DATA SH EET
Product specification
Supersedes data of 2001 Mar 02 2001 Apr 17
DISCRETE SEMICONDUCTORS
BAP50-05W
General purpose PIN diode
ok, halfpage
M3D102
2001 Apr 17 2
NXP Semiconductors Product specification
General purpose PIN diode BAP50-05W
FEATURES
Two elements in common cathode co nfiguration in a
small-sized pl astic SMD package
Low diode capacitance
Low diode fo rward resistanc e.
APPLICATIONS
General RF applications.
DESCRIPTION
Two planar PIN diodes in common cathode configuration
in a SOT323 small SMD plastic package.
PINNING
PIN DESCRIPTION
1 anode
2 anode
3 common cathode
handbook, halfpage
3
21
Top view
MAM382
21
3
Marking code: W4-.
Fig.1 Simplified outline (SOT3 23 ) an d symb ol .
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VRcontinuous reverse voltage 50 V
IFcontinuous forward curren t 50 mA
Ptot total power dissipation Ts=90C240 mW
Tstg storage temperature 65 +150 C
Tjjunction temperature 65 +150 C
2001 Apr 17 3
NXP Semiconductors Product specification
General purpose PIN diode BAP50-05W
ELECTRICAL CHARACTERISTIC S
Tj= 25C unless otherwise specified.
Note
1. Guaranteed on AQL bas is: inspection level S4, AQL 1.0.
THERMAL CHARACTE RISTI CS
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per diode
VFforward voltage IF=50mA 0.95 1.1 V
VRreverse voltage IR=10A50V
IRreverse current VR=50V 100 nA
Cddiode capacit ance VR=0; f=1MHz 0.45 pF
VR=1V; f=1MHz 0.35 0.6 pF
VR=5V; f=1MHz 0.3 0.5 pF
rDdiode forw ard resistance IF= 0.5 mA; f = 100 MHz; note 1 25 40
IF= 1 mA; f = 100 MHz; note 1 14 25
IF= 10 mA; f = 100 MHz; note 1 35
s212isolation VR=0; f=900MHz 19 dB
VR= 0; f = 1800 MHz 15.7 dB
VR= 0; f = 2450 MHz 13.5 dB
s212insertion loss IF= 0.5 mA; f = 900 MHz 1.84 dB
IF= 0.5 mA; f = 1800 MHz 1.90 dB
IF= 0.5 mA; f = 2450 MHz 1.92 dB
s212insertion loss IF=1mA; f=900MHz 1.08 dB
IF= 1 mA; f = 1800 MHz 1.13 dB
IF= 1 mA; f = 2450 MHz 1.17 dB
s212insertion loss IF=10mA; f=900MHz 0.26 dB
IF= 10 m A; f = 1800 MHz 0.30 dB
IF= 10 m A; f = 2450 MHz 0.36 dB
Lcharge carrier life time when switched from IF=10mA to
IR=6mA; R
L=100;
measured at IR=3mA
1.05 s
LSseries inductance IF= 100 mA; f = 100 MHz 1.6 nH
SYMBOL PARAMETER VALUE UNIT
Rth j-s thermal resistance from junction to soldering point 250 K/W
2001 Apr 17 4
NXP Semiconductors Product specification
General purpose PIN diode BAP50-05W
GRAPHICAL DATA
handbook, halfpage
103
102
10
1
10−1
MLD605
10−11IF (mA)
rD
(Ω)
10 102
Fig.2 Forward resistance as a function of
forward current; typical values.
f=100MHz; T
j=25C.
handbook, halfpage
0VR (V)
Cd
(fF)
20
600
0
200
400
4 8 12 16
MLD606
Fig.3 Diode capacitance as a function of reverse
voltage; typical values.
f=1MHz; T
j=25C.
handbook, halfpage
0.5 3
0
−5
s21 2
(dB)
−4
−3
−2
−1
1f (GHz)
1.5 2 2.5
MLD607
(1)
(3)
(2)
Fig.4 Insertion loss s212 of the diode in on-state
as a function of frequency; typical values.
(1) IF=10mA. (2) IF=1mA. (3) IF=0.5mA.
Diode inserted in series with a 50 stripline circuit and
biased via the analyzer Tee network.
Tamb =25C.
handbook, halfpage
0.5 3
0
−25
s21 2
(dB)
−20
−15
−10
−5
1f (GHz)
1.5 2 2.5
MLD608
Fig.5 Isolation (s212) of the diode in off-state as a
function of frequency; typical values.
Diode zero biased and inserted in serie s with a 50 stripline circuit.
Tamb =25C.
2001 Apr 17 5
NXP Semiconductors Product specification
General purpose PIN diode BAP50-05W
PACKAGE OUTLINE
UNIT A1
max bpcD Ee1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.1
1.1
0.8 0.4
0.3 0.25
0.10 2.2
1.8 1.35
1.15 0.65
e
1.3 2.2
2.0 0.23
0.13 0.20.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323 SC-70
wM
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
vMA
AB
y
0 1 2 mm
scale
A
X
12
3
Plastic surface-mounted package; 3 leads SOT323
04-11-04
06-03-16
2001 Apr 17 6
NXP Semiconductors Product specification
General purpose PIN diode BAP50-05W
DATA SHEET STATUS
Notes
1. Please consult the most recently issued documen t b efore initiating or completing a design.
2. The product status of device (s) described in this document may have changed since this document was publishe d
and may differ in case of multiple devices. The latest product status information is available on th e Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This doc ument contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
DEFINITIONS
Product specification The information and da ta
provided in a Product data she et shall define the
specification of the product as agre ed between NXP
Semiconductors and its custo m er, unless NXP
Semiconductors and cus to mer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which th e NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
DISCLAIMERS
Limited warranty and liability Information in this
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However, NXP Semiconduc tors does not give any
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shall have no liability for the consequences of use of such
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Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of
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party customer(s). Customers should provide appropriate
design and opera ting safeguards to minimi ze the ris ks
associated with their ap plications and produ cts.
2001 Apr 17 7
NXP Semiconductors Product specification
General purpose PIN diode BAP50-05W
NXP Semiconductors does not accept any liability related
to any default, damage, cost s or problem which is based
on any weakness or default in the customer’s applications
or products, or the applic ation or use by customer’s th ird
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semic on ductors produc ts in or de r to
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the application or use by cust omer’s third party
customer(s). NXP does not accept any liability in this
respect.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operat ion of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
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Semiconductors products are sold subject to the general
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Quick refer ence data The Quick reference data is an
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© NXP B.V. 2010
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this do cum en t d oes not form part o f an y q uotation or contra ct, is b elieve d t o b e a ccur ate a nd re liable and may be changed
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No cha ng es were made to the technic al co ntent, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R77/02/pp8 Date of release: 2001 Apr 17
