DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BAS16VY High-speed switching diode array Product specification 2003 Apr 08 Philips Semiconductors Product specification High-speed switching diode array BAS16VY FEATURES PINNING * Small plastic SMD package PIN DESCRIPTION * High switching speed 1 anode (a1) * Three electrically isolated diodes 2 anode (a2) * Low capacitance. 3 anode (a3) 4 cathode (k3) APPLICATIONS 5 cathode (k2) * General purpose switching in surface mounted circuits. 6 cathode (k1) DESCRIPTION 6 handbook, halfpage 5 4 1 2 3 The BAS16VY consists of three electrically isolated high-speed switching diodes, encapsulated in a small SOT363 (SC-88) SMD plastic package. 6 5 4 1 2 3 MDB061 Top view Marking code: 16p. Fig.1 Simplified outline (SOT363; SC-88) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VRRM repetitive peak reverse voltage - 85 V VR continuous reverse voltage - 75 V IF continuous forward current - 200 mA IFRM repetitive peak forward current - 450 mA IFSM non-repetitive peak forward current t = 1 s - 4.5 A t = 1 ms - 1 A t=1s - 0.5 A - 250 mW square wave; Tj = 25 C prior to surge; see Fig.4 Ts = 85 C; note 1 Ptot total power dissipation Tstg storage temperature -65 +150 C Tj junction temperature -65 +150 C Note 1. Solder points at pins: 2, 3, 5 and 6. 2003 Apr 08 2 Philips Semiconductors Product specification High-speed switching diode array BAS16VY ELECTRICAL CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT Per diode VF IR forward voltage see Fig.3 reverse current IF = 1 mA 715 mV IF = 10 mA 855 mV IF = 50 mA 1 V IF = 150 mA 1.25 V VR = 25 V 30 nA VR = 75 V 1 A VR = 25 V; Tj = 150 C 30 A VR = 75 V; Tj = 150 C 50 A see Fig.5 Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 1.5 pF trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 4 ns Vfr forward recovery voltage when switched from IF = 10 mA; tr = 20 ns; see Fig.8 1.75 V THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point Note 1. Solder points at pins: 2, 3, 5 and 6. 2003 Apr 08 3 note 1 VALUE 260 UNIT K/W Philips Semiconductors Product specification High-speed switching diode array BAS16VY GRAPHICAL DATA MGW102 250 MBG382 300 handbook, halfpage handbook, halfpage I Fmax IF (mA) (mA) 200 (1) (2) (3) 200 150 100 100 50 0 0 0 50 100 Ts (C) 150 0 1 2 VF (V) (1) Tj = 150 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values. Fig.2 Maximum permissible continuous forward current as a function of soldering point temperature. Fig.3 Forward current as a function of forward voltage. MGW103 10 handbook, full pagewidth I FSM (A) 1 10 -1 1 10 102 103 t p (s) Based on square wave currents. Tj = 25 C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 2003 Apr 08 4 104 Philips Semiconductors Product specification High-speed switching diode array BAS16VY MGA884 105 Cd (pF) IR (nA) 10 V R = 75 V 4 max 103 10 MBG446 0.8 handbook, halfpage 0.6 75 V 0.4 25 V 2 0.2 typ typ 10 0 0 100 T j ( o C) 0 200 4 8 12 VR (V) 16 f = 1 MHz; Tj = 25 C. Fig.5 Reverse current as a function of junction temperature. 2003 Apr 08 Fig.6 5 Diode capacitance as a function of reverse voltage; typical values. Philips Semiconductors Product specification High-speed switching diode array BAS16VY handbook, full pagewidth tr tp t D.U.T. 10% IF RS = 50 IF SAMPLING OSCILLOSCOPE t rr t R i = 50 V = VR I F x R S (1) 90% VR MGA881 input signal output signal (1) IR = 1 mA. Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor = 0.05. Oscilloscope: rise time tr = 0.35 ns Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 k 450 V I 90% R S = 50 D.U.T. OSCILLOSCOPE V fr R i = 50 10% MGA882 t tr input signal Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp 100 ns; duty factor 0.005. Fig.8 Forward recovery voltage test circuit and waveforms. 2003 Apr 08 6 t tp output signal Philips Semiconductors Product specification High-speed switching diode array BAS16VY PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 v M A 4 5 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 2003 Apr 08 REFERENCES IEC JEDEC EIAJ SC-88 7 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification High-speed switching diode array BAS16VY DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Apr 08 8 Philips Semiconductors Product specification High-speed switching diode array BAS16VY NOTES 2003 Apr 08 9 Philips Semiconductors Product specification High-speed switching diode array BAS16VY NOTES 2003 Apr 08 10 Philips Semiconductors Product specification High-speed switching diode array BAS16VY NOTES 2003 Apr 08 11 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA75 (c) Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp12 Date of release: 2003 Apr 08 Document order number: 9397 750 10909