SIEMENS BCR 119 NPN Silicon Digital Transistor * Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor (Ry=4.7kQ) VPSO5161 Tu Type Marking |Ordering Code | Pin Configuration Package BCR 119 WKs Q62702-C2255 |1=B. 2 =E 3=C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VoEO 50 Vv Collector-base voltage Voso 50 Emitter-base voltage VeBo 5 Input on Voltage Vion) 15 DC collector current Ic 100 mA Total power dissipation, Ts = 102C Prot 200 mw Junction temperature Tj 150 C Storage temperature Tstg - 65... + 150 Thermal Resistance Junction ambient 1) Finga < 350 K/W Junction - soldering point Anus < 240 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6em? Cu Semiconductor Group 603 12.96SIEMENS BCR 119 Electrical Characteristics at Ta=25C, unless otherwise specified Parameter Symbol Values Unit min. |typ. |max. DC Characteristics Collector-emitter breakdown voltage Vipryceo Vv Io = 100 PA, fg = 0 50 - : Coilector-base breakdown voltage VipR)CBO Io = 10 pA, Ip =0 50 - - Base-emitter breakdown voltage VipR)EBO le = 10 PA, ig = 0 5 - - Collector cutoff current IcBo nA Vop = 40 V, ic = 0 : - 100 DC current gain hee - Ilo=5 mA, Vog=5V 120 - 630 Collector-emitter saturation voltage 1) VeeEsat Vv Ig = 10 mA, Ig =0.5 mA - - 0.3 Input off voltage Vicott) Ig = 100 PA, Voge =5V 0.4 - 0.8 Input on Voltage Vicon) lo=2 MA, Veg = 0.3 V 0.5 - 1.1 Input resistor Ay 3.2 4.7 6.2 kQ AC Characteristics Transition frequency fy MHz fo =10 MA, Veg = 5 V, f= 100 MHz - 150 - Collector-base capacitance Cob pF Vcp = 10 V, f= 1 MHz - 3 - 1) Pulse test: t < 300s; D < 2% Semiconductor Group 604 12.96SIEMENS BR 119 DC Current Gain fgg = f (Ic) Collector-Emitter Saturation Voltage Vor = 5V (common emitter configuration) Voesat = Klc), Ape = 20 102 * Neg - 10-1 10 40 10 mA 00 0.1 0.2 0.3 v 05 we i - Mesa input on Voltage Vion) = Mic) Input off voltage Vi(of) = Mic) Voge = 0.3V (common emitter configuration) Voge = 5V (common emitter configuration) Vion) Semiconductor Group 605SIEMENS BCR 119 Total power dissipation P,; = f (Ta*; Ts) * Package mounted on epoxy mw t . Lal 0 0 2 40 60 80 100 120 C 150 1,7, Permissible Pulse Load Ainss = tp) Permissible Pulse Load Piotmax / Ptotoc = Abb) 103 101 TS bit hes Tena Semiconductor Group 606 12.96