AlGaAs INFRARED EMITTING DIODE OPTOELECTRONICS F5D1/2/3 The FSD series is 880nm LEDs in a narrow angle, T0-46 SEATING package. PLANE a op 71 811332 = Good optical to mechanical alignment sympo. L_INGHES [MILLIMETERS |, oreg . Mechanically and wavelength matched to TO-18 series MIN. | Max. | MIN, ] MAX. phototransistor A | 255 [ | 647 : @b tie | 021 | 407 | saa m Hermetically sealed package D 209 | 230 | 5.31 | 5.84 @ High irradiance level @D, | 180 | .188 [ 457 [ 4.77 e 100 NOM. [2.54 NOM. 2 e .050NOM. | 1.27 NOM. 2 h [030 [ 76 j 031 | 044 [79 | 4.11 k o36 | 046 | 92 [ 1.46 [1 L 1.00 [| [254 - a 4s_|_45 | ase [ 45 [| 3 3 ( , { ANODE CATHODE (CONNECTED TO CASE) $T1604 NOTES: 1. MEASURED FROM MAXIMUM DIAMETER OF DEVICE. 2. LEADS HAVING MAXIMUM DIAMETER .021 (.533mm) MEASURED IN GAUGING PLANE .054 + .001 .000 (137 + 025 000mm) BELOW THE REFERENCE PLANE OF THE DEVICE SHALL BE WITHIN .007 (778mm) THEIR TRUE POSITION RELATIVE TO A MAXIMUM WIDTH TAB. 3. FROM CENTERLINE TAB.OPTOELECTRONICS AlGaAs INFRARED EMITTING DIODE Storage Temperature 65C to +150C Operating Temperature 6.2... ce nnn nnn re 65C to +125C Soldering: Lead Temperature (Iron) 2.0.0.2 cece eee enn ene tees 240C for 5 sec.&455 Lead Temperature (FIOW) 2.0.0.2 6 0c etn 260C for 10 sec.*4* Continuous Forward Current ......000.0 000000 e eens 100 mA Forward Current (pw, 10428; 100 Hz) 2.0... 6. ee tte e nes 3A Forward Current (pw, 12S; 200 HZ) 0... eee tte renee 10A Reverse Voltage .. 2.0.0. c een nen ene ener et enter tenet n ees 3 Volts Power Dissipation (T, = 25C)... 06. ccc ee eee ttre ees 170 mW Power Dissipation (Tc = 25C) 20.0.0. c ee ee nee e etter tern n ees 1.3 W PARAMETER SYMBOL 5 . . UNITS TEST CONDITIONS Forward Voltage . Vv |p = 100 mA Reverse Leakage Current pA Va=3V Peak Emission Wavelength . nm |; = 100 mA Emission Angle at 12 Power Degrees Total Power F5D1 mW |. = 100 mA Total Power F5D2 . mw |; = 100 mA Total Power F5D3 mw |p = 100 mA Rise Time 0-90% of output . us Fall Time 100-10% of output . us . _Derate power dissipation linearly 1.70 mW/C above 25C ambient. . Derate power dissipation linearly 13.0 mW/C above 25C case. . AMA flux is recommended. |. Methanol or lsopranol alcohols are recommended as cleaning agents. . Soldering iron tip 4e (1.6 mm) minimum from housing. . As long as leads are not under any stress or spring tension. . Tatal power output, Po, is the total power radiated by the device into a solid angle of 27 steradians.OPTOELECTRONICS AlGaAs INFRARED EMITTING DIODE 10 20 P| ip sia 10 b 5 8 2 z 6 5 ME 34 = 4 So oe Ei : 2 5 rH 8 Eo _ a p+ _Lrriooma a ~ N IR N rl t_ J O08 =| z | NORMALIZED TO 3 os [a = t Ip =100mA = S | Ty = 26C 04 Zz Odi i ---+ 4 1 NORMALIZED TO ra + PULSED INPUTS a IpstOOmA, Tas 25C e LZ + Pw = 8Qusec O2bL- PwsS8dpsec, f= 30Hz | RR=30H2 | | | aoottt. | | Olas 0 25 60 75 100 S 150 vm 0 100 000 Ip-INPUT CURRENT=maA Ta-AMBIENT TEMPERATURE-C . $T1025 . S$T1026 Fig. 1. Power Output vs. Input Current Fig. 2. Power Output vs. Temperature 4 T t Pw=80usec oo | Fe3OHr P| en | \ eo | 20 e F a st] g $ & g 5 60 Q __| A, a : g " fama 3 a w < | z 4 | ~-o 100mA & . 4] Z | | ee A 4 & poe | t wp 20 Ht) | AL 13s 25 50 75 100 125 150 Og + 5 $086 To Ta-AMBIENT TEMPERATURE-C @-DISPLACEMENT FROM OPTICAL AXIS-DEGREES . $T1027 . . 7 $T1028-99 Fig. 3. Forward Voitage vs. Temperature Fig. 4. Typical Radiation Pattern 100 posto 120 Cra fp Ip L 100 =a t BV 5 = =e LI4G 4 z jn 4 ~~ ft io, 2 fee / Ne +S E - FE0I W got _| TYPICAL SPECTRAL x e a 80 SPONSE Of SILICON z 4 PHOTOSENSORS ~ a 2 FSD E io Cc 5 60 if an 3 | 3 7 1 Bb Ww > > ] a Ee 5 < 40 ] TYPICAL OUTPUTS wy : ? ok AT A DISTANCE OF | [|_| IF=l00ma = 1OCM PULSED | Ta #25C INPUTS, PW.= BOus | a 20 as / -=b 4A RR = 3OWz Oo! | I | MN 10 100 i000 700 B00 900 i000 Ip-INPUT CURRENT-mA A-WAVE LENGTH-nm 5 . $T1029-99 . $T1030-99 Fig. 5. Output vs. Input with L14G Detector Fig. 6. Output vs. Wavelength