WESTCODE SEMICONDUCTORS SEMICONDUCTORS J5E >) Mm 9709955 0002359 T MEWESBT-25-Q | Gy) WESTCODE @ Technical Publication TR180C Issue 1 December 1985 High Frequency Inverter Grade Capsule Thyristor Type R180C distributed amplified gate for high di/dt and low switching losses 590 amperes average: up to 1000 volts VarwVpam Ratings (Maximum values at 125C Tj unless stated otherwise) RATING CONDITIONS SYMBOL 55C heatsink temperature (double side cooled) 590 A Average on-state current Half sine wave bray) 85C heatsink temperature : . 190 A (single side cooled) R.M.S. on-state current 25C heatsink temperature, double side cooled hriRMs) 1244 A Continuous on-state current 25C heatsink temperature, double side cooled k 900 A Peak one-cycle surge 10ms duration, 60% Vaay re-applied brs (1) 8000 A (non-repetitive) on state current 10ms duration, Vax 10 volts hsm (2) 8800 A . tas 10ms duration, Vas 10 volts lt (2) 387000 A?2s Maximum permissible surge energy 3ms duration, V,< 10 volts it 283000 A2. Peak forward gate current Anode positive with respect to cathode lecm 36 A Peak forward gate voltage Anode positive with respect to cathode VeGmM 16V Peak reverse gate voltage Vacm 5V Average gate power Pg 2W Peak gate power 100s. pulse width Pom 120 W Rate of rise of off-state voltage To 80% Vprm gate open-circuit dv/dt *200 V/us Rate of rise of on-state current di/dt (1) 1000 A/us (repetitive) Gate drive 20 volts, 20 ohms witht, < 1us. Rate of rise of on-state current Anode voltage < 80% Vpram di/dt (2) 1500 A/ps (non-repetitive) Operating temperature range Ths 40+ 125C Storage temperature range Tstg 40+ 150C Characteristics (Maximum values at 125C Tj unless stated otherwise) CHARACTERISTIC CONDITIONS SYMBOL Peak on-state voltage At 1400 A, hy Vim 2.52 V Forward conduction threshold voltage Vo 2.1V Forward conduction slope resistance r 0.3 mQ Repetitive peak off-state current At Vorm lorm 70 mA Repetitive peak reverse current At Vearm lapm 70 mA Maximum gate current required to fire all devices let 300 mA Maximum gate voltage required to fire all devices i At 25C, V,=10V, I~=2A { Vet 3V Maximum holding current ly 1A Maximum gate voltage which will not trigger any device Veo 0.25 V Stored charge ley = 1000A, dir/dt 60A/ps O,, 60 nC Vam = DOV, 50% chord value . Circuit commutated turn-off time Le = 1000A 200V/ps to 80% Vorm| td 12-20 ys available down to dir/dt =60A/us, Vay =50V) 20V/pys to 80% Voay| ta typical 10-15 ps Thermal resistance, junction to heat sink, Double side cooled Reni 0.047C/W for a device with a maximum forward volt Single side cooled hfj-hs) 0.094C/W drop characteristic VOLTAGE CODE HO2 HO04 HO6 HO8 H10 Repetitive peak voltages Varm VoRM Non-repetitive peak off-state voltage Vosm 200 400 600 800 1000 Non-repetitive peak reverse blocking voltage | Vasu | 300 500 700 900 1100 Ordering Information (Please quote device code as explained below 11 digits) R 18 0 C e @ e e e 0 dv/dt code to 80% Vor Turn-off time Fixed Voltage Code C=20V/us E=100V/ys K=20 us L=15 ws type code (see ratings) D=50V/us F=200V/us M=12 us N= 10 zs Typical code: R180CHO6FLO = 600 Vaan 600 Vinm 200 V/s dv/dt to 80% Vpgy 15 us turn-off *Other values of dv/dt up to 1000 V/us, and turn-off time may be available. 