DATA SH EET
Product specification 2003 Apr 08
DISCRETE SEMICONDUCTORS
BAS16VY
High-speed switching diode array
b
ook, halfpage
MBD128
2003 Apr 08 2
Philips Semiconductors Product specification
High-speed switching diode array BAS16VY
FEATURES
•Small plastic SMD package
•High switching speed
•Three electrically isolated diodes
•Low capacitance.
APPLICATIONS
•General purpose switching in surface mounted circuits.
DESCRIPTION
The BAS16VY consists of three electrically isolated
high-speed switching diodes, encapsulated in a small
SOT363 (SC-88) SMD plastic package.
PINNING
PIN DESCRIPTION
1 anode (a1)
2 anode (a2)
3 anode (a3)
4 cathode (k3)
5 cathode (k2)
6 cathode (k1)
handbook, halfpage
654
123
MDB061
123
654
Top view
Fig.1 Simplified outline (SOT363; SC-88) and
symbol.
Marking code: 16p.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Solder points at pins: 2, 3, 5 and 6.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VRRM repetitive peak reverse voltage −85 V
VRcontinuous reverse voltage −75 V
IFcontinuous forward current −200 mA
IFRM repetitive peak forward current −450 mA
IFSM non-repetitive peak forward
current square wave; Tj=25°C prior to surge;
see Fig.4
t=1µs−4.5 A
t=1ms −1A
t=1s −0.5 A
Ptot total power dissipation Ts=85°C; note 1 −250 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −65 +150 °C
2003 Apr 08 3
Philips Semiconductors Product specification
High-speed switching diode array BAS16VY
ELECTRICAL CHARACTERISTICS
Tamb =25°C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Solder points at pins: 2, 3, 5 and 6.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode
VFforward voltage see Fig.3
IF= 1 mA 715 mV
IF= 10 mA 855 mV
IF=50mA 1 V
I
F= 150 mA 1.25 V
IRreverse current see Fig.5
VR= 25 V 30 nA
VR=75V 1 µA
V
R= 25 V; Tj= 150 °C30µA
V
R
= 75 V; Tj= 150 °C50µA
C
d
diode capacitance f = 1 MHz; VR= 0; see Fig.6 1.5 pF
trr reverse recovery time when switched from IF= 10 mA to IR= 10 mA;
RL= 100 Ω; measured at IR= 1 mA; see Fig.7 4ns
V
fr forward recovery voltage when switched from IF= 10 mA; tr=20ns;
see Fig.8 1.75 V
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to soldering point note 1 ≤260 K/W
2003 Apr 08 4
Philips Semiconductors Product specification
High-speed switching diode array BAS16VY
GRAPHICAL DATA
handbook, halfpage
0 50 100 Ts (°C) 150
250
150
200
50
0
100
MGW102
IFmax
(mA)
Fig.2 Maximum permissible continuous forward
current as a function of soldering point
temperature.
(1) Tj= 150 °C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.
Fig.3 Forward current as a function of forward
voltage.
handbook, halfpage
02
300
IF
(mA)
0
100
200
MBG382
1VF (V)
(1) (3)(2)
handbook, full pagewidth
MGW103
10
1
10−111010
2103tp (µs) 104
IFSM
(A)
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
Tj=25°C prior to surge.
2003 Apr 08 5
Philips Semiconductors Product specification
High-speed switching diode array BAS16VY
Fig.5 Reverse current as a function of junction
temperature.
105
104
10 200
0
MGA884
100 T ( C)
jo
IR
(nA)
103
102
75 V
25 V
typ
max
V = 75 V
R
typ
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj=25°C.
handbook, halfpage
0816124
0.8
0.6
0
0.4
0.2
MBG446
VR (V)
Cd
(pF)
2003 Apr 08 6
Philips Semiconductors Product specification
High-speed switching diode array BAS16VY
handbook, full pagewidth
trr
(1)
IFt
output signal
trt
tp
10%
90%
VR
input signal
V = V I x R
RF S
R = 50
SΩIF
D.U.T.
R = 50
iΩ
SAMPLING
OSCILLOSCOPE
MGA881
Fig.7 Reverse recovery voltage test circuit and waveforms.
(1) IR= 1 mA.
Input signal: reverse pulse rise time tr= 0.6 ns; reverse voltage pulse duration tp= 100 ns; duty factor δ= 0.05.
Oscilloscope: rise time tr= 0.35 ns
trt
tp
10%
90%
I
input
signal
R = 50
SΩ
I
R = 50
iΩ
OSCILLOSCOPE
Ω1 k Ω450
D.U.T.
MGA882
Vfr
t
output
signal
V
Fig.8 Forward recovery voltage test circuit and waveforms.
Input signal: forward pulse rise time tr= 20 ns; forward current pulse duration tp≥100 ns; duty factor δ≤0.005.
2003 Apr 08 7
Philips Semiconductors Product specification
High-speed switching diode array BAS16VY
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT363 SC-88
wBM
b
p
D
e
1
e
pin 1
index A
A1
Lp
Q
detail X
HE
E
vMA
AB
y
0 1 2 mm
scale
c
X
132
4
56
Plastic surface mounted package; 6 leads SOT363
UNIT A1
max bpcDEe
1H
E
L
p
Qywv
mm 0.1 0.30
0.20 2.2
1.8
0.25
0.10 1.35
1.15 0.65
e
1.3 2.2
2.0 0.2 0.10.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15 0.25
0.15
A
1.1
0.8
97-02-28
2003 Apr 08 8
Philips Semiconductors Product specification
High-speed switching diode array BAS16VY
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL DATA SHEET
STATUS(1) PRODUCT
STATUS(2)(3) DEFINITION
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratany otherconditionsabove thosegivenin the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationor warrantythatsuchapplicationswill be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusing orsellingthese products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
2003 Apr 08 9
Philips Semiconductors Product specification
High-speed switching diode array BAS16VY
NOTES
2003 Apr 08 10
Philips Semiconductors Product specification
High-speed switching diode array BAS16VY
NOTES
2003 Apr 08 11
Philips Semiconductors Product specification
High-speed switching diode array BAS16VY
NOTES
© Koninklijke Philips Electronics N.V. 2003 SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a world wide company
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands 613514/01/pp12 Date of release: 2003 Apr 08 Document order number: 9397 750 10909
