V -5V -4.5V -4V -3.5V Bottom 1 2 3 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Saturation Characteristics www.onsemi.com 4 5 FDD9507L-F085 RDS(on), DRAIN TO SOURCE ON-RESISTANCE (mW) 50 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE TYPICAL CHARACTERISTICS PULSE DURATION = 250 m s DUTY CYCLE = 0.5% MAX 40 ID = -80 A 30 20 o TJ = 175 C 10 TJ = 25 oC 0 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 VGS = VDS NORMALIZED GATE THRESHOLD VOLTAGE ID = -250 m A 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 -80 -40 0 40 80 120 160 1.4 1.2 1.0 ID = -80 A VGS = -10 V 0.8 0.6 -80 160 200 1.05 1.00 0.95 0.90 -80 -VGS, GATE TO SOURCE VOLTAGE (V) CAPACITANCE (pF) 120 -40 0 40 80 100 120 160 Figure 14. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature Coss 1000 100 Crss f = 1 MHz VGS = 0 V 10 80 TJ, JUNCTION TEMPERATURE (oC) Ciss 1 40 ID = -5 mA 200 Figure 13. Normalized Gate Threshold Voltage vs. Temperature 10 0.1 0 1.10 TJ, JUNCTION TEMPERATURE ( oC) 10000 -40 Figure 12. Normalized RDS(on) vs. Junction Temperature NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.3 PULSE DURATION = 250 m s DUTY CYCLE = 0.5% MAX 1.6 TJ, JUNCTION TEMPERATURE ( oC) Figure 11. RDS(on) vs. Gate Voltage 1.2 1.8 40 -V DS, DRAIN TO SOURCE VOLTAGE (V) 10 ID = -8 A 8 VDD = -20 V VDD = -24 V 6 VDD = -16 V 4 2 0 0 20 40 60 80 Qg, GATE CHARGE (nC) Figure 15. Capacitance vs. Drain to Source Voltage Figure 16. Gate Charge vs. Gate to Source Voltage www.onsemi.com 5 100 FDD9507L-F085 PACKAGE DIMENSIONS DPAK3 (TO-252 3 LD) CASE 369AS ISSUE O www.onsemi.com 6 FDD9507L-F085 ORDERING INFORMATION Device Marking Package Reel Size Tape Width Quantity FDD9507L-F085 FDD9507L DPAK3 (TO-252) (Pb-Free / Halogen Free) 13 16 mm 2500 Units POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. 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