9000-3983 f(a) (b) {c) (d) {e) (a) WESTCODE SEMICONDUCTORS 39E D ml INTRODUCTION The R180C series of thyristors incorporates diffused silicon slices, 38 mm in diameter in cold- weld housings. Fast turn-on, with low turn-on loss is achieved by interdigitation of the cathode. NOTES ON THE RATINGS Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 7500 A/ys at any time during turn-on on a non-repetitive basis. For repetitive performance the on-state rate of rise of current must not exceed 1000 A/ys at any time during turn-on. Note that these values of current rate of rise apply to the circuit external to the device and its specified snubber network and device current rates of rise will be higher. (b) Square wave ratings These ratings are given for leading edge linear rates of rise of forward current of 100 and 500 A/us. Duty Cycle Lines The 100% duty cycle line appears on all these ratings. These frequency ratings are presented in the form that all duty cycles may be represented by straight parallei lines. 4. Maximum operating Frequency The maximum operating frequency, fmax, is set by the time required for the thyristor to turn off (tq) and for the off-state voltage to reach full value (tv), i.e. 1 toulse + tq + tv 5. Energy per pulse characteristics These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by the frequency ratings. Let E, be the Energy per pulse for a given current and pulse width, in joules. Then Way =E, xf. REVERSE RECOVERY LOSS On account of the number of circuit variables affecting reverse recovery voltage, no allowance for reverse recovery loss has been made in these ratings. The following procedure is recommended for use where it is necessary to include reverse recovery loss. max Determination by Measurement From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed. Let the area under this waveform be A joules per pulse. A new heat sink temperature can then be evaluated from: eos 6 Tsink (new) = Tsinx (original) A (2 + Rip Xx ) where r,=8.53 x 10-5/t t=duration of reverse recovery loss per pulse in microseconds A= Area under reverse loss waveform per pulse in joules (W.S.) (a) (b) f=rated frequency at the original heat sink temperature 9709955 0002360 b MBWESB7-Je-sy The total dissipation is now given by Witot) = Wyorigina) + A x f Design Method In circumstances where it is not possible to measure voltage and current conditions, or for design purposes, the additional losses may be estimated from figure 7. A typical R-C snubber network is connected across the thyristor to control the transient reverse voltage waveform. Let E be the value of energy per reverse cycle in joules (figure 7). Let f be the operating frequency in Hz then Tsink new = Tsink original _ ERin x f where Tsiyx new is the required maximum heat sink temperature and Tsinx Original is the heat sink ternperature given with the frequency ratings. GATE DRIVE The recommended gate drive is 20 V, 20 ohms with a short-circuit current rise time of not more than 1 us. This gate drive must be applied when using the fuil di/dt capability of the device. THE DV/DT SUPPRESSION NETWORK The effect of a conventional resistor-capacitor snubber of 0.1 #F 10 ohms has been included in these ratings and all rating di/dt values apply to the circuit external to the thyristor and its suppression network. Snubber Network Values A series connected C-R filter may be required across the anode to cathode terminals of the thyristor for the purpose of reducing off-state voltage overshoot. The optimum values for C and R depend partly on the circuits connected to the thyristor. For most applications the snubber design values should not exceed a maximum of 0.1 wF ora minimum of 10 ohms. Please consult Westcode for values outside these limits. NOTE 1 REVERSE RECOVERY LOSS BY MEASUREMENT This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring the charge care must be taken to ensure that: a.c. coupled devices such as current transformers are not affected by prior passage of high amplitude forward current. The measuring oscilloscope has adequate dynamic range typically 100 screen heights to cope with the initial forward current without overload.WESTCODE SEMICONDUCTORS 100 Ths = 85C 500 A/yus are wave 10 0.1 frequency, KHz 0.01 0.01 0.1 1 10 pulse width, m.secs Figure 1 Frequency v. pulse width 100 Ths = 55C 500 A/ps uare wave 10 0.1 frequency, KHz 0.01 0.01 0.1 1 10 pulse width, m.secs Figure 3. Frequency v. pulse width 39E D MM 9709955 0002361 MBUESBT~ASey 100 Ths = 85C 100 A/us uare wave 10 0.1 frequency, KHz 0.01 0.01 0.1 1 10 pulse width, m.secs Figure 2. Frequency v. pulse width 100 Ths = 55C 100 A/ys square wave 10 0.1 frequency, KHz 0.01 0.01 0.1 1 10 pulse width, m.secs Figure 4 Frequency v. pulse widthWESTCODE SEMICONDUCTORS 39E D MM 9709955 0002362 T MMEUESB7-25-9) 100 100 10 10 1 1 B 0.1 g 0.1 2 3 Q Tj = 125C = Tj = 125C 8 500 A/us 3 100 A/us a square wave a uare wave > > @ > 3 e 0.01 & 0.01 0.01 0.1 1 10 0.01 0.1 1 10 pulse width, m.secs pulse width, m.secs Figure 5 Energy/pulse v. pulse Figure 6 Energy/pulse v. pulse width width 0.1 0.05 0.01 8 = Q 8 3 2. o Qa 5 snubber connected 0.1 nF 10 0 5 ; peak reverse voltage Vam=0.67 Vanm max. (670 volts) o 0.00 10 20 50 100 200 commutating di/dt, A/us Figure 7 Max. reverse recovery energy loss per pulse at 125C junction temperature and Van = 670 volts. 7 -WESTCODE SEMICONDUCTORS 39E D MM 9709955 0000363 1 MBWESB F2Q-) 100 Q hs = sine wave 10 0.1 frequency, KHz 0.01 0.01 0.1 1 10 pulse width, m.secs Figure 8 Frequency v. pulse width 100 10 0.1 frequency, KHz 0.01 0.01 0.1 1 10 pulse width, m.secs Figure 10 Frequency v. pulse width recovered charge, Q,,, microcoulorabs 100 10 wo 0.1 3s 3 8 j= 125 a sine wave > p 2 5 0.01 0.01 0.1 1 10 pulse width, m.secs Figure 9 Energy/pulse v. pulse width 200 100 8 30 20 20 30 40 50 100 200 commutating di/dt, A/ys Figure 11 Maximum recovered charge at 125C junction temperatureWESTCODE SEMICONDUCTORS 39E D M@@ 9709955 0002364 3 MWESBI-QS>2/ 2 7 9 0.1 Z 100 10 8 0.05 E : 3 3 3 8 g 2 3 & 2 8 4 a 0.01 a 2 a 3 10 108 B 0.008 55 a ~ ~~ ~ Ee S g ooh aeua 2 a a RRM S 3 * = 0.001 2 1 1 0.001 0.01 0.1 1 10 1 1010.5 5 50 100 time, seconds m.secs cycles at 50 Hz . : . duration of surge . Figure 12 Junction to heatsink Figure 13. Max. non-repetitive surge current transient thermal at initial junction temperature 125C im pedance (gate may temporarily lose control of firing angle) Note: This rating must not be interpreted as an intermittent rating 18 = 16 = Vg pk. max. (fg tr=T ys 4 14 g d.c. max. 12 g 3 10 $ 2 max. (pulse) g 2 o 8 > > > = : & 3 > 6 1 8 oe 9 3 a 4 te 2 2 3 lie within these curves s > 2 lor details o Pg max. d.c. =2 ao 2 tated . 0 200 ~~ 400 600 ow gate current, Ig, milliamperes 01 0305 1 3.5 10 30 50 Figure 15 Gate triggering gate current, lg, amperes characteristics. Figure 14 Gate characteristics at Trigger points of all thyristors lie within the areas shown Gate drive load line must lie on: . 25C junction temperature outside appropriate Ig/Vg rectangle 10000 5000 dimensions in mm (inches) Mounting force: 1000-2000 kgf 1000 Weight: 340 grams COMPRESSED HEIGHT 015106 FOR AMP REC , No 60598-1 peak on-state current, amperes 100 2.0 2.2 24 26 28 3.0 3.2 36x19 Taal on-state voltage, volts 2 oves Figure 16 Limit on-state characteristic TO 200AC In the interest of product improvement, Westcode reserves the right to change specifications at any time without notice. WESTCODE SEMICONDUCTORS LTD P.O. Box 57 Chippenham Wiltshire SN15 1JL England Telephone Chippenham (0249) 654141 Telex 44751 Oe HAWKER SIDDELEY Westinghouse Brake and Signal Co. Ltd. Printed by the Pheon Press, Bristol 241